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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/9646
標題: | 堆疊晶片間無線能量傳送系統 Wireless power transmission system between stacked dies |
作者: | Jun-An Ji 紀俊安 |
指導教授: | 盧信嘉 |
關鍵字: | 三維積體電路,耦合電感,能量傳輸,覆晶技術,整流器, 3D-IC,coupled inductor,power transmission,flip-chip,rectifier, |
出版年 : | 2011 |
學位: | 碩士 |
摘要: | 本篇論文提出一個使用了耦合電感於三維積體電路堆疊晶片間無線能量傳輸的一個可行方法。現行無線能量傳輸方法主要有三,耦合電容、耦合電感以及天線。但其中偶合電容與天線在晶片尺寸時的功率傳輸大約只在微瓦(μW)等級,而我們希望能得到毫瓦(mW)等級的傳輸功率,來驅動系統級的電路。除此之外,與電容耦合相比,由於電感耦合的傳輸有比較遠的距離,因此選用耦合電感做為傳輸媒介。本論文提出兩個不同傳輸距離的設計,晶片間的距離分別為15以及70微米。我們使用交流弦波做為發射訊號,經由發射端電感來傳送能量,接收端則包含了接收電感以及整流器來穩定並提供輸出電壓。此無線能量傳輸系統發射端分別使用氧化鋁陶瓷基板(Al2O3)製程以及玻璃基體被動元件(GIPD)製程,而接收端方面則使用台灣積體電路公司0.18微米製程來實現。本論文實作之結果,在Al2O3版本模擬結果為輸出功率38.10mW,轉換效率為25.93%。在GIPD版本量測結果為輸出功率3.28mW,轉換效率10.36%。 A wireless power transmission for stacked dies in 3D-IC is implemented by using coupled inductor design. There are three common methods for wirelessly power transfer: inductive coupling, capacitive coupling and antenna radiation. We hope the wireless power transmission system can offer more than mW power. Unfortunately, only inductive coupling can provide over mW power transmission. Besides, inductive coupling interconnect has longer transmission distance as compared with capacitive interconnect and antenna. This is why we choose inductive coupling. In this thesis, we implement two systems in different transmission distances. The transmission distance is 15μm and 70μm respectively. A sine-wave signal generator is adopted as a source for power transmission. On the other side, there is a receiving inductor and a rectifier at the receiver. The proposed receiver of wireless power transmission system is implemented in TSMC 0.18μm CMOS process and the transmitter of wireless power transmission system is implemented in Al2O3 process and GIPD process respectively for demonstration of this architecture. The simulated received power and efficiency for transmitting inductor using Al2O3 process are 38.10mW and 25.93% respectively. The measured received power and efficiency for transmitting inductor using GIPD process are 3.28mW and 10.36% respectively. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/9646 |
全文授權: | 同意授權(全球公開) |
顯示於系所單位: | 電子工程學研究所 |
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ntu-100-1.pdf | 2.48 MB | Adobe PDF | 檢視/開啟 |
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