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Showing results 1 to 17 of 17

Publication Year	Title	Author(s)	Department
2025	n型矽金氧半元件於光照下之電流特性研究 Study on the Current Characteristics of MOS(n) Devices under Illumination	黃冠霖; Guan-Lin Huang	電子工程學研究所
2024	中心局部氧化層薄化同心圓環閘金氧半穿隧二極體之暫態電流強化行為及其記憶體應用 Enhanced Transient Current Behavior and Its Memory Application in Concentric Gate Metal-Insulator-Semiconductor Tunnel Diodes with Center Oxide Local Thinning	王瑞賢; Rui-Xian Wang	元件材料與異質整合學位學程
2022	具超厚薄氧化層之鋁/二氧化矽/p型矽金氧半穿隧結構研究 Study on Al/SiO2/Si(p) Metal-Oxide-Semiconductor Tunnel Structures with Ultra-High-Low Oxides	林冠文; Kuan-Wun Lin	電子工程學研究所
2024	具高介電常數氧化鋁與氧化矽堆疊結構金氧半元件多位階電荷儲存及暫態記憶特性之研究 Study of Multiple Charge-Storage States and Transient Memory Behaviors in MIS(p) with High-k Al2O3/SiO2 Stacking Structure	羅雅云; Ya-Yun Lo	電子工程學研究所
2023	同心圓金氧半穿隧二極體耦合效應在光傳感中的應用 Applications of Concentric MIS(p) Tunnel Diode Coupling Effect on Photo Sensing	林郁芹; Yu-Cin Lin	電子工程學研究所
2025	基於光與偏壓控制耦合之同心環狀金氧半穿隧二極體結構的邏輯閘設計 Logic Gates Based on Light and Bias Controlled Coupling in Concentric Ring Metal-Insulator-Semiconductor Tunnel Diode Structures	王文彥; Wen-Yen Wang	元件材料與異質整合學位學程
2023	多階態開路電壓和短路電流感測金氧半耦合元件及誘導式軟性崩潰操作技術 Multi-State Open-Circuit Voltage and Short-Circuit Current Sensing in MIS Coupling Devices and Induced Soft Breakdown Operation Technology	陳舜啓; Shun-Chi Chen	電子工程學研究所
2023	氧化層電荷對金氧半穿隧二極體在反轉區之電流及電容特性之影響 Impact of Oxide Charges on the Current and Capacitance Characteristics of Metal-Insulator-Semiconductor Tunneling Diode in Inversion Region	陳冠竹; Kuan-Chu Chen	電子工程學研究所
2024	氧化層電荷對金氧半穿隧二極體暫態電流行為及光感應特性的影響 Effect of The Oxide Charge on The Transient Current Behavior and Photo Sensing Characteristic of MIS(p) Tunnel Diode	林俊億; Jun-Yi Lin	電子工程學研究所
2023	氧化鋁鈍化層對金屬絕緣層半導體穿隧二極體的影響與其在感光應用之研究 Effect of Al2O3 Passivation (AOP) on the Characteristics of Metal-Insulator-Semiconductor (MIS) Tunnel Diodes and Its Application on Light Sensing	林彥瑜; Yen-Yu Lin	電子工程學研究所
2025	碳化矽金氧半結構之二氧化矽氧化方法暨介面與記憶行為特性研究 SiO2 Oxidation Methodology and Characteristics of Interface and Memory Behaviors in Al/Al2O3/SiO2/SiC(n) MOS Structure	藍柏皓; Po-Hao Lan	電子工程學研究所
2024	碳化矽金氧半結構氧化層製程開發及元件應用之研究 Oxidation Process Development and Device Applications in 4H-SiC MIS Structure	廖威騏; Wei-Chi Liao	電子工程學研究所
2024	鄰近同心金氧半穿隧二極體之電流耦合效應及邏輯閘應用 Current Coupling Effect in Adjacent Concentric Metal-Insulator-Semiconductor Tunnel Diodes and Its Application of Logic Gates	龔泰銘; Tai-Ming Kung	電子工程學研究所
2023	金屬-絕緣層-半導體穿隧二極體內部與外部耦合效應之研究 Investigation on Inner and Outer Charge Coupling Phenomena in Metal-Insulator-Semiconductor Tunneling Diodes	沈祐德; Yu-Te Shen	電子工程學研究所
2025	金氧半元件氧化矽捕陷效應對記憶行為之影響 Effect of Trapping in Silicon Oxide on The Memory Behavior of MOS(p) Devices	陳羿融; Yi-Jung Chen	電子工程學研究所
2024	金氧半穿隧二極體之暫態電流行為 Transient Current Behavior in MIS Tunnel Diodes	黃崧瑋; Sung-Wei Huang	電子工程學研究所
2023	閘極外圍氧化層移除之金氧半穿隧二極體之強化暫態電流行為及側向電流研究 Enhanced Transient Current Behavior and Lateral Current Investigation of MIS(p) Tunnel Diode by Oxide Removal at the Gate Edge Diodes	林軒毅; Hsuan-Yi Lin	電子工程學研究所

Showing results 1 to 17 of 17