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標題: | 金屬-絕緣層-半導體穿隧二極體內部與外部耦合效應之研究 Investigation on Inner and Outer Charge Coupling Phenomena in Metal-Insulator-Semiconductor Tunneling Diodes |
作者: | 沈祐德 Yu-Te Shen |
指導教授: | 胡振國 Jenn-Gwo Hwu |
關鍵字: | 金氧半穿隧二極體,邏輯元件,記憶體,側向不均勻性,耦合效應, MIS TDs,coupling phenomenon,lateral non-uniformity,memory,logic device, |
出版年 : | 2023 |
學位: | 碩士 |
摘要: | 本論文探討了金屬-絕緣層-半導體穿隧二極體元件內部與外部的耦合效應。在第二章中,我們設計出一個側向氧化層厚度不均勻的金屬-氧化層-半導體穿隧二極體元件。我們發現當元件從順偏壓切換到接地時,短路電流並非隨著時間單調遞減,而是會在一段時間後出現一個極大值。透過反覆的實驗與SILVACO TCAD 軟體的模擬,我們提出了一種由氧化層不均勻的結構所導致的載子傳輸與複合機制。由於這種機制發生在元件內部,因此我們將其命名為內部耦合效應。在第三章中,我們改良了前人所研究過的鄰近同心金屬-絕緣層-半導體穿隧二極體。透過實驗數據,我們證明了改良後的邏輯元件,不僅面積縮減了99%以上,更具備承載更多輸入端且低功耗的特性。由於這是由多個電極組合所產生的效應,因此我們將其命名為外部耦合效應。最後,我們針對內部耦合效應提出了可能的記憶體應用,也針對如何進一步改良元件設計使得外部耦合效應更理想給出了具體的建議。 In this dissertation, the inner and outer charge coupling phenomena in metalinsulation-semiconductor (MIS) tunneling diodes (TDs) are investigated. In Chapter 2, we design a metal-oxide-semiconductor tunneling diode with a non-uniform oxide thickness in the lateral direction. We found that the short-circuit current does not decrease monotonically with time when the device is switched from forward-bias to ground. Instead, a peak occurs after a period of time. Through experimental results and simulations with SILVACO TCAD, we propose a carrier transport and recombination relaxation mechanism caused by the lateral non-uniform structure of the oxide layer. Since this mechanism occurs inside the device, we named it as inner coupling phenomenon. In Chapter 3, we modify the previously studied adjacent concentric metalinsulator-semiconductor tunneling diodes. By the experimental results, we demonstrate that the modified logic device not only has a reduced area of more than 99%, but also is capable of carrying more inputs while maintains low power consumption. Since this is an effect results from the combination of multiple electrodes, we named it as outer coupling phenomenon. Finally, we propose a possible memory application utilizing the inner coupling effect, and give specific suggestions on how to design the device structure to make outer coupling effect even more preferable. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/88195 |
DOI: | 10.6342/NTU202301035 |
全文授權: | 同意授權(限校園內公開) |
顯示於系所單位: | 電子工程學研究所 |
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