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Title: | 利用熱載子效應形成單晶單層二硫化鉬憶阻器電晶體 Single crystalline monolayer MoS2 memtransistors enabled by hot carriers |
Authors: | 楊舒婷 Shu-Ting Yang |
Advisor: | 吳肇欣 Chao-Hsin Wu |
Keyword: | 憶阻器電晶體,接觸電阻,電阻式開關,多功能元件,半金屬, memtransistor,contact resistance,resistive switching,multifunctional device,high carrier mobility, |
Publication Year : | 2023 |
Degree: | 碩士 |
Abstract: | 二維材料元件擁有超越矽電子元件的潛在優勢,然而在金屬與半導體界面通常會產生金屬誘發的能隙態,導致較高的接觸電阻。因此,本研究利用已開發出的半金屬鉍 (Bi) 作為接觸電極,以提高二硫化鉬 (MoS2) 場效應電晶體 (FET) 的性能表現。透過半金屬接觸電極的結合,以及針對材料表面的 N-甲基-2-吡咯烷酮 (NMP) 清潔技術,我們成功實現了製作單層 MoS2 FET,並實現了歐姆接觸,在室溫下,我們的元件顯示出約 95 Ω µm 的低接觸電阻和七個數量級的電流開關比。
經確認良好的接觸電極品質後,我們便能夠避免憶阻器設計受到電極接觸電阻的干擾。接著,我們成功開發了一種使用高 k 值氧化層的MoS2憶阻器電晶體元件,此元件具有閘極可調性和憶阻器開關特性。MoS2憶阻器電晶體可透過兩種輸入的脈衝電壓(汲極或閘極)來調控電流特性,並且展現四個數量級的開關電阻狀態。僅需小於 ±3V 的汲極或閘極脈衝電壓,即可實現程式寫入和擦除操作。這是因為在氧化層和漏電極界面處,短通道效應的熱載子被捕獲造成氧化層陷阱態密度變化,而閘極引起的電荷注入氧化層則導致了這種效應。 最後,本研究利用單層單晶二硫化鉬的材料,將憶阻器和電晶體功能集成到單一個元件中,這在應用上包括神經形態學習和持續縮小的摩爾定律的超越,提供了一種全新的方式。這種新型元件的成功開發,為未來的科技發展帶來了潛力。 Two-dimensional (2D) material-based nanodevices are of technological interests for beyond-silicon electronics. However, energy barriers at the metal-semiconductor interface, i.e., metal-induced gap states (MIGS), result in high contact resistance. A semi-metallic bismuth electrode has been created to enhance the performance of MoS2 field effect transistors (FETs). Herein, we present superior performance monolayer MoS2 FET with Ohmic contact through bismuth contact electrode and N-methyl-2-pyrrolidone (NMP) wet cleaning which can provide an intrinsic surface. By doing so, a low contact resistance of ~95 Ω µm is realized at room temperature. Furthermore, following this approach, we also realize a memory transistor using a high-k dielectric which shows gate tunability and memristive switching. The MoS2 memtransistors demonstrate individual resistance states by four orders of magnitude, and low gate voltage pulses below ±3V is enough to achieve 20 different states which would occur through the hot carriers injection trapped at the dielectric and drain electrode interface. Overall, this study aims to integrate memristor and transistor functionalities into a single device, which is desirable to diverse applications including neuromorphic learning and continued downscaling beyond Moore’s law. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/91565 |
DOI: | 10.6342/NTU202303464 |
Fulltext Rights: | 同意授權(限校園內公開) |
Appears in Collections: | 光電工程學研究所 |
Files in This Item:
File | Size | Format | |
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ntu-111-2.pdf Restricted Access | 3.32 MB | Adobe PDF | View/Open |
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