適用於系統以及電路模擬的異質介面雙載子發光電晶體模型

Abstract

本篇論文測量並比較了不同偏置情況下異質結雙極發光電晶體（也稱為 LET 和 HBLET）的光調製帶寬。基於量子井的異質結雙極發光晶體管由於其具有多端口操作能力，因此能夠作為光通信和光電集成電路（OEIC）中的候選器件。元件的調製帶寬受到載子複合以及載子捕獲-逃逸動態的限制，為了提高帶寬，有必要了解捕獲和逃逸的知識。 我們提供穩態方法作為動態方法（例如時間分辨光致發光和小信號響應）的替代，以描述發光電晶體的兩種壽命。 這種方法使我們能夠確定兩個生命週期的特徵。 作為實驗工作的一部分，我們通過直流測量探索 基極-發射極結的電氣特性。 為了開發電荷控制模型，我們使用連續性方程來描述量子井的未束縛和束縛子帶中的電子濃度。 相關的捕獲和逃逸壽命可以通過使用解析方程結合發光電晶體的當前增益來計算。 我們通過將觀察到的帶寬與研究中發現的 -3 dB 增益帶寬進行比較來驗證我們的模型。 從器件物理開始，我們構建了發光電晶體模型，用於光電集成電路和電氣設計自動化的仿真和使用。除了對器件功能很重要的發光電晶體基本特性之外，我們的模型還準確描述了 發光電晶體的電到電和電到光特性。 還提供導納矩陣，用於調製響應的通用模擬，包括共發射極、共集電極和共基極設置中的散射參數和電流增益。 為了確保電路模擬器SPICE兼容，還給出了發光電晶體的大信號眼圖。 在我們的模型的幫助下，可以加快電路設計的過程，這也可以幫助電路設計者分析自己電路的有效性。 本篇論文並模擬比較發光電晶體在熱感應器，光收發器的效能。另外也運用TCAD模擬元件内部電流以及載子複合的分佈，以及不同尺寸下的元件跟電路特性。希望本篇論文的分析可以用在改善類似元件以及電路架構的效能。

In the thesis, the optical modulation bandwidths of light-emitting transistors (LETs) under various bias conditions are measured and contrasted in order to determine the effect of the voltage-dependent charge-removing mechanism within the active region. Due to their multiport operation properties, quantum-well-based heterojunction bipolar light-emitting transistors (HBLETs or LETs) could function as candidate devices in optical communication and optoelectronic integrated circuits (OEICs). Recombination and capture-escape dynamics of carriers limit the modulation bandwidth of a device. To enhance bandwidths, knowledge of capture and escape lifetimes is required. To characterize the two lifetimes of light-emitting transistors, we present a steady-state method as opposed to dynamic techniques such as time-resolved photoluminescence and small-signal response. On the experimental side, we investigate the electrical characteristics of the base-emitter junction of LETs via DC measurements. We formulate the charge-controlled model with continuity equations for electron concentrations in the quantum well's unbound and bound subbands. Using analytical expressions and the current gains of LETs, the related capture and escape lifetimes are extracted. In conclusion, we validate our model by comparing the measured bandwidths to the study's -3 dB gain bandwidths.

We construct the model of light-emitting transistors (LETs) for simulation and application in optoelectronic integrated circuits and electronic design automation, beginning with the device physics. Our model accurately describes the electrical-to-electrical and electrical-to-optical properties of LETs, as well as the fundamental properties of LETs pertinent to device operation. For general simulations of modulation responses such as scattering parameters and current gains in common-emitter, common-collector, and common-base configurations, an admittance matrix is also presented. For SPICE compatibility, the large-signal eye diagrams of LETs on the circuit simulator are also demonstrated. Our model can assist circuit designers in evaluating the efficacy of their circuits and accelerating the design process. We also simulate and compare the performance of light-emitting transistors in thermal sensors and optical transceivers. In addition, TCAD is also used to simulate the distribution of internal current and carrier recombination of components, as well as the characteristics of components and circuits at different sizes. It is hoped that the analysis in this paper can be used to improve the performance of similar components and circuit architectures.