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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 吳肇欣 | zh_TW |
| dc.contributor.advisor | Chao-Hsin Wu | en |
| dc.contributor.author | 楊順 | zh_TW |
| dc.contributor.author | Lucas Yang | en |
| dc.date.accessioned | 2023-10-03T16:55:09Z | - |
| dc.date.available | 2023-11-09 | - |
| dc.date.copyright | 2023-10-03 | - |
| dc.date.issued | 2023 | - |
| dc.date.submitted | 2023-08-08 | - |
| dc.identifier.citation | [1] J. Bardeen, and W. H. Brattain, “The Transistor, A Semi-Conductor Triode,” Phys. Rev. 74, pp.230-231, 1948.
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Li, “Double-level spiral inductors with multiple-via interconnects on GaAs substrates,” IEEE Transactions on Magnetics, vol. 40, no. 3, pp. 1756–1758, May 2004, doi: 10.1109/TMAG.2004.826912. [105] H.-H. Chen, C.-W. Wang, and C.-H. Wu, “Monolithically Integrated Optical NAND Gate Using Light-Emitting Transistors,” in 2018 23rd Opto-Electronics and Communications Conference (OECC), Jul. 2018, pp. 1–2. doi: 10.1109/OECC.2018.8729956. [106] Y.-T. Chen, Y.-T. Liang, and C.-H. Wu, “Monolithically Integrated Optoelectronic Multiplexer Circuit Using Light Emitting Transistors,” in 26th Optoelectronics and Communications Conference (2021), paper T3E.2, Optica Publishing Group, Jul. 2021, p. T3E.2. doi: 10.1364/OECC.2021.T3E.2. | - |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/90626 | - |
| dc.description.abstract | 本篇論文測量並比較了不同偏置情況下異質結雙極發光電晶體（也稱為 LET 和 HBLET）的光調製帶寬。基於量子井的異質結雙極發光晶體管由於其具有多端口操作能力，因此能夠作為光通信和光電集成電路（OEIC）中的候選器件。元件的調製帶寬受到載子複合以及載子捕獲-逃逸動態的限制，為了提高帶寬，有必要了解捕獲和逃逸的知識。 我們提供穩態方法作為動態方法（例如時間分辨光致發光和小信號響應）的替代，以描述發光電晶體的兩種壽命。 這種方法使我們能夠確定兩個生命週期的特徵。 作為實驗工作的一部分，我們通過直流測量探索 基極-發射極結的電氣特性。 為了開發電荷控制模型，我們使用連續性方程來描述量子井的未束縛和束縛子帶中的電子濃度。 相關的捕獲和逃逸壽命可以通過使用解析方程結合發光電晶體的當前增益來計算。 我們通過將觀察到的帶寬與研究中發現的 -3 dB 增益帶寬進行比較來驗證我們的模型。
從器件物理開始，我們構建了發光電晶體模型，用於光電集成電路和電氣設計自動化的仿真和使用。除了對器件功能很重要的發光電晶體基本特性之外，我們的模型還準確描述了 發光電晶體的電到電和電到光特性。 還提供導納矩陣，用於調製響應的通用模擬，包括共發射極、共集電極和共基極設置中的散射參數和電流增益。 為了確保電路模擬器SPICE兼容，還給出了發光電晶體的大信號眼圖。 在我們的模型的幫助下，可以加快電路設計的過程，這也可以幫助電路設計者分析自己電路的有效性。 本篇論文並模擬比較發光電晶體在熱感應器，光收發器的效能。另外也運用TCAD模擬元件内部電流以及載子複合的分佈，以及不同尺寸下的元件跟電路特性。希望本篇論文的分析可以用在改善類似元件以及電路架構的效能。 | zh_TW |
| dc.description.abstract | In the thesis, the optical modulation bandwidths of light-emitting transistors (LETs) under various bias conditions are measured and contrasted in order to determine the effect of the voltage-dependent charge-removing mechanism within the active region. Due to their multiport operation properties, quantum-well-based heterojunction bipolar light-emitting transistors (HBLETs or LETs) could function as candidate devices in optical communication and optoelectronic integrated circuits (OEICs). Recombination and capture-escape dynamics of carriers limit the modulation bandwidth of a device. To enhance bandwidths, knowledge of capture and escape lifetimes is required. To characterize the two lifetimes of light-emitting transistors, we present a steady-state method as opposed to dynamic techniques such as time-resolved photoluminescence and small-signal response. On the experimental side, we investigate the electrical characteristics of the base-emitter junction of LETs via DC measurements. We formulate the charge-controlled model with continuity equations for electron concentrations in the quantum well's unbound and bound subbands. Using analytical expressions and the current gains of LETs, the related capture and escape lifetimes are extracted. In conclusion, we validate our model by comparing the measured bandwidths to the study's -3 dB gain bandwidths.
We construct the model of light-emitting transistors (LETs) for simulation and application in optoelectronic integrated circuits and electronic design automation, beginning with the device physics. Our model accurately describes the electrical-to-electrical and electrical-to-optical properties of LETs, as well as the fundamental properties of LETs pertinent to device operation. For general simulations of modulation responses such as scattering parameters and current gains in common-emitter, common-collector, and common-base configurations, an admittance matrix is also presented. For SPICE compatibility, the large-signal eye diagrams of LETs on the circuit simulator are also demonstrated. Our model can assist circuit designers in evaluating the efficacy of their circuits and accelerating the design process. We also simulate and compare the performance of light-emitting transistors in thermal sensors and optical transceivers. In addition, TCAD is also used to simulate the distribution of internal current and carrier recombination of components, as well as the characteristics of components and circuits at different sizes. It is hoped that the analysis in this paper can be used to improve the performance of similar components and circuit architectures. | en |
| dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2023-10-03T16:55:09Z No. of bitstreams: 0 | en |
| dc.description.provenance | Made available in DSpace on 2023-10-03T16:55:09Z (GMT). No. of bitstreams: 0 | en |
| dc.description.tableofcontents | Acknowledgments I
摘要 III Abstract V Table of Contents VII List of Figures XIII List of Tables XXVII Chapter 1. Introduction 1 1.1. History of Bipolar Transistors and Background of Light-Emitting Transistors 1 1.2. Current Modeling Research Status in Light-Emitting Transistors and Transistor Lasers 4 1.3. Modeling Need of Light-Emitting Transistors 16 1.4. Organization of work 18 Chapter 2. Characteristics of Bipolar Devices 21 2.1 Preface 21 2.2 Characteristics of Homojunction Bipolar Transistors 21 2.2.1 Minority Carrier Concentration Profile in a sub-region 22 2.2.2 Nodal Current Expressions of Homojunction Bipolar Transistors 24 2.2.3 Current Gains Properties in Different Configurations 25 2.2.4 Current Gains Properties in Different B-C voltage operations 26 2.3 Characteristics of Heterojunction Bipolar Junction Transistors 28 2.3.1 Current Gains Properties with Different Heterojunction Designs 30 2.3.2 Current Gains Properties in Different Temperatures 31 2.3.3 Current Gains Properties with Different Regional Doping Concentrations 34 2.4 Characteristics of Heterojunction Bipolar Light Emitting Transistors 37 2.4.1 Comparison between HBTs and LETs 40 2.4.2 B-C Junction Controllability on LETs under Forward Active Operation 43 2.4.3 Forward Gummel and Reverse Gummel Operations of LETs 46 2.4.4 QW Light-Emitting Efficiency versus Temperature 48 2.4.5 Fanz-Kyldesh Effect on LETs [50] 49 Chapter 3. Charge-Controlled Analysis and 2DEG Capture-Escape Properties in InGaAs/GaAs Light-Emitting Transistors 55 3.1. Preface 55 3.2. Derivation of Nodal Currents 58 3.3. Experiment 64 3.4. Extraction Procedure 67 3.4.1. Recombination Lifetime 68 3.4.2. Ratio between Electron Concentrations in Bound and Unbound Subbands of QW 70 3.4.3. Quasi-Fermi Levels of Unbound and Bound Subbands 72 3.4.4. Capture and Escape Lifetimes 77 3.5. Discussion on Capture-Escape Dynamics with Inter-subband Transition Perspective 82 Chapter 4. Microwave Modeling of Light-Emitting Transistors 89 4.1. Preface 90 4.2. Configuration Transformation and Analysis 91 4.2.1. Transfer to common emitter configurations with S matrix [85] 92 4.2.2. Transfer to common emitter current gain with S matrix 94 4.3. Small Signal Model Extraction 94 4.3.1. External Parameters Extraction 95 4.3.2. Extraction Intrinsic Parameters 105 4.4. Electrical Microwave model 116 4.5. Electrical-to-Optical Modulation Branch 121 4.6. Four-Port Microwave model 127 Chapter 5. Discussion on Circuit and System Applications 139 5.1. Preface 139 5.2. Temperature Sensor 141 5.3. Photoreceiver and Phototranceiver 155 5.4. Signal Integrity 162 Chapter 6. Physical Simulations of HBTs and LETs 165 6.1. Preface 165 6.2. Device Structure and Layout 166 6.3. Characteristics of Recombination in the Base Region 167 6.4. Peripheral Recombination 170 6.5. QW Epitaxial Layer Comparison 172 6.5.1. QW mole fraction 172 6.5.2. QW width 173 6.6. Contact Width Scaling 175 6.6.1. Scaling Emitter Contact Width 176 6.6.2. Scaling Base Contact Width 177 6.6.3. Scaling Collector Contact Width 178 6.7. Mesa Area Scaling 180 6.7.1. Scaling Emitter Mesa Radius 181 6.7.2. Scaling Base Mesa Radius 183 6.8. Scaling Discussion on Circuit Application 185 Chapter 7. Conclusion 187 7.1. Summary 187 7.2. Suggestions for Future Work 190 References 192 APPENDIX A 213 Reverse Saturation Current Densities JE,t,fs and JE,t,rs 213 APPENDIX B 213 Elements of Admittance Matrix 213 APPENDIX C 214 Inter-subband Optical Phonon Scattering 214 APPENDIX D 216 The temperature properties of junction depletion capacitance and junction conductance 216 APPENDIX E 217 Bandgap energy change of strained quantum well 217 APPENDIX F 220 Publication List 220 APPENDIX G 222 學位論文原創性檢查 222 | - |
| dc.language.iso | en | - |
| dc.title | 適用於系統以及電路模擬的異質介面雙載子發光電晶體模型 | zh_TW |
| dc.title | A Heterojunction Bipolar Light-Emitting Transistor Model for Circuit and System Application | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 111-2 | - |
| dc.description.degree | 博士 | - |
| dc.contributor.oralexamcommittee | 張書維;吳育任;黃建璋;辛裕明 | zh_TW |
| dc.contributor.oralexamcommittee | Shu-Wei Chang;Yuh-Renn Wu;JianJang Huang ;Yue-ming Hsin | en |
| dc.subject.keyword | 發光電電體,電路模擬,光電集成電路,光通訊,載子逃逸-捕捉動力學,基極主動區設計,TCAD, | zh_TW |
| dc.subject.keyword | Light-emitting transistors,SPICE,OEIC,optical communication,capture-escape dynamics,base active region design,TCAD, | en |
| dc.relation.page | 250 | - |
| dc.identifier.doi | 10.6342/NTU202303065 | - |
| dc.rights.note | 同意授權(限校園內公開) | - |
| dc.date.accepted | 2023-08-09 | - |
| dc.contributor.author-college | 電機資訊學院 | - |
| dc.contributor.author-dept | 光電工程學研究所 | - |
| 顯示於系所單位： | 光電工程學研究所 | |
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