透過螢光共振能量轉移實現 高亮度混合磷化銦量子點發光二極體

Abstract

近年來，由於環保、無毒的特性，磷化銦量子點的發展及應用逐漸受到矚目。本論文中，我們探討了534 nm、607 nm磷化銦量子點之間的螢光共振能量轉移特性，使得量子點發光強度和載子生命週期有所提升。此外，我們成功地利用溶劑製程製造出以混合磷化銦量子點為主動發光層的發光二極體，其最大電流效率可達28.9 cd A-1，而外部電子效率可達10.6%，相比於其他相似結構但没有混和量子點發光層的已發表報告，效率大約可提升至兩倍。我們設計的磷化銦量子點發光二極體元件具有簡單易製作的結構，提出的機制和製程方法很也很容易複製並應用在其他材料，使其在光電技術的開發中具有極高的實用性和潛力。

In recent years, there has been a growing interest in the development and application of indium phosphide (InP) quantum dots (QDs) due to their eco-friendly and non-toxic characteristics. We investigated the Förster resonance energy transfer (FRET) between 534 nm and 607 nm InP QDs to enhance the emission and carrier lifetime from 607 nm InP QDs. We further fabricated mixed InP quantum dot light-emitting diodes (QD-LEDs) using a solution-processed fabrication method. FRET was employed in the InP light emitting layer by utilizing a mixture of 607 nm and 534 nm QDs to enhance the emission efficiency. The best-performing mixed InP QD-LED device achieved a maximum current efficiency of 28.9 cd A-1 and an external quantum efficiency (EQE) of 10.6%, which is about two times better than those achieved by the pure QD device and other published reports with similar structures without QD mixture. The mechanisms presented here can be further replicated and applied in many other material systems, and the simple and easily-fabricated layer structure of the QD-LED devices makes them highly practical and promising for the development of efficient optoelectronic technology.