先進原子層技術以及區域選擇性原子層沉積之研究

Abstract

本論文主要分為兩部分，首先第一部份為區域選擇性原子層沉積(area-selective atomic layer deposition, AS-ALD)，透過自組裝分子膜(self-assembly monolayer, SAM)選擇性接附在基板，能使其表面性質由親水變成疏水，並抑制ALD前驅物與表面反應。藉由水接觸角的分析，得知需要在適當的環境、時間下浸泡基板才能有披覆較完整的自組裝單分子膜，並且開發浸泡完SAM溶液後的清潔製程，避免基板上有SAM殘留，並達成一定程度的選擇比。第二部分利用電漿增強型原子層沉積(plasma-enhanced atomic layer deposition)技術，沉積氮化鈦薄膜提出改善薄膜內殘碳的方法，並利用X射線光電子能譜(X-ray photoelectron spectroscopy)、原子力顯微鏡(atomic force microscope)、穿透式電子顯微鏡(transmission electron microscope)與Hall效應等技術進行檢測，因而成功降低氮化鈦薄膜的電阻率。

This thesis is divided into two parts. The first part is about area-selective atomic layer deposition (ALD) via the self-assembled monolayer (SAM) passivation. By utilizing the intrinsically selective absorption of SAM, SAM is capable of selectively chemically adsorbing on different substrate surfaces. Through contact angle measurement, the coverage of SAM can be characterizated. Substrate dipped into the SAM solution under suitable environment control is essential to achieve good coverage of SAM. In addition, the cleaning step is critical to remove the SAM. Good area-selective ALD has been achieved. The second part of this thesis investigates the impact of plasma-enhanced atomic layer deposition (PE-ALD) on the resistivity of TiN thin films, which were characterized by the atomic force microscope, transmission electron microscope, and Hall effect measurements. The X-ray photoelectron spectroscop analysis indicates that the carbon content in the TiN thin films can be reduced by the PE-ALD process, leading to significant reduction in the resistivity of TiN thin films.