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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 陳敏璋 | zh_TW |
| dc.contributor.advisor | Miin-Jang Chen | en |
| dc.contributor.author | 楊孟謙 | zh_TW |
| dc.contributor.author | Meng-Chien Yang | en |
| dc.date.accessioned | 2021-07-10T21:53:54Z | - |
| dc.date.available | 2024-08-19 | - |
| dc.date.copyright | 2019-08-26 | - |
| dc.date.issued | 2019 | - |
| dc.date.submitted | 2002-01-01 | - |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/77278 | - |
| dc.description.abstract | 本論文主要分為兩部分，首先第一部份為區域選擇性原子層沉積(area-selective atomic layer deposition, AS-ALD)，透過自組裝分子膜(self-assembly monolayer, SAM)選擇性接附在基板，能使其表面性質由親水變成疏水，並抑制ALD前驅物與表面反應。藉由水接觸角的分析，得知需要在適當的環境、時間下浸泡基板才能有披覆較完整的自組裝單分子膜，並且開發浸泡完SAM溶液後的清潔製程，避免基板上有SAM殘留，並達成一定程度的選擇比。第二部分利用電漿增強型原子層沉積(plasma-enhanced atomic layer deposition)技術，沉積氮化鈦薄膜提出改善薄膜內殘碳的方法，並利用X射線光電子能譜(X-ray photoelectron spectroscopy)、原子力顯微鏡(atomic force microscope)、穿透式電子顯微鏡(transmission electron microscope)與Hall效應等技術進行檢測，因而成功降低氮化鈦薄膜的電阻率。 | zh_TW |
| dc.description.abstract | This thesis is divided into two parts. The first part is about area-selective atomic layer deposition (ALD) via the self-assembled monolayer (SAM) passivation. By utilizing the intrinsically selective absorption of SAM, SAM is capable of selectively chemically adsorbing on different substrate surfaces. Through contact angle measurement, the coverage of SAM can be characterizated. Substrate dipped into the SAM solution under suitable environment control is essential to achieve good coverage of SAM. In addition, the cleaning step is critical to remove the SAM. Good area-selective ALD has been achieved. The second part of this thesis investigates the impact of plasma-enhanced atomic layer deposition (PE-ALD) on the resistivity of TiN thin films, which were characterized by the atomic force microscope, transmission electron microscope, and Hall effect measurements. The X-ray photoelectron spectroscop analysis indicates that the carbon content in the TiN thin films can be reduced by the PE-ALD process, leading to significant reduction in the resistivity of TiN thin films. | en |
| dc.description.provenance | Made available in DSpace on 2021-07-10T21:53:54Z (GMT). No. of bitstreams: 1 ntu-108-R06527044-1.pdf: 4631034 bytes, checksum: 1466f343cb2d3795afac667a296044a7 (MD5) Previous issue date: 2019 | en |
| dc.description.tableofcontents | 致謝 I
摘要 II Abstract III 目錄 IV 圖目錄 VI 表目錄 X 第一章 簡介 1 1.1 研究動機 1 1.2 原子層沉積技術(ALD) 3 1.2.1 原子層沉積技術 3 1.2.2 電漿增強原子層沉積技術 6 1.3 自組裝單分子膜(self-assembled monolayers, SAMs) 10 1.4 量測儀器簡介 11 1.4.1 X光光電子能譜儀(X-ray Photoemission Spectroscopy, XPS) 11 1.4.2 橢圓偏光儀(Spectroscopic Ellipsometer, SE) 11 1.4.3 低掠角X光繞射(Grazing Incidence X-Ray Diffraction, GIXRD) 14 1.4.4 X光反射率分析(X-ray reflectometry, XRR) 15 1.5 論文導覽 18 第二章 以自組裝單分子膜為基礎的區域選擇性原子層沉積(AS-ALD) 19 2.1 簡介與文獻回顧 19 2.2 實驗步驟 23 2.2.1 自組裝單分子與ALD前驅物介紹 25 2.3 實驗結果與討論 28 2.3.1 建立標準SAMs製程 28 2.3.2 觀察SAMs製程參數調整對ALD選擇性的影響 33 2.3.3 觀察調整ALD製程參數調整對選擇性的影響 37 2.3.4 觀察退火及電漿對SAMs的移除能力 39 2.3.5 Multi-cycles SAMs製程對於選擇性的影響 50 2.3.6 觀察甲苯放置時間對矽基板浸泡ODTS溶液後氧化的影響 61 2.4 結論 62 第三章 以原子層轟擊技術改良氮化鈦薄膜性質 64 3.1 簡介與文獻回顧 64 3.2 實驗步驟 68 3.2.1 ALD前驅物介紹 70 3.3 實驗結果與討論 70 3.3.1 比較不同標準TiN製程 70 3.3.2 比較電漿轟擊加入不同標準TiN製程的影響 72 3.3.3 比較不同功率的電漿轟擊加入N2/H2 TiN標準製程的影響 75 3.3.4 比較Ar電漿轟擊後延遲時間對TiN薄膜電阻率的影響 78 3.3.5 比較Ar電漿轟擊時間對TiN薄膜電阻率的影響 79 3.4 結論 86 第四章 總結 87 參考文獻 88 | - |
| dc.language.iso | zh_TW | - |
| dc.subject | 區域選擇性沉積 | zh_TW |
| dc.subject | 原子層沉積技術 | zh_TW |
| dc.subject | 自組裝單分子膜 | zh_TW |
| dc.subject | 氮化鈦 | zh_TW |
| dc.subject | self-assembled monolayer (SAM) | en |
| dc.subject | area-selective atomic layer deposition(AS-ALD) | en |
| dc.subject | atomic layer deposition(ALD) | en |
| dc.subject | TiN | en |
| dc.title | 先進原子層技術以及區域選擇性原子層沉積之研究 | zh_TW |
| dc.title | Advanced Atomic Layer Technology and Area-Selective Atomic Layer Deposition | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 107-2 | - |
| dc.description.degree | 碩士 | - |
| dc.contributor.oralexamcommittee | 李峻霣;吳肇欣;陳則安;陳佑昇 | zh_TW |
| dc.contributor.oralexamcommittee | Jiun-Yun Li;Chaoh-Sin Wu;Tse-An Chen;Yu-Sheng Chen | en |
| dc.subject.keyword | 原子層沉積技術,自組裝單分子膜,區域選擇性沉積,氮化鈦, | zh_TW |
| dc.subject.keyword | atomic layer deposition(ALD),self-assembled monolayer (SAM),area-selective atomic layer deposition(AS-ALD),TiN, | en |
| dc.relation.page | 93 | - |
| dc.identifier.doi | 10.6342/NTU201903155 | - |
| dc.rights.note | 未授權 | - |
| dc.date.accepted | 2019-08-12 | - |
| dc.contributor.author-college | 工學院 | - |
| dc.contributor.author-dept | 材料科學與工程學系 | - |
| 顯示於系所單位： | 材料科學與工程學系 | |
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