以APPJ製作GZO薄膜之大氣電漿特性與薄膜品質探討

Abstract

本研究是運用直流脈衝電源產生的常壓脈衝電弧噴射式電漿(atmospheric pressure pulsed arc plasma jet，以下簡稱 APPJ)，來運作GZO薄膜(氧化鋅摻雜鎵)沉積製程。此系統是在大氣環境下進行鍍膜，省去昂貴的真空系統費用，透過小面積漸進式的掃描方式可在大面積基板上鍍膜。其中藉著控制電源供應器電壓、直流電源脈衝、氣流量、噴嘴溫度、噴嘴長度、噴塗間距等，來探討其對薄膜品質和大氣電漿狀態的影響關係，進而增進製程品質。 從調整電源脈衝中發現，脈衝頻率對電漿狀態與薄膜品質有較大的影響，本研究中當脈衝頻率於25kHz附近時可獲得較低的薄膜片電阻，而在調整脈衝休止時間(T-off)時，對電漿與薄膜片電阻影響較脈衝開啟時間(T-on)大。在電壓調整中觀察到，隨著電源供應器電壓的上升，會導致二次側崩潰電壓下降與瞬間電流的提高且會使電漿變得更劇烈，但其對於薄膜的影響並不高。在電漿頭溫度的改變上，隨著電漿噴嘴溫度越高，薄膜片電阻有降低的趨勢，而在調整氣流方面則會有一個片電阻最低極限值，與其主載氣體的流量搭配有關。在噴塗間距的關係上，間距越低薄膜片電阻越低；而下部噴嘴長度，因為大氣quench的影響，下部噴嘴較長者可讓激發態氮氣分子維持距離較長，而可鍍出擁有較低片電阻的薄膜。

In this study, we use APPJ generated by a DC pulse source to deposite GZO thin film in the atmosphere presurre environment without vacuum chamber. It will be discussed the effects of several key process parameters, including the power supply voltage, DC pulse, gas flow rate, nozzle temperature, the length of the nozzle, spray gap, to understand their relationship with the film quality and atmospheric plasma state. By adjusting DC Pulse, the pulse frequency is found that have a greater impact on the plasma state and the film quality. When the pulse frequency is near 25kHz , lower sheet resistance can be gotten. Besides, we found when we adjust T-off time, the plasma and thin film quality will be influenced more than T-on time. By changing the power supply voltage, the secondary-side voltage decreases with increase of the instantaneous current and the plasma will become more intense. On the plasma nozzle temperature, the plasma nozzle with higher temperature have lower film sheet resistance. The flow rate’s effect have the lowest sheet resistance due to collocation of main gas rate and carry gas rate. By adjusting gap, the lower sheet resistance will show with lower gap; On nozzle length, long nozzle can get film with lower sheet resistance due to the effect of atmospheric quench.