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標題: | 寬頻差相式相移器設計 Design of Broadband Differential Phase shifters |
作者: | Po-Sheng Huang 黃柏盛 |
指導教授: | 盧信嘉 |
關鍵字: | 高通元件,帶通元件,差相式相移器,超寬頻帶,90°功率分離器, high-pass network,bandpass network,differential phase shifter,ultra-wideband,quadrature power splitter (QPS)., |
出版年 : | 2015 |
學位: | 博士 |
摘要: | 在本論文中首先探討傳統差相式相移器之特性及使用高通元件作為差相式相移器之侷限。因此進而提出兩種改良型差相式相移器之寬頻化架構,此兩種架構分別藉由SMD元件實現於印刷電路板上以及使用低溫共燒陶瓷製程上。
本論文首先分析使用高通型元件做為寬頻差相式相移器之特性,並且於低溫共燒陶瓷實現寬頻90°功率分離器,可操作於2.9 GHz至7.2 GHz頻寬為85 %,相位誤差為 ± 5°。同時將高通行元件透過低溫共燒陶瓷製程設計成表面黏著單元,可於印刷電路板上實現任意角度之差相式相移器,可操作於2.5 GHz至8 GHz,相對頻寬為104%。 第一種寬頻化差相式相移器架構是橋式T型帶通元件,透過一個橋式電容跨接於T型帶通元件之輸出與輸入兩端,可同時調整相位特性並且維持阻抗匹配特性,使用此橋式T型帶通元件實現寬頻差相式相移器,理論頻寬可增加至130%以上,透過SMD電容及電感元件於印刷電路板上實現90°、45°、22.5°寬頻差相式相移器可操作於0.55 GHz 至 2.51 GHz,相位誤差分別為 ± 5.5°、± 2.5°、± 1.5°,頻寬為125%、127 %、129%。 第二種寬頻化差相式相移器是改良式高通元件,於高通元件中加入耦合傳輸線,可同時達到調整相位並且維持阻抗匹配之特性,並於低溫共燒陶瓷製程上設計超寬頻帶90°功率分離器,透過MIM電容之寄生元件達成耦合傳輸線之效果,可有效縮小尺寸,此90°功率分離器操作於3.1 GHz 至 11.2 GHz 頻寬為112%。此超寬頻帶90°功率分離器可應用於平衡式放大器內之90度耦合器,由0.18微米互補式金氧半導體製程所製作功率放大器並透過覆晶連接技術片黏著於低溫共燒陶瓷基板上,實現一個3 GHz 至10.6 GHz 超寬頻平衡式功率放大器。 最後總結所實現之寬頻差相式相移器之特性與比較,使用者可透過比較表及根據所需要的相位誤差、阻抗匹配以及頻寬之需求,選擇適合實現之寬頻差相式相移器架構,透過論文可得到起始設計值。 In this dissertation, the design and tradeoff of conventional phase shifters are discussed at first, and the bandwidth is accordingly limited by the topology of using high-pass network for differential phase shifter. This dissertation then aims to explore novel topologies for broadband and high performance differential phase shifters. Two topologies are proposed to extend the bandwidth of the phase shifters which are realized on printed circuit board (PCB) by surface mounted device (SMD) inductors and capacitors and realized in low temperature co-fired ceramic (LTCC), respectively. The broadband phase shifter using the high-pass network is analyzed and applied to the quadrature power splitter in LTCC. This QPS operates from 2.9 GHz to 7.2 GHz with the fractional bandwidth (FBW) of 87% and phase error of ± 5°. Then, the arbitrary phase shifters are developed using the high-pass networks which are realized in SMD cells using LTCC process. These phase shifters are implemented on PCB by using SMD cells, and they operate from 2.5 GHz to 8 GHz with FBW of 104%. The first topology to extend the bandwidth is the bridged T-type bandpass network. By shunting a capacitor between input and output ports of the conventional T-type bandpass network, the phase delay of the bridged T-type bandpass network can be adjusted without deteriorating the return loss. The theoretical FBW of phase shifters using the bridged T-type bandpass networks can be increase to more than 130%. 22.5°, 45° and 90° phase shifters operating from 0.55 GHz to 2.51 GHz are demonstrated on PCB by SMD inductors and capacitors. Their phase errors are ± 1.5°, ± 2.5°, ± 5.5° and their FBW are 129%, 127 % and 125%, respectively. The second topology to extend the bandwidth is the modified high-pass network by adding the coupled line in the T-type high-pass network which can be utilized to adjust the phase delay while maintaining good impedance matching. The ultra-wideband (UWB) QPS is implemented by using the modified high-pass network in LTCC. The size of QPS is compact because the coupled line in the high-pass network is constructed by the parasitic components of metal-insulator-metal (MIM) capacitors. This QPS operates from 3.1 GHz to 11.2 GHz with FBW of 112%, and furthermore it can be applied to the couplers of the balanced amplifier. A UWB balanced power amplifier using CMOS 0.18μm and flip chip technology with proposed QPS is presented which operates from 3 GHz to 12 GHz. As a conclusion, a table summarize the phase shifters performance for designers’ reference. Designer can select proper topology based on the requirement for the return loss and phase shift. Then, the initial values can be obtained by given the operating frequency. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/55152 |
全文授權: | 有償授權 |
顯示於系所單位: | 電子工程學研究所 |
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