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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/51758
Title: | 磁性單電子電晶體中自旋堆積所引發的磁電容之探測 Probing Spin Accumulation induced Magnetocapacitance in a Single Electron Transistor |
Authors: | Teik-Hui Lee 呂德輝 |
Advisor: | 陳啟東(Chii-Dong Chen) |
Keyword: | 磁電容,自旋堆積,磁性單電子電晶體, magnetocapacitance,spin accumulation,spin flip,spin diffusion length,single electron transistor,Coulomb diamond, |
Publication Year : | 2015 |
Degree: | 博士 |
Abstract: | We show that non-equilibrium spin accumulation can induce tunnel magnetocapacitance through the formation of a tiny charge dipole. This dipole can effectively give rise to an additional serial capacitance, which represents an extra charging energy that the tunneling electrons would encounter. In the sequential tunneling regime, this extra energy can be understood as the energy required for a single spin to flip. A ferromagnetic single-electron-transistor with tunable magnetic configuration is utilized to demonstrate the proposed mechanism. It is found that the extra threshold energy is experienced only by electrons entering the islands, bringing about asymmetry in the measured Coulomb diamond. This asymmetry is an unambiguous evidence of spin accumulation induced tunnel magnetocapacitance, and the measured magnetocapacitance value is as high as 40%. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/51758 |
Fulltext Rights: | 有償授權 |
Appears in Collections: | 物理學系 |
Files in This Item:
File | Size | Format | |
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ntu-104-1.pdf Restricted Access | 27.95 MB | Adobe PDF |
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