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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 陳啟東(Chii-Dong Chen) | |
dc.contributor.author | Teik-Hui Lee | en |
dc.contributor.author | 呂德輝 | zh_TW |
dc.date.accessioned | 2021-06-15T13:48:14Z | - |
dc.date.available | 2025-12-24 | |
dc.date.copyright | 2015-12-01 | |
dc.date.issued | 2015 | |
dc.date.submitted | 2015-11-09 | |
dc.identifier.citation | Chapter 1
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Boundary Resistance of the Ferromagnetic-Nonferromagnetic Metal Interface. Physical Review Letters 58, 2271(1–3) (1987). 8. Meservey, R. & Tedrow, P. M. Spin-polarized electron tunneling. Physics Reports 238, 173–243 (1994). 9. Valet, T. & Fert, A. Theory of the perpendicular magnetoresistance in magnetic multilayers. Physical Review B 48, 7099(1–15) (1993). Appendix (I) 1. Kaiju, H., Fujita, S., Morozumi, T. & Shiiki, K. Magnetocapacitance effect of spin tunneling junctions. Journal of Applied Physics 91, 7430 (2002). 2. Chang, Y.-M. et al. Extraction of the tunnel magnetocapacitance with two-terminal measurements. Journal of Applied Physics 107, 093904 (2010). | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/51758 | - |
dc.description.abstract | We show that non-equilibrium spin accumulation can induce tunnel magnetocapacitance through the formation of a tiny charge dipole. This dipole can effectively give rise to an additional serial capacitance, which represents an extra charging energy that the tunneling electrons would encounter. In the sequential tunneling regime, this extra energy can be understood as the energy required for a single spin to flip. A ferromagnetic single-electron-transistor with tunable magnetic configuration is utilized to demonstrate the proposed mechanism. It is found that the extra threshold energy is experienced only by electrons entering the islands, bringing about asymmetry in the measured Coulomb diamond. This asymmetry is an unambiguous evidence of spin accumulation induced tunnel magnetocapacitance, and the measured magnetocapacitance value is as high as 40%. | en |
dc.description.provenance | Made available in DSpace on 2021-06-15T13:48:14Z (GMT). No. of bitstreams: 1 ntu-104-D95222039-1.pdf: 28622984 bytes, checksum: b7cfc029d0e5ac85676cb28c32971214 (MD5) Previous issue date: 2015 | en |
dc.description.tableofcontents | Referees’ Approval Endorsement i
Acknowledgement ii Abstract iii List of Publications iv Table of Contents v List of Figures viii List of Tables xv 1. Introduction & Motivation 1.1 Magnetocapacitance 1 1.2 Tunnel Magnetocapacitance (TMC) 4 1.3 AC Measurement of Capacitance 6 1.4 DC Measurement of Capacitance 8 1.5 Introduction to Single Electronics 9 1.5.1 Basics of Single Charge Transfer 9 References 11 2. Background 2.1 Single Electron Tunneling (SET) 14 2.1.1 Early Theory and Experiments 14 2.1.2 Condition for Coulomb Blockade 15 2.1.3 The Orthodox Theory 17 2.2 Spin Dependent Transport 20 2.2.1 Two-Current Model 21 2.2.2 Discovery of Giant Magnetoresistance (GMR) 22 2.2.3 Rise of Magnetic Tunnel Junctions (MTJs) 24 2.2.4 Spin Dependent Tunneling 25 Electron tunneling 25 Spin Polarized Tunneling 27 Magnetic Tunnel Junctions 28 Julliere’s Model 30 2.2.5 Spin Accumulation 31 2.2.6 Spin Capacitance in Spintronic SET 33 2.3 Capacitance due to Screening Effect 35 2.3.1 General Definition of Capacitance 36 Parallel Plate Model of Capacitance 37 2.3.2 Screening Effects of Metallic Interface 38 2.3.3 Screening Mechanisms 41 Screening in General 41 Thomas-Fermi Screening 44 References 47 3. Experiments & Results 3.1 Double FM/NM/FM Structure 52 3.2 SET with TMR signature 55 3.2.1 TMR signature with the absence of SET 55 3.2.2 TMR signature with the presence of SET 56 3.3 Sub-Kelvin Measurements 59 Measuring Asymmetric Coulomb Diamonds 59 References 63 4. Discussions 4.1 Spin Dependent Drift-Diffusion Model 65 4.2 Spin Dependent Diffusion Lengths 69 4.3 Formation of Tiny Charge Dipole 70 4.4 Single Spin Flip 72 4.5 Manipulation of ΔTMC values 75 References 77 Conclusion Remarks 78 Appendix I 79 Appendix II 80 Paper (I) Paper (II) | |
dc.language.iso | en | |
dc.title | 磁性單電子電晶體中自旋堆積所引發的磁電容之探測 | zh_TW |
dc.title | Probing Spin Accumulation induced Magnetocapacitance in a Single Electron Transistor | en |
dc.type | Thesis | |
dc.date.schoolyear | 104-1 | |
dc.description.degree | 博士 | |
dc.contributor.coadvisor | 張嘉升(Chia-Seng Chang) | |
dc.contributor.oralexamcommittee | 林敏聰(Minn-Tsong Lin),張慶瑞(Ching-Ray Chang),許仁華(Jen-Hwa Hsu),郭華丞(Watson Kuo) | |
dc.subject.keyword | 磁電容,自旋堆積,磁性單電子電晶體, | zh_TW |
dc.subject.keyword | magnetocapacitance,spin accumulation,spin flip,spin diffusion length,single electron transistor,Coulomb diamond, | en |
dc.relation.page | 81 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2015-11-11 | |
dc.contributor.author-college | 理學院 | zh_TW |
dc.contributor.author-dept | 物理研究所 | zh_TW |
顯示於系所單位: | 物理學系 |
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