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Title: | 利用原子級厚度二氧化鈦金屬氧化物作為鈣鈦礦電池之電子傳輸層 Atomically thin metal oxide Titania as electron transporting layer for Perovskite Solar Cells |
Authors: | CHUNG-WEI LIN 林忠緯 |
Advisor: | 陳俊維(CHUN-WEI CHEN) |
Keyword: | 鈣鈦礦太陽能電池,CH3NH3PbIxCl3-x,原子級厚度薄膜,低溫製成,穩定性, Perovskite solar cells,CH3NH3PbIxCl3-x,atomically thin layer,low temper process,stability, |
Publication Year : | 2016 |
Degree: | 碩士 |
Abstract: | 在近期幾年內,興起了利用有機-無機鈣鈦礦材料來當作太陽能電池中的光吸收層的研究,在這短短的幾年時間內,鈣鈦礦太陽能電池轉換效率已經可以到達21%。而大部分的固態鈣鈦礦太陽能電池使用一種需要高溫燒結製成的金屬氧化物材料,緻密二氧化鈦Compact TiO2,來當作電子傳輸層,然而這個高溫製成將會限制一些鈣鈦礦太陽能電池在某些領域的應用,如應用在可繞式基板上、或者是結合其他材料做成串聯式太陽能電池。在我們的研究中,我們利用了一種低溫合成的金屬氧化物,原子層級厚度二氧化鈦Atomic Ti0.87O2,來當作我們的電子傳輸層。藉由Langmuir-Blodgett 沉積方法,我們可以在全低溫製程(小於150 度)下將原子層級厚度二氧化鈦非常服貼且覆蓋率相當好地沉積在基板上面,製作鈣鈦礦太陽能電池。利用約五奈米厚度地原子層級厚度二氧化鈦,即可大幅地降低載子再結合和漏電流的機率,使效率可以達到14.05%,其元件表現效率可略高於使用高溫燒結的緻密二氧化鈦元件。更重要的是,我們發現利用原子層級二氧化鈦其元件表現穩定性比緻密二氧化鈦來的好許多,在二十天過後,原子層級二氧化鈦其元件表現效率還能達到原始的70%,而利用緻密二氧化鈦的元件只能表現其原本的10%效率。在這個研究中我們可以藉由原子層級二氧化鈦,去製作一個全低溫溶液製成,原子
層級厚度電子傳輸層,穩定性佳的鈣鈦礦太陽能電池。 A recently emerging class of solid-state hybrid organic–inorganic perovskite-based solar cells,using CH3NH3PbX3(X=Cl,Br,I) as light harvesting materials, had demonstrated remarkably high power conversion efficiencies of nearly 21%. Most state-of-the-art perovskite solar cells typically have a device structure that is based on a hightemperature sintered metal oxide(compact TiO2) as electron transporting layer(ETL) which may cause the limitation of perovskite solar cells to be deposited on flexible substrates and affect their compatibility with fabrication processes in multi-junction solar cells. In this work, the utilization of atomically thin titania (atomic Ti0.87O2) deposited at room temperature as an ultra-thin electron transporting layer in perovskite solar cell was demonstrated.Through Langmuir-Blodgett deposition process at room temperature,atomic Ti0.87O2 was conformally deposited on FTO substrate with a high coverage and eliminated the requirement of high temperature process (over 500C) to deposit compact TiO2. The incorporation of multi-layer Ti0.87O2 (around 5 nm) effectively decreased the recombination of electron and hole and leaded to a reduced leakage current. This resulted in a promising device performance (14.05%) that is compatible to the device fabricated using high-temperature sintered metal oxide as electron selection layer. More importantly, we find devices using atomic Ti0.87O2 as electron transporting layer have a better stability in atomsphere. After 30 days, the atomic Ti0.87O2 devices remain about 70% of their original efficiency, unlike compact TiO2 devices, which remain 10% of original efficiency. With the atomic Ti0.87O2 electron transporting layer, we can successfully make a whole low temperature solution process, an atomically thin film ETL, and a stable deivces. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/48848 |
DOI: | 10.6342/NTU201603616 |
Fulltext Rights: | 有償授權 |
Appears in Collections: | 材料科學與工程學系 |
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ntu-105-1.pdf Restricted Access | 5.95 MB | Adobe PDF |
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