利用原子層沉積技術成長表面鈍化層於矽晶太陽能電池之應用

Abstract

由於近年來地球暖化的情況不斷惡化，所以發展再生能源變成是一個重要的課題，其中太陽能電池是其中一個引人注目的焦點。隨著材料技術的發展，太陽能電池逐漸多樣化，但是目前太陽能電池還是以矽晶太陽能電池為大宗。在矽晶太陽能電池中，有不少提升效率的關鍵技術，例如效能良好的表面保護層(surface passivation layer)、背面表面電場（back surface field）、抗反射層(anti-reflection coating)以及好的電極結構。本論文將從太陽能電池的基本原理開始，進一步討論使用原子層沉積技術(Atomic layer deposition)成長不同的薄膜，利用Photoluminescence和microwave photoconductivity decay(μ-PCD)量測技術研究其表面鈍化的效果，並利用電容電壓量測系統來比較不同薄膜有無退火處理的電性，再探討利用原子層沉積技術成長氧化層作為表面鈍化層以及抗反射層於不同結構太陽能電池之應用。從實驗結果得知利用原子層沉積技術所成長的氧化層具有良好的表面鈍化效果，可有效提升矽晶太陽能電池的效率。

Recently, energy crisis and the awareness of environmental protection have gained much attention. Therefore, green-energy related technologies were developed rapidly; solar cell is one of the prominent renewable energy sources. In many kinds of solar cells, most fabricated solar cells are made of crystalline silicon (c-Si) wafers..In order to enhance the efficiency of c-Si solar cells, many structures in the solar cell, such as a surface passivation layer on the emitter of solar cells, back surface field (BSF), anti-reflection coating, and low resistance metal contact, had been used. In this thesis, the fundamental physics of solar cells are discussed first. The effect of surface passivation layers grown by atomic layer deposition (ALD) is also studied.. Photoluminescence and microwave photoconductivity decay (μ-PCD) measurements are conducted to investigate the effect of surface passivation layers. We also utilized capacitance vs. voltage measurement to characterize the surface passivation layers with/without the post-annealing treatment. Finally, we applied these films to the fabrication of Si solar cells. The efficiency of c-Si solar cells were effectively enhanced by the surface passivation layers grown by the ALD tecnnique.