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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 陳敏璋(Miin-Jang Chen) | |
| dc.contributor.author | Che-Wei Chang | en |
| dc.contributor.author | 張哲瑋 | zh_TW |
| dc.date.accessioned | 2021-06-15T05:55:42Z | - |
| dc.date.available | 2015-08-20 | |
| dc.date.copyright | 2010-08-20 | |
| dc.date.issued | 2010 | |
| dc.date.submitted | 2010-08-17 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/47341 | - |
| dc.description.abstract | 由於近年來地球暖化的情況不斷惡化，所以發展再生能源變成是一個重要的課題，其中太陽能電池是其中一個引人注目的焦點。隨著材料技術的發展，太陽能電池逐漸多樣化，但是目前太陽能電池還是以矽晶太陽能電池為大宗。在矽晶太陽能電池中，有不少提升效率的關鍵技術，例如效能良好的表面保護層(surface passivation layer)、背面表面電場（back surface field）、抗反射層(anti-reflection coating)以及好的電極結構。本論文將從太陽能電池的基本原理開始，進一步討論使用原子層沉積技術(Atomic layer deposition)成長不同的薄膜，利用Photoluminescence和microwave photoconductivity decay(μ-PCD)量測技術研究其表面鈍化的效果，並利用電容電壓量測系統來比較不同薄膜有無退火處理的電性，再探討利用原子層沉積技術成長氧化層作為表面鈍化層以及抗反射層於不同結構太陽能電池之應用。從實驗結果得知利用原子層沉積技術所成長的氧化層具有良好的表面鈍化效果，可有效提升矽晶太陽能電池的效率。 | zh_TW |
| dc.description.abstract | Recently, energy crisis and the awareness of environmental protection have gained much attention. Therefore, green-energy related technologies were developed rapidly; solar cell is one of the prominent renewable energy sources. In many kinds of solar cells, most fabricated solar cells are made of crystalline silicon (c-Si) wafers..In order to enhance the efficiency of c-Si solar cells, many structures in the solar cell, such as a surface passivation layer on the emitter of solar cells, back surface field (BSF), anti-reflection coating, and low resistance metal contact, had been used. In this thesis, the fundamental physics of solar cells are discussed first. The effect of surface passivation layers grown by atomic layer deposition (ALD) is also studied.. Photoluminescence and microwave photoconductivity decay (μ-PCD) measurements are conducted to investigate the effect of surface passivation layers. We also utilized capacitance vs. voltage measurement to characterize the surface passivation layers with/without the post-annealing treatment. Finally, we applied these films to the fabrication of Si solar cells. The efficiency of c-Si solar cells were effectively enhanced by the surface passivation layers grown by the ALD tecnnique. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-15T05:55:42Z (GMT). No. of bitstreams: 1 ntu-99-R97527058-1.pdf: 3073547 bytes, checksum: ec0ac84d1ee0d29ad133d33ecfd5cd20 (MD5) Previous issue date: 2010 | en |
| dc.description.tableofcontents | Abstract i
摘要 ii Contents iii Figure contents viii Table contents xiv Chapter 1 1 Introduction 1 1-1 Motivation 1 1-2 Atomic Layer Deposition (ALD) 2 1-3 Reference 7 Chapter 2 11 Fundamentals of Solar Cells and PC1D Simulation Program 11 2-1 Introduction 11 2-2 The Ideal Solar Cells 11 2-2-1 Solar Cell Efficiency 14 2-3 Equivalent Circuits of Real Solar Cells 15 2-4 Effects of Series Resistance and Shunt Resistance on Solar Cell Efficiency 17 2-4-1 Series Resistance 17 2-4-2 Shunt Resistance 18 2-5 PC1D Solar Cell Simulation Program 20 2-5-1 Device Part of PC1D Solar Cell Simulation Program 22 2-5-2 Region Part of PC1D Solar Cell Simulation Program 23 2-5-3 Excitation Part of PC1D Solar Cell Simulation Program 28 2-6 Results of PC1D Simulation 28 2-6-1 Effect of Reflectance 28 2-6-2 Effect of Front and Rear Recombination 31 2-7 Summary 34 2-8 Reference 35 Chapter 3 37 Growth of High-Quality Thin Films as Surface Passivation Layer by ALD 37 3-1 Introduction 37 3-2 Experiment of Different Thin Films as Surface Passivation Layer 39 3-2-1 Growth of Different Thin Films on Polished Silicon 39 3-2-2 PL (Photoluminescence) Measurement 45 3-2-3 μ-PCD (microwave photoconductive decay) Measurement 48 3-2-4 Pre Oxidation and Forming Gas Annealing Treatment 52 3-2-5 Results and Discussion 53 3-3 Oxide and Interface Charges 56 3-4 MOS Structure and C-V Measurements 58 3-5 Influence of Qf and Dit on High-Frequency C-V Characteristics 67 3-5-1 Influence of Qf on High-Frequency C-V Characteristics 67 3-5-2 Influence of Dit on High-Frequency C-V Characteristics 69 3-5-3 Simulation of C-V Curves by Mathematica 72 3-6 Experiments and Results 75 3-6-1 Experiment of Al2O3, HfO2 and ZrO2 MOS Capacitors 75 3-6-2 C-V Measurement on Thermal Mode Al2O3 77 3-6-3 C-V Measurement on Plasma Mode Al2O3 78 3-6-4 C-V Measurement on Thermal Mode HfO2 79 3-6-5 C-V Measurement on Thermal Mode ZrO2 80 3-7 Summary 82 3-8 Reference 82 Chapter 4 89 Fabrication of c-Silicon and Black Silicon Solar Cell with the Surface Passivation Layers by ALD 89 4-1 Introduction 89 4-2 Comparison of the Solar Cells Fabricated by Different Process 89 4-2-1 Measurements 94 4-2-2 Results and Discussion 95 4-3 The Screen Printed Ag Paste Solar Cell Fabrication Process 96 4-4 The Optimized Solar Cell Fabrication Process 100 4-5 Black Silicon Solar Cells 102 4-5-1 Fabrication of Black Silicon 102 4-5-2 Fabrication of Black Silicon Solar Cells 106 4-6 Summary 108 4-7 Reference 109 Chapter 5 113 Conclusion 113 | |
| dc.language.iso | en | |
| dc.title | 利用原子層沉積技術成長表面鈍化層於矽晶太陽能電池之應用 | zh_TW |
| dc.title | Application of Surface Passivation Layer Grown by Atomic Layer Deposition on Silicon Solar Cells | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 98-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 鄭永楨(Yung-Chen Cheng),徐文慶(Wen-Ching Hsu),何志浩(Jr-Hau He),李敏鴻(Min-Hung Lee) | |
| dc.subject.keyword | 原子層沉積技術,太陽能電池,表面鈍化層,抗反射層, | zh_TW |
| dc.subject.keyword | Atomic layer deposition,solar cell,surface passivation layer,anti-reflection coating (ARC), | en |
| dc.relation.page | 114 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2010-08-18 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
| 顯示於系所單位： | 材料科學與工程學系 | |
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