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標題: | 銻磷砷化銦/砷化銦中紅外線光偵測器
銻磷砷化銦/砷化銦中紅外線光偵測器的製程與光電特性 Fabrication and Optoelectronic Characterization of InAsPSb/InAs Mid-infrared Photodetectors |
作者: | Shih-Wei Lo 羅世為 |
指導教授: | 林浩雄 |
關鍵字: | 光偵測器,銻磷砷化銦/砷化銦,光響應度,量子效率,偵測率, photodetectors,InAsPSb/InAs,responsivity,quantum efficiency,detectivity, |
出版年 : | 2010 |
學位: | 碩士 |
摘要: | 本論文的研究主題為銻磷砷化銦/砷化銦 (InAsPSb/InAs) 異質接面 p-i-n (p-InAsPSb/i-InAs/n-InAs)光偵測器的製程與特性研究。我們利用氣態分子束磊晶機成長i層為0.75 μm (C2759)、1.5 μm (C2758)、2 μm (C2866)三種厚度的結構,分別製作出四種不同大小的面積元件。在室溫操作下的響應度,i層厚度從0.75 μm增加為1.5 μm時,在波長3 μm附近有明顯地提升;而i層厚度為2 μm的元件,則受到晶格不匹配的影響,大幅降低光響應度值。
在我們量測的元件中,以面積500 × 500 μm2、i層厚度1.5 μm的元件具有較佳的響應度、外部量子效率及偵測率。在室溫操作下,其響應度在波長為2-3.5 μm的範圍為0.7-1.64 A/W,換算其外部量子效率為50-67 %;若將元件表面的穿透率65 %考慮進去,其內部量子效率則可接近100 %。而偵測率峰值在波長3.05 μm可達 5.4 × 109 cm-Hz1/2/W。我們計算i層厚度為1.5 μm的樣品在理想狀態下的R0A 0.77 Ω-cm2,並假設量子效率在波長3050 nm為100 %的情況下,推算其偵測率最高可達1.67 ×1010 cmHz1/2/W。 We study the fabrication and the properties of InAsPSb/InAs heterojunction p-i-n (p-InAsPSb/i-InAs/n-InAs) photodetectors. Three structures with different i layer thickness of 0.75 μm (C2759), 1.5 μm (C2758), 2 μm (C2866) were grown by gas source molecular beam epitaxy, and fabricated in devices with four different areas. The responsivity at a wavelength of 3 μm at room temperature increases obviously when the i layer thickness is increased from 0.75 μm to 1.5 μm. But the devices with 2 μm i layer thickness have much lower responsivities because of the large lattice mismatch of the InAsPSb layer. The best performance in our devices is the device with an i layer thickness of 1.5 μm and an area of 500 × 500 μm2. Responsivities at room temperature in the 0.7-1.64 A/W range were obtained in the 2-3.5 μm wavelength range, corresponding to external quantum efficiencies within 50-67 %. If the 65 % transmittance of the surface of the devices is considered, the internal quantum efficiency can be as high as 100 %. And a peak of detectivity of 5.4 × 109 cm-Hz1/2/W was obtained at the wavelength of 3.05 μm. The ideal R0A of our 1.5-um-i-layer samples is 0.77 Ω-cm2. The best detectivity is expected to be 1.67 × 1010 cmHz1/2/W at 3.05 μm with a 100 % quantum efficiency. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/47195 |
全文授權: | 有償授權 |
顯示於系所單位: | 電子工程學研究所 |
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