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DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 林浩雄 | |
dc.contributor.author | Shih-Wei Lo | en |
dc.contributor.author | 羅世為 | zh_TW |
dc.date.accessioned | 2021-06-15T05:50:27Z | - |
dc.date.available | 2010-08-20 | |
dc.date.copyright | 2010-08-20 | |
dc.date.issued | 2010 | |
dc.date.submitted | 2010-08-18 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/47195 | - |
dc.description.abstract | 本論文的研究主題為銻磷砷化銦/砷化銦 (InAsPSb/InAs) 異質接面 p-i-n (p-InAsPSb/i-InAs/n-InAs)光偵測器的製程與特性研究。我們利用氣態分子束磊晶機成長i層為0.75 μm (C2759)、1.5 μm (C2758)、2 μm (C2866)三種厚度的結構,分別製作出四種不同大小的面積元件。在室溫操作下的響應度,i層厚度從0.75 μm增加為1.5 μm時,在波長3 μm附近有明顯地提升;而i層厚度為2 μm的元件,則受到晶格不匹配的影響,大幅降低光響應度值。
在我們量測的元件中,以面積500 × 500 μm2、i層厚度1.5 μm的元件具有較佳的響應度、外部量子效率及偵測率。在室溫操作下,其響應度在波長為2-3.5 μm的範圍為0.7-1.64 A/W,換算其外部量子效率為50-67 %;若將元件表面的穿透率65 %考慮進去,其內部量子效率則可接近100 %。而偵測率峰值在波長3.05 μm可達 5.4 × 109 cm-Hz1/2/W。我們計算i層厚度為1.5 μm的樣品在理想狀態下的R0A 0.77 Ω-cm2,並假設量子效率在波長3050 nm為100 %的情況下,推算其偵測率最高可達1.67 ×1010 cmHz1/2/W。 | zh_TW |
dc.description.abstract | We study the fabrication and the properties of InAsPSb/InAs heterojunction p-i-n (p-InAsPSb/i-InAs/n-InAs) photodetectors. Three structures with different i layer thickness of 0.75 μm (C2759), 1.5 μm (C2758), 2 μm (C2866) were grown by gas source molecular beam epitaxy, and fabricated in devices with four different areas. The responsivity at a wavelength of 3 μm at room temperature increases obviously when the i layer thickness is increased from 0.75 μm to 1.5 μm. But the devices with 2 μm i layer thickness have much lower responsivities because of the large lattice mismatch of the InAsPSb layer.
The best performance in our devices is the device with an i layer thickness of 1.5 μm and an area of 500 × 500 μm2. Responsivities at room temperature in the 0.7-1.64 A/W range were obtained in the 2-3.5 μm wavelength range, corresponding to external quantum efficiencies within 50-67 %. If the 65 % transmittance of the surface of the devices is considered, the internal quantum efficiency can be as high as 100 %. And a peak of detectivity of 5.4 × 109 cm-Hz1/2/W was obtained at the wavelength of 3.05 μm. The ideal R0A of our 1.5-um-i-layer samples is 0.77 Ω-cm2. The best detectivity is expected to be 1.67 × 1010 cmHz1/2/W at 3.05 μm with a 100 % quantum efficiency. | en |
dc.description.provenance | Made available in DSpace on 2021-06-15T05:50:27Z (GMT). No. of bitstreams: 1 ntu-99-R97943094-1.pdf: 1833382 bytes, checksum: e27af5da70d4f63f173a065412db3933 (MD5) Previous issue date: 2010 | en |
dc.description.tableofcontents | 目 錄
中文摘要I AbstractIII 附表索引VII 附圖索引VIII 第一章 序論1 1.1中紅外線波段的應用1 1.2中紅外線光偵測器的歷史演進與研究概況2 1.3 InAsPSb/InAs異質接面4 1.4論文架構5 第二章 元件製程與量測方法9 2.1光偵測器結構的成長9 2.2光偵測器元件的製程10 2.3量測系統架構14 2.3.1光激發螢光光譜(Photoluminescence, PL)量測14 2.3.2電壓電流特性量測15 2.3.3光反應度(photoresponse)量測15 第三章 實驗結果與討論23 3.1 EPMA和XRD分析23 3.2光偵測樣品的低溫光激發螢光(PL)頻譜.25 3.3電壓電流特性曲線26 3.4 R0A分析.30 3.5光響應度(responsivity)分析31 3.6偵測率(D*)35 第四章 結論61 參考文獻63 | |
dc.language.iso | zh-TW | |
dc.title | 銻磷砷化銦/砷化銦中紅外線光偵測器
銻磷砷化銦/砷化銦中紅外線光偵測器的製程與光電特性 | zh_TW |
dc.title | Fabrication and Optoelectronic Characterization of InAsPSb/InAs Mid-infrared Photodetectors | en |
dc.type | Thesis | |
dc.date.schoolyear | 98-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 毛明華,王智祥,陳建光 | |
dc.subject.keyword | 光偵測器,銻磷砷化銦/砷化銦,光響應度,量子效率,偵測率, | zh_TW |
dc.subject.keyword | photodetectors,InAsPSb/InAs,responsivity,quantum efficiency,detectivity, | en |
dc.relation.page | 68 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2010-08-19 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
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