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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/40213
Title: | P型氧化鋅特性分析 PROPERTY ANALYSIS OF P TYPE ZNO |
Authors: | Yuan-Jen Chang 張原禎 |
Advisor: | 黃建璋(JianJang Huang) |
Keyword: | p型氧化鋅, p-type ZnO, |
Publication Year : | 2008 |
Degree: | 碩士 |
Abstract: | 我們在全氧的環境下於GaAs 基板上,濺鍍磷摻雜的氧化鋅薄膜,並於之後做RTA處理於800度3 分鐘,成功成長出了P型氧化鋅薄膜,其電阻為0.00096Ω-cm,而電洞濃度達到 2.244 cm-3。並由XPS的分析,推測會形成這樣的結果,主要是因為氧化鋅內部產生 -2 的受體缺陷,並讓參與其中的磷,因為砷元素的摻雜,改變了氧化鋅晶格的結構 -2 的受體缺陷。並與鎵形成acceptor-donor-acceptor 鍵結對,導致電洞濃度的上升,並提昇了P型氧化鋅的材料特性。 We successfully fabricate a P-doped ZnO thin film on the GaAs substrate at O2 ambient. And then we apply the post annealing process in 800℃ with in 3 minutes.The resistivity of the film is 0.00096Ω-cm and the hole concentration is 2.244×1020 cm-3. The p-type film exits the acceptor-like complexes of AsZn-2VZn. The structure of the ZnO film has been changed due to the As doped. It helps P-doped to increase the PZn-2VZn complexes. The P-dopant and the Ga-dopant in the ZnO film form the acceptor-donor-acceptor complexes and the hole concentration will be inceased and promote the property of p-type ZnO film. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/40213 |
Fulltext Rights: | 有償授權 |
Appears in Collections: | 光電工程學研究所 |
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File | Size | Format | |
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ntu-97-1.pdf Restricted Access | 2.21 MB | Adobe PDF |
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