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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 黃建璋(JianJang Huang) | |
| dc.contributor.author | Yuan-Jen Chang | en |
| dc.contributor.author | 張原禎 | zh_TW |
| dc.date.accessioned | 2021-06-14T16:42:45Z | - |
| dc.date.available | 2011-08-08 | |
| dc.date.copyright | 2008-08-08 | |
| dc.date.issued | 2008 | |
| dc.date.submitted | 2008-07-31 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/40213 | - |
| dc.description.abstract | 我們在全氧的環境下於GaAs 基板上，濺鍍磷摻雜的氧化鋅薄膜，並於之後做RTA處理於800度3 分鐘，成功成長出了P型氧化鋅薄膜，其電阻為0.00096Ω-cm，而電洞濃度達到 2.244 cm-3。並由XPS的分析，推測會形成這樣的結果，主要是因為氧化鋅內部產生 -2 的受體缺陷，並讓參與其中的磷，因為砷元素的摻雜，改變了氧化鋅晶格的結構 -2 的受體缺陷。並與鎵形成acceptor-donor-acceptor 鍵結對，導致電洞濃度的上升，並提昇了P型氧化鋅的材料特性。 | zh_TW |
| dc.description.abstract | We successfully fabricate a P-doped ZnO thin film on the GaAs substrate at O2 ambient. And then we apply the post annealing process in 800℃ with in 3 minutes.The resistivity of the film is 0.00096Ω-cm and the hole concentration is 2.244×1020 cm-3. The p-type film exits the acceptor-like complexes of AsZn-2VZn. The structure of the ZnO film has been changed due to the As doped. It helps P-doped to increase the PZn-2VZn complexes. The P-dopant and the Ga-dopant in the ZnO film form the acceptor-donor-acceptor complexes and the hole concentration will be inceased and promote the property of p-type ZnO film. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-14T16:42:45Z (GMT). No. of bitstreams: 1 ntu-97-R95941067-1.pdf: 2261965 bytes, checksum: 195c2d2dc1babfd5c6942e106a8b7259 (MD5) Previous issue date: 2008 | en |
| dc.description.tableofcontents | 口試委員會審定書
誌謝…………………………………………………………………. …….I 中文摘要…………………………………………………………….…….II 英文摘要………………………………………………………………….III 第一章 簡介 1-1 背景簡介............................................................................................ 1 1-2 研究動機............................................................................................ 2 1-3 論文架構............................................................................................ 3 第二章 理論基礎 2-1 晶體結構及特性................................................................................ 4 2-1.1 氧化鋅晶體特性與結構......................................................... 6 2-1.2 氧化鋅的導電機制.................................................................... 8 2-1.3 氧化鋅的受體摻雜與缺陷........................................................ 12 2.1-4 摻雜的氧化鋅缺陷結構與機制探討........................................ 15 2.1-5 磷摻雜氧化鋅的磷摻雜來源.................................................... 15 2-2 濺鍍原理.......................................................................................... 17 2-2.1 直流濺鍍................................................................................... 17 2-2.2 射頻濺鍍................................................................................... 18 第三章 實驗步驟與方法 3-1 簡介.................................................................................................. 20 3-2 實驗材料.......................................................................................... 20 3-3 實驗設備.......................................................................................... 21 3-3.1 射頻濺鍍機................................................................................ 21 3-3.2 退火處理系統............................................................................ 22 3-3.3 Van Der Pauw法與霍爾量測................................................... .22 3-3.4 X光電子能譜儀........................................................................ 22 3-3.5 原子力掃瞄探針顯微鏡............................................................ 22 3-4 製作流程........................................................................................... 23 第四章 實驗結果與討論 4-1 簡介..................................................................................................... 24 4-2 濺鍍時Sapphire基板不加溫 對磷摻雜氧化鋅之影響………....... 25 4-3 濺鍍時Sapphire基板加溫 對磷摻雜氧化鋅之影響....................... 28 4-4 使用XPS對濺鍍於Sapphire基板的磷摻雜氧化鋅之特性分析......32 4-5 濺鍍時GaAs基板加溫 對兩種氧化鋅薄膜之影響..........................35 4-6 使用XPS對濺鍍於GaAs基板的兩種氧化鋅薄膜之特性分析...... 38 第五章 結論與未來展望 5-1 結論與未來展望.............................................................................. 43 參考文獻................................................................................................. 44 圖表目錄 圖目錄 第二章 理論基礎 圖2-1 氧化鋅之閃鋅礦結構圖................................................................6 圖2-2 本質氧化鋅之缺陷結構圖(a)氧缺陷結構圖(b)鋅填補於氧化鋅間隙。............................................................................................................ 7 圖2-3 製作P型氧化鋅摻雜圖.................................................................10 圖2-4 氮摻雜之氧化鋅缺陷結構圖…...................................................12 圖2-5 氧化鋅之氧缺陷結構圖…...........................................................13 圖2-6 磷摻雜的氧化鋅之缺陷結構圖(a)磷取代鋅的位置 (b)兩個磷分子佔據氧的位置 (c)不穩定的 PZn-2VZn結構圖 (d)較穩定的PZn-2VZn結構圖............................................................................................................ 14 圖2-7 共摻雜氧化鋅之示意圖…...........................................................16 圖2-8 acceptor-donor-acceptor 鍵結對能量圖..................................... 16 圖2-9 濺射過程示意圖.......................................................................... 19 圖2-10 直流濺鍍和射頻濺鍍系統裝置示意圖..................................... 19 第三章 實驗的步驟與方法 第四章 實驗結果與討論 圖4-1實驗架構圖.................................................………………………..24 圖4-2 磷摻雜的氧化鋅在未經過退火處理表面圖(a)2D圖(b)3D圖...26 圖4-3 磷摻雜的氧化鋅在經過退火處理表面圖(a)2D圖(b)3D圖…...27 圖4-4 濺鍍於Sapphire基板之磷摻雜氧化鋅RTA對電阻值之影響…31 圖4-5 濺鍍於Sapphire基板之磷摻雜氧化鋅對載子濃度之影響…...32 圖4-6 元件A3的XPS總譜…....................................... ......................34 圖4-7 元件A3之磷的 2s 頻譜…........................................................34 圖4-8 元件A5的XPS總譜...................................................................40 圖4-9 元件A5之砷的 3d 頻譜............................................................40 圖4-10 元件A5之磷的 2s頻譜.............................................................41 圖4-11 元件A5之鎵的頻譜..................................................................42 圖4-11 元件A5修正後之鎵的頻譜......................................................42 表目錄 第二章 理論基礎 表2-1 氧化鋅基本物理參數表..................................................................5 表2-1 P型氧化鋅發展文獻表.............................................................10 第三章 實驗的步驟與方法 表3-1 靶材規格表..................................................................................20 表3-2 基材規格表..................................................................................20 表3-3 射頻濺鍍機製程參數表..............................................................21 第四章 實驗結果與討論 表4-1 濺鍍時Sapphire基板不加溫之磷摻雜氧化鋅元件標號及製程參數表….........................................................................................................25 表4-2 濺鍍時Sapphire基板加溫之磷摻雜氧化鋅元件標號及製程參數表….............................................................................................................28 表4-3 元件A2在不同RTA處理後之電阻遷移率載子濃度與材料型態參數表….....................................................................................................29 表4-4 元件B2在不同RTA處理後之電阻遷移率載子濃度與材料型態參數表….....................................................................................................30 表4-5 元件C2在不同RTA處理後之電阻遷移率載子濃度與材料型態參數表….........................................................................................................30 表4-6 元件D2在不同RTA處理後之電阻遷移率載子濃度與材料型態參數表….........................................................................................................30 表4-7 濺鍍時Sapphire加溫之磷摻雜氧化鋅作為XPS分析之元件及製程參數表….................................................................................................32 表4-8 元件A3之磷的 2s 頻譜特性表…..............................................35 表4-9 濺鍍時GaAs基板加溫之兩種氧化鋅薄膜元件編號及製程參數表….............................................................................................................35 表4-10 元件A4在不同RTA處理後之電阻遷移率載子濃度與材料型態參數表….....................................................................................................36 表4-11 元件B4在不同RTA處理後之電阻遷移率載子濃度與材料型態參數表….....................................................................................................37 表4-12 元件C4在不同RTA處理後之電阻遷移率載子濃度與材料型態參數表….....................................................................................................37 表4-13 濺鍍時GaAs基板加溫之磷摻雜氧化鋅做XPS分析元件編號及製程參數表….............................................................................................38 表4-14 元件A5之砷的 3d 頻譜特性表…...........................................41 表4-15 元件A5之磷的 2s 頻譜特性表…...........................................41 | |
| dc.language.iso | zh-TW | |
| dc.subject | p型氧化鋅 | zh_TW |
| dc.subject | p-type ZnO | en |
| dc.title | P型氧化鋅特性分析 | zh_TW |
| dc.title | PROPERTY ANALYSIS OF P TYPE ZNO | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 96-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 林浩雄(Lin, Hao-Hsiung),林恭如(Lin, Gong-Ru) | |
| dc.subject.keyword | p型氧化鋅, | zh_TW |
| dc.subject.keyword | p-type ZnO, | en |
| dc.relation.page | 48 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2008-08-01 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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