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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/22492
標題: | 以光學方法評估氮化銦鎵/氮化鎵量子井之品質 Evaluating the Quality of InGaN/GaN Quantum Wells with Optical Measurements |
作者: | Chun-Hsien Lee 李俊賢 |
指導教授: | 楊志忠(Zhi-Zhong Yang) |
關鍵字: | 氮化銦鎵/氮化鎵量子井, InGaN/GaN Quantum Wells, |
出版年 : | 2010 |
學位: | 碩士 |
摘要: | 在本研究中,首先,我們以Ti:sapphire Laser 之二倍頻 (波長390nm)進行了temperature dependent photoluminescence (PL)、power dependent PL、temperature dependent time-resolved photoluminescence (TRPL)、power dependent TRPL的量測,觀察不同樣品之量子井的特性並比較。
接著,我們以He-Cd Laser (波長325nm) 進行了temperature dependent photoluminescence (PL)、power dependent PL的實驗,比較其結果與以Ti:sapphire Laser 之二倍頻之量測的不同。最後 我們以JSM-6701F的 Scanning Electron Microscope (SEM) 做了cathodoluminescence (CL) 量測,以及以Ti:sapphire Laser 之二倍頻 (波長390nm) 進行了temperature dependent time-resolved photoluminescence (TRPL)、power dependent TRPL之量測。 In this study, we first of all, demonstrated the results of temperature dependent photoluminescence (PL)’power dependent PL’temperature dependent time-resolved photoluminescence (TRPL) and power dependent TRPL with the second-harmonic generation of a fs Ti:sapphire Laser (λ=390nm). Observing the characteristics of quantum wells of of different samples. Second, we demonstrated the results of temperature dependent photoluminescence (PL) and power dependent PL with a He-Cd Laser (λ=325nm), and compared these results with which we did with the Ti: sapphire Laser. Finally, we did the cathodoluminescence (CL) measurement with the Scanning Electron Microscope JSM-6701F (SEM) , and the experiments of temperature dependent photoluminescence time-resolved (TRPL) and power measurement of dependent TRPL with the second-harmonic generation of a fs Ti:sapphire Laser (λ=390nm). |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/22492 |
全文授權: | 未授權 |
顯示於系所單位: | 光電工程學研究所 |
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