以光學方法評估氮化銦鎵/氮化鎵量子井之品質

Chun-Hsien Lee; 李俊賢

請用此 Handle URI 來引用此文件： http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/22492

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.advisor	楊志忠(Zhi-Zhong Yang)
dc.contributor.author	Chun-Hsien Lee	en
dc.contributor.author	李俊賢	zh_TW
dc.date.accessioned	2021-06-08T04:19:04Z	-
dc.date.copyright	2010-07-23
dc.date.issued	2010
dc.date.submitted	2010-07-23
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dc.identifier.uri	http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/22492	-
dc.description.abstract	在本研究中，首先，我們以Ti:sapphire Laser 之二倍頻 (波長390nm)進行了temperature dependent photoluminescence (PL)、power dependent PL、temperature dependent time-resolved photoluminescence (TRPL)、power dependent TRPL的量測，觀察不同樣品之量子井的特性並比較。接著，我們以He-Cd Laser (波長325nm) 進行了temperature dependent photoluminescence (PL)、power dependent PL的實驗，比較其結果與以Ti:sapphire Laser 之二倍頻之量測的不同。最後我們以JSM-6701F的 Scanning Electron Microscope (SEM) 做了cathodoluminescence (CL) 量測，以及以Ti:sapphire Laser 之二倍頻 (波長390nm) 進行了temperature dependent time-resolved photoluminescence (TRPL)、power dependent TRPL之量測。	zh_TW
dc.description.abstract	In this study, we first of all, demonstrated the results of temperature dependent photoluminescence (PL)’power dependent PL’temperature dependent time-resolved photoluminescence (TRPL) and power dependent TRPL with the second-harmonic generation of a fs Ti:sapphire Laser (λ=390nm). Observing the characteristics of quantum wells of of different samples. Second, we demonstrated the results of temperature dependent photoluminescence (PL) and power dependent PL with a He-Cd Laser (λ=325nm), and compared these results with which we did with the Ti: sapphire Laser. Finally, we did the cathodoluminescence (CL) measurement with the Scanning Electron Microscope JSM-6701F (SEM) , and the experiments of temperature dependent photoluminescence time-resolved (TRPL) and power measurement of dependent TRPL with the second-harmonic generation of a fs Ti:sapphire Laser (λ=390nm).	en
dc.description.provenance	Made available in DSpace on 2021-06-08T04:19:04Z (GMT). No. of bitstreams: 1 ntu-99-R97941010-1.pdf: 2692492 bytes, checksum: 14104f82fd7407bc5015e824c4a1517c (MD5) Previous issue date: 2010	en
dc.description.tableofcontents	Chapter 1 Introduction 1 1.1 Application of III-nitride Materials 1 1.2 Iidum Aggregation and Carrier Localization 2 1.3 Quantum-confined Stark Effect (QCSE) in InGaN/GaN Quantum Wells 3 1.4 Research motivations and topics 4 Chapter 2 Optical Measurements with Ti:sapphire Laser 12 2.1 Introduction 12 2.2 Temperature Dependent PL 12 2.3 Pump Power Dependent PL 15 2.4 Two-state Model 19 Chapter 3 Optical Measurements with He-Cd Laser 47 3.1 Introduction 47 3.2 Temperature Dependent PL and Pump Power Dependent PL 47 3.3 Cathodoluminescence (CL) Mapping 51 3.4 Time-resolved PL (TRPL) 51 Chapter 4 Conclusions 80 References 82
dc.language.iso	zh-TW
dc.subject	氮化銦鎵/氮化鎵量子井	zh_TW
dc.subject	InGaN/GaN Quantum Wells	en
dc.title	以光學方法評估氮化銦鎵/氮化鎵量子井之品質	zh_TW
dc.title	Evaluating the Quality of InGaN/GaN Quantum Wells with Optical Measurements	en
dc.type	Thesis
dc.date.schoolyear	98-2
dc.description.degree	碩士
dc.contributor.oralexamcommittee	謝明勳(Ming-Xun Hsien),徐大正(Ta-Cheng Hsu),洪盟淵(Meng-Yuan Hung)
dc.subject.keyword	氮化銦鎵/氮化鎵量子井,	zh_TW
dc.subject.keyword	InGaN/GaN Quantum Wells,	en
dc.relation.page	83
dc.rights.note	未授權
dc.date.accepted	2010-07-23
dc.contributor.author-college	電機資訊學院	zh_TW
dc.contributor.author-dept	光電工程學研究所	zh_TW
顯示於系所單位：	光電工程學研究所

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