奈米部分解離絕緣體上矽金氧半元件之關閉暫態分析

Abstract

本篇論文研究奈米級部分解離絕緣體上矽金氧半元件之暫態分析,元件關閉產生的效應。 第一章中先對絕緣體上矽金氧半元件(SOI)做一個簡介,包含他的結構及其優點,並且比較部分解離絕緣體上矽(partially-depleted SOI — PDSOI)和完全解離絕緣體上矽(fully-depleted SOI — FD SOI)之間的差異。 第二章主要在討論PD SOI元件暫態分析關閉時產生的效應，當Vd較大時會發生Latch現象 造成寄生雙載子電晶體不會關掉,所以汲極電流(drain current)不為0,而源極/集極長度(S/D L)較短者引起能隙縮小使得寄生雙載子電晶體性能變差，電流增益(current gain)較小,再來我們考慮不同lifetime產生的影響,最後分析撞擊游離(impact ionization)模型考慮能係縮小(bandgap narrowing)與否對元件關閉的影響。 第三章最後為總結與討論。

This thesis discuses the mechanism of the nanometer PD-SOI NMOS device while turning off. Chapter 1 gives a brief introduction about SOI technology and the scaling trends. We can see the advantage of using SOI devices comparing to Bulk device. Chapter 2, as verified by Medici, the 2D simulation software. It shows the difference between drain current voltage, base-emitter voltage, and Qn while turning off . With a smaller S/D length due to the weaker function of the parasitic bipolar device, drain current voltage is smaller. We also consider difference in lifetime and ii model for advance discussion. Chapter 3 is conclusion and discussion of this research.