請用此 Handle URI 來引用此文件：
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/9897完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 郭正邦 | |
| dc.contributor.author | Kai-Wei Lin | en |
| dc.contributor.author | 林楷煒 | zh_TW |
| dc.date.accessioned | 2021-05-20T20:48:05Z | - |
| dc.date.available | 2013-07-07 | |
| dc.date.available | 2021-05-20T20:48:05Z | - |
| dc.date.copyright | 2008-07-07 | |
| dc.date.issued | 2008 | |
| dc.date.submitted | 2008-07-03 | |
| dc.identifier.citation | [1] Kuo JB, Low-voltage SOI CMOS VLSI devices and circuits. New York:Wiley;
2001. [2] Lin IS, Su VC, Kuo JB, Chen D, Yeh CS, Tsai CZ, Ma M, STI-induced mechanical stress-related kink effect of 40nm PD SOI NMOS devices. EUROSOI 2008; 81-82. [3] Kuo JB, Lin I, Su V, Ma M, Tsai C, Yeh CS, Chen D, STI Mechanical-stress induced subthreshold kink effect of 40nm PD SOI NMOS device. ISDRS 2007;1-2. [4] Lin I, Su V, Kuo J, Lee R, Lin G, Chen D, Yeh C, Tsai C, Ma M, Influence of STI-Induced mechanical stress in kink effect of 65nm PD SOI CMOS devices. EDSSC 2007; 107-108. [5] Taurus TSUPREM-4 user guide. Synopsys: 2005. [6] Taurus Medici user guide. Synopsys; 2005. 1999;46:1, 254-258. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/9897 | - |
| dc.description.abstract | 本篇論文研究奈米級部分解離絕緣體上矽金氧半元件之暫態分析,元件關閉產生的效應。
第一章中先對絕緣體上矽金氧半元件(SOI)做一個簡介,包含他的結構及其優點,並且比較部分解離絕緣體上矽(partially-depleted SOI — PDSOI)和完全解離絕緣體上矽(fully-depleted SOI — FD SOI)之間的差異。 第二章主要在討論PD SOI元件暫態分析關閉時產生的效應，當Vd較大時會發生Latch現象 造成寄生雙載子電晶體不會關掉,所以汲極電流(drain current)不為0,而源極/集極長度(S/D L)較短者引起能隙縮小使得寄生雙載子電晶體性能變差，電流增益(current gain)較小,再來我們考慮不同lifetime產生的影響,最後分析撞擊游離(impact ionization)模型考慮能係縮小(bandgap narrowing)與否對元件關閉的影響。 第三章最後為總結與討論。 | zh_TW |
| dc.description.abstract | This thesis discuses the mechanism of the nanometer PD-SOI NMOS device while turning off. Chapter 1 gives a brief introduction about SOI technology and the scaling trends. We can see the advantage of using SOI devices comparing to Bulk device.
Chapter 2, as verified by Medici, the 2D simulation software. It shows the difference between drain current voltage, base-emitter voltage, and Qn while turning off . With a smaller S/D length due to the weaker function of the parasitic bipolar device, drain current voltage is smaller. We also consider difference in lifetime and ii model for advance discussion. Chapter 3 is conclusion and discussion of this research. | en |
| dc.description.provenance | Made available in DSpace on 2021-05-20T20:48:05Z (GMT). No. of bitstreams: 1 ntu-97-R95943045-1.pdf: 1822252 bytes, checksum: 06365095adce1d662f9cab038ee79035 (MD5) Previous issue date: 2008 | en |
| dc.description.tableofcontents | Chapter 1 SOI PD CMOS- cross section, scaling trends, and kink effects 1
1.1 SOI technology and scaling trends 1 1.2 PD cross section vs. FD cross section 3 1.3 結論 8 Chapter 2 Turn off 11 2.1 固定Vd Turn off 電流對時間的變化 13 2.2 討論淺溝槽隔離(STI)對元件所造成的機械張力對元件關閉的影響 16 2.2.1 討論元件關閉對汲極電流(Drain current), 基底-射極電壓Vbe(base-emmiter voltage),和薄膜內電子濃度(Qn)的影響 21 2.2.2 不同Lifetime對元件關閉所照成的影響 28 2.2.3 閘極電壓(gate voltage)對元件關閉所照成的影響 31 2.3 元件關閉(Turn off)機械張力模型及相對應之撞擊游離模型中考慮及不考慮能帶縮減模型比較 34 2.4 元件關閉(Turn off)總結論 41 Chapter 3 Conclusion and Suggestion 44 | |
| dc.language.iso | zh-TW | |
| dc.title | 奈米部分解離絕緣體上矽金氧半元件之關閉暫態分析 | zh_TW |
| dc.title | Turn-off transient analysis of PD SOI NMOS device | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 96-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 蔡成宗,陳正雄,林浩雄,林吉聰 | |
| dc.subject.keyword | 關閉 分析,部分解離絕緣體上矽金氧半,能隙, | zh_TW |
| dc.subject.keyword | Turn off,PD SOI,STI,BGN, | en |
| dc.relation.page | 46 | |
| dc.rights.note | 同意授權(全球公開) | |
| dc.date.accepted | 2008-07-03 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
| 顯示於系所單位： | 電子工程學研究所 | |
文件中的檔案：
| 檔案 | 大小 | 格式 | |
|---|---|---|---|
| ntu-97-1.pdf | 1.78 MB | Adobe PDF | 檢視/開啟 |
系統中的文件，除了特別指名其著作權條款之外，均受到著作權保護，並且保留所有的權利。