氣-液-固反應機制下之氮氧化鎵奈米結構成長特性研究

Abstract

本論文主要進行氮氧化鎵奈米結構之生長特性的探討，大致可分為兩個部分進行論述。第一部分為 VLS (Vapor Liquid Solid)機制以及管型高溫爐內的參數調變特性，第二部分為奈米結構的特殊生長方式。 在本論文中，會詳細介紹本實驗中會用到的鍍膜儀器例如濺鍍機(Sputter)、原子層沉積(Atomic Layer Deposition, ALD)，以及量測儀器如掃描式電子顯微鏡 (Scanning Electron Microscope, SEM)、光致發光量測 (Photoluminescence Measurement, PL)、X 射 線 光 電子能譜儀 ( X-ray Photoelectron Spectroscopy, XPS)等機台。利用管型高溫爐，並且在內部搭建導流架構使管內環境達到奈米線晶體的生長條件，並找出自此架構下的最佳參數，成功生長出了直徑200nm的奈米線結構，也利用黃光微影技術將此奈米結構做到可圖形化的階段，而後我們研究如何利用此方法將奈米線摻入稀土元素 Eu，並且利用 XPS 以及 PL 量測分析其含量，得知使用Eu2O3 粉末、Ga2O3粉末以及石墨粉的混合粉末可在此架構中成功生長出摻Eu的氮氧化鎵奈米線。

This thesis primarily investigates the growth characteristics of gallium oxynitride (GaON) nanostructures, which can be broadly divided into two parts. The first part focuses on the Vapor–Liquid–Solid (VLS) growth mechanism and the influence of various parameters within a tubular high-temperature furnace. The second part explores special growth techniques for nanostructures. In this work, we detail the deposition equipment used in the experiments, such as sputtering and atomic layer deposition (ALD), as well as the characterization tools including scanning electron microscopy (SEM), photoluminescence (PL) spectroscopy, and X-ray photoelectron spectroscopy (XPS). A tubular furnace system was constructed with an internal gas flow guiding structure to create suitable conditions for nanowire growth. Optimal parameters for GaON nanowire formation were identified, resulting in the successful synthesis of nanowires with diameters of approximately 200 nm. Furthermore, photolithography techniques were employed to achieve patterning of the nanostructures. Subsequent studies investigated the incorporation of europium (Eu) into the nanowires. Using a powder mixture Eu₂O₃, Ga₂O₃, and graphite as source materials, Eu-doped GaON nanowires were successfully synthesized within the developed growth architecture. The incorporation and optical properties of Eu were confirmed and analyzed using XPS and PL measurements.