微光點製程與厚度調變對氧化銦錫鋅色心共振腔二極體之影響

Abstract

本研究探討了微光點製程與厚度變化對於色心輻射二極體中法布立-佩羅共振腔(Fabry-Perot Etalon)效應的影響。微光點製程透過絕緣層氮化鋁的沉積、黃光微影和草酸緩衝溶液濕蝕刻技術，實現了最小寬度為2µm尺寸高精度、可重製的微發光點二維結構。本研究針對群創光電提供的兩種基板多晶矽玻璃基板與有鉬背金屬之多晶矽玻璃基板進行分析，以驗證光學共振腔對發光特性的影響。我們亦探討不同電漿功率對氧化銦錫鋅薄膜組成和特性的影響，結果顯示隨著氧化鋅比例的增加，元件的光學和電學特性均有顯著變化。最後，通過改變氧化銦錫鋅薄膜厚度，觀察到光譜中發光峰值的明顯移動及多個波峰現象，並使用Matlab程式建模進行模擬分析，證實共振腔效應對色心自發光二極體元件發光光譜的調制作用。 本研究結果提供了一種無需使用巨量轉移技術，即可製作最小寬度達2微米發光結構的製程方式，並通過光罩邏輯的設計與共濺鍍之技術，並調整元件之主動層厚度，即可得到可以改變發光波長且最小發光點寬度為2微米的色心輻射二極體。這些發現驗證了微型共振腔效應對元件發光光譜的影響，為未來發光二極體的開發提供了一種新的觀點。

This thesis investigates the effects of micro-light spot processing and thickness variation on the Miro-cavity effects in ITZnO color-center LEDs. The micro-spot process involves the deposition of an AlN insulating layer, photolithography, and oxalic acid buffer solution wet etching techniques, achieving highly precise, reproducible micro-light-emitting 2D structures with a minimum size of 2µm. In this study analyzes different substrate materials (such as p-poly and Mo-poly substrates) to verify the influence of optical resonant cavities on emission characteristics. Additionally, we explored the impact of different plasma power on the composition and properties of ITZnO thin films. The results showed significant changes in the optical and electrical properties of the devices with increasing ZnO ratio. Finally, by varying the thickness of the ITZnO films, noticeable shifts in emission peak positions and multiple peaks in the spectrum were observed. Matlab modeling and simulation confirmed the modulation effects of the resonant cavity on the emission spectra of the color-center LEDs. The results of this study provide a fabrication method for creating light-emitting structures with a minimum size of 2µm without the need for mass transfer technology. By designing and selecting the photomask, the emission point thickness can be adjusted to the desired level. These findings validate the influence of micro-cavity effects on the emission spectra of the devices, offering a new perspective for the development of light-emitting diodes in the future.