未來奈米元件的非傳統二維材料奈米圖案化

Abstract

摩爾定律一直是半導體產業發展的指導基準，但隨著電子裝置已發展到奈米級尺度，物理限制也隨之而來。二维材料為單層原子厚度的晶體，因其卓越的電學和光學特性而為人知曉，它超越了矽基電子元件的極限並且為推動後摩爾定律時代的有前途的材料。為了製作二維材料電子元件，微影製程已然是個成熟的技術並已在半導體產業中被廣泛使用。然而，當圖案大小縮放至奈米尺度，微影製程被瑞利判別準則所描述的解析度所限制，用來製作高解析度奈米特徵的技術的花費也會漸漸高漲，使得微影製程成本增加、難以普及。 在本論文中，我們研究不同超越微影製程極限的奈米圖案化技術。首先，我們展示利用自我限制和溫度控制的氧化過程來製作奈米特徵的自膨脹雙圖案化（SEDP）過程。為了擺脫傳統微影製程的幫助，我們接著著重於團聯式共聚合物的自組成以及奈米孔洞陽極氧化鋁生成，並且從中製作出直徑 37nm 的奈米級孔洞。

Moore’s law has been the guideline for the advancement in the semiconductor industry, but as electronics have reached nanoscale, physical limitations are met. 2D materials, which are single-layer atomic thickness solids, have emerged due to its exceptional electrical and optical properties, it surpasses the limits of silicon-based devices and are promising materials to advance the post-Moore era. To create 2D material devices, photolithography is a mature technique and has been widely used in the semiconductor industry. However, as patterns are scaled down to nanoscale, photolithography is limited by the resolution governed by Rayleigh’s criteria, the cost of the technology to create high resolution nano-features will also increase, making it the lithography process costly and harder to be accessed. In this thesis, we focused on nanopatterning techniques that surpasses the lithography limit. We first demonstrate with a self-expansion double patterning (SEDP) process to create nanometer features through a self-limiting and temperature-controlled oxidation process. To be freed from the help of conventional photolithography, we then focused on block copolymer self-assembly and porous-type anodic aluminum oxide formation, where we were able to create nanofeature pores with a diameter of 37 nm.