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  1. NTU Theses and Dissertations Repository
  2. 電機資訊學院
  3. 電子工程學研究所
Please use this identifier to cite or link to this item: http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/74750
Title: 利用機器學習於單一電晶體上實現多重模態感測效果
A Machine Learning-assisted Multi-modality Sensor Based on a Single Transistor
Authors: Wei-En Hsu
徐偉恩
Advisor: 林致廷
Keyword: 多模態感測器,機器學習,離子感測場效電晶體,物聯網感測器,元件物理,
Multi-modal sensor,machine learning,ISFET,IoT sensor,device physics,
Publication Year : 2019
Degree: 博士
Abstract: 由於物聯網的發展,次世代的感測器研究正在發生典範轉移。如今,多模態感測器已經在物聯網及人工智慧應用中扮演不可或缺的角色。為了更進一步降低功率及感測器尺寸,多模態感測元件將是未來感測技術的重要趨勢。因此,在本論文中,我們利用雙閘極離子感測場效電晶體成功實現多模態感測元件,成功同時量化酸鹼度,光及溫度三種物理變量。並提出虛擬感測器空間的模型來解釋多模態感測原理。首先,本論文提出利用時序產生虛擬感測器的理論,並解釋虛擬感測器空間與多重感測效應的關聯性。隨後,我們成功實現並驗證酸鹼度/光度雙重感測器以及酸鹼度/光/及溫度三重感測器,並且利用感測器的量測數據驗證我們所提出之虛擬感測空間的模型。利用本論文提出的虛擬感測器空間與多模態感測原理,我們可以將多模態感測器實現於單一感測元件中,並應用於感測器融合,物聯網以及人工智慧辨識等應用。
Internet-of-thing (IoT) has driven a paradigm shift to the next-generation sensor architecture. Nowadays, multi-modal sensors are essential for various IoT and AI applications. To achieve ultra-low power and size reduction, single-device-multi-sensor could be a promising direction of sensor technologies. Therefore, we have realized a machine learning-assisted multi-modal sensing device based on a dual-gate ion-sensitive field-effect transistor (DG-ISFET) and proposed a virtual sensor space model to effectively explain the fact of multi-sensing. In the first part, we propose a sequential method to generate virtual sensors and a virtual sensor space model to connect the physical sensing device and multi-sensing functionalities. Afterwards, we successfully realized and validated a pH/light dual-modal sensor and a pH/light/temperature 3-dimensional multi-modal sensor. In addition, the virtual sensor space model is also validated. With the proposed virtual sensor space model, multi-modalities sensing can be achieved on single device. It has great potential applying to sensor fusion and AI recognition technologies.
URI: http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/74750
DOI: 10.6342/NTU201904386
Fulltext Rights: 有償授權
Appears in Collections:電子工程學研究所

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