光固化型奈米壓印－石英母模製備及表面處理之研究

Abstract

奈米壓印微影技術是一種利用電子束微影技術在母模上製作奈米尺度之圖形，然後將母模壓在塗佈有高分子材料之基材上，以達到圖形轉移目的之微奈米機電製程技術，具有可量產和低成本等優點。 本研究以石英作為母模材料，先後於石英母模上沉積與塗佈厚度約100nm之鉻薄膜與380nm之正光阻ZEP-520A，然後利用電子束微影技術在光阻上定義圖形，經曝光、顯影後，利用高密度活性離子蝕刻系統對鉻、石英進行蝕刻，完成母模之製備，然後利用脫模劑Tridecafluoro-1,1,2,2,tetrahydrooctyl trichlorosilane對石英母模進行表面處理，以在石英母模表面形成脫膜層，降低石英母模之表面能量。 最後，採用光固化奈米壓印技術，將表面處理後之母模壓印到塗佈有負光阻mr-L 6000.3 XPe之矽基材上，以獲得與石英母模一樣之圖形。 研究結果顯示：本研究已成功地在石英母模上完成線寬為80nm~120nm之圖形，並成功地將母模上之圖形移轉到塗佈有負光阻mr-L 6000.3 XPe之基材上。

Nanoimprint lithography technology (NIL) has emerged as one of the most promising technologies for high-throughput nanoscale patterning. It consists in replicating the patterns of template fabricated by electron beam lithography and reactive ion etching, by deforming physically a cross-linked polymer coated on substrate. In this research, quartz is selected as the template material because of its transparency and high hardness. First, a 100nm thick Cr as a conducting layer is deposited on quartz template by thermal evaporation. Then, a 380nm thick positive photo-resist ZEP-520A is spin coated on Cr layer. After E-beam lithography, the quartz template is fabricated by high density plasma reactive ion etch. Afterwards, the surface of the quartz template is treated by Tridecafluoro-1,1,2,2,tetrahydrooctyl trichlorosilane to form a self-assembling release layer. Finally, photo-curing NIL is accomplished by pressing the surface-treated template to Si-substrate coated with cross-linked polymer mr-L 6000.3Xpe. This research has successfully defined 60~100nm width resist features. Features of 80~120nm are resolved on the mode and transferred to the polymer after imprinting.