以多濾光區塊實現環境光偵測器

Abstract

本論文主題是以砷化鋁鎵材料製作環境光偵測器，著重在PIN光偵測器二極體上使用多濾光區塊結構實現環境光偵測器。首先我們挑選適當能隙之AlxGa1-xAs，形成PIN元件。其吸收層由3種AlxGa1-xAs成分堆疊而成。多濾光區塊結構是位於主吸收層之上的結構，使用砷化鎵與彩色光阻作為濾光層，這兩種材料的選擇可搭配出四種結構的濾光層。再改變各結構面積的大小，可得到不同反應譜，並找出接近V(λ)反應譜的濾光結構組合。僅使用GaAs濾波層的PIN光偵測二極體反應譜f’1函數值達到63.7%，使用多濾光區塊結構濾光層的PIN光偵測二極體f’1會改善至11.4%。

The work of this study is using multi-filter regions on the surface of a PIN photodiode to implement an ambient light detector. We choose three AlxGa1-xAs layers with different Al compositions to compose the absorption structure of the PIN photodiode. The multi-filter region structure is composed of four different combinations of GaAs and color resist layers. By adjusting the area ratio of these combinations, we can synthesize the luminosity function V(λ) which is proposed by Commission Internationale de l’Eclairage (CIE) in 1924. Through the implementation of the multi-filter regions on the PIN photodiode, we move response close to V(λ) and improve the f’1 error function from 63 .7% to 11.4%.