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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 林浩雄博士 | |
| dc.contributor.author | Cheng-hong Huang | en |
| dc.contributor.author | 黃正宏 | zh_TW |
| dc.date.accessioned | 2021-06-12T18:26:55Z | - |
| dc.date.available | 2010-08-28 | |
| dc.date.copyright | 2007-08-28 | |
| dc.date.issued | 2007 | |
| dc.date.submitted | 2007-08-09 | |
| dc.identifier.citation | 參考文獻：
[1] AVAGO Technologies Limited, “Ambient light sensing using Agilent HSDL900 white paper, ” 2003. www.avagotech.com [2] 盧慶儒, “零件採購 - 照度感測器朝小型化發展全力主攻可攜式應用, ” DIGITIMES Inc. 2006. http://tech.digitimes.com.tw/print.aspx?zNotesDocId=C5739FE31B46F5EA4825720C0037DA2B [3] Luminosity, “CIE(1924) Photopic V(λ), ”http://cvision.ucsd.edu/ [4] R. L. Petritz, “Theory of Photoconductivity in Semiconductor Films,” Phys. Rev. vol. 104, pp. 1508, 1956. [5] R. H. Bude, Photoconductivity of Solids (Wiley, New York, 1964). [6] SILONEX Inc., “Norp12 datasheet,”. www.silonex.com [7] New Japan Radio Co. Ltd., ”NJL6501R-3 datasheet, ” 2007. www.njr.co.jp [8] EASTMAN KODAK Inc., “Ambient light detection circuit, ” US Patent 2005012727, World Intellectual Property Organization. www.freepatentsonline.com [9] Hamamatsu Photonics, “Photo IC diode S9066-1， S9067-1 datasheet, ” 2007. www.hamamatsu.com [10] TAOS, Inc. , ”TSL2550 ambient light sensor with smbus interface datasheet, ” 2006. www.taosinc.com [11] Hamamatsu Photonics, “GaAsP photodiode Diffusion type G5645 datasheet, ” 2001. www.hamamatsu.com [12] Hamamatsu Photonics, “GaAsP photodiode G1746 G1747 datasheet,” 2001. www.hamamatsu.com [13] OSRAM Opto Semiconductors GmbH, “Appnote for Ambient light sensor SFH5711,” 2007. www.osram-os.com [14] Hong Xiao, “Introduction to Semiconductor Manufacturing.” Technology, Prentice Hall, 2001. [15] Microchem Corp. , “LORTM lift off Resists datasheet ”, http://www.microchem.com/products/pdf/lor_data_sheet.pdf ,2002. [16] R. A. Logan and F. K. Reinhart, ”Optical waveguides in GaAs - AlGaAs epitaxial layers,” J. Appl. phy. , Vol. 44, Issue 9, pp. 4172- 4176, 1973. [17] 奇美實業股份有限公司,“CR106G使用規格書”, http://www.chimei.com.tw/tw/products/product.asp?pid={17A849E1-D89B-419A-B4AC-AB3B4D7278F5} [18] 王俊評, “類人眼光偵測器之設計模擬與製程,”台灣大學電子所 碩士論文,2006. [19] Silicon photo-detector Responsivity spectrum, “Silicon photo-detector, 818UV in Newport Corporation Detector Calibration Report,” Newport Co. , pp. 1,1992. [20] Commission Internationale de l’Eclairage (1987) Methods of characterizing illuminance metersand luminance meters ：Performance, characteristics and specifications.CIE69 -1987. [21] V. Swaminathan, Materials Aspects of GaAs and InP Based Structures, pp. 273, Prentice Hall, 1991. [22] Sadao Adachi, Properties of Aluminum Gallium Arsenide, INSPEC, 1993. [23] E.P.O’ Reilly, properties of Gallium Arsenide, 2nd edition, EMIS Data reviews Series no. 2 (INSPEC, IEE, 1990) Ch. 7 p. 111-116. [24] S. M. Sze, physics of Semiconductor Devices, pp. 109, WILEYS, 1985. [25] AVAGO Technologies Limited,” Appnote for APDS9004 datasheet,” 2005. www.avagotech.com | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/27901 | - |
| dc.description.abstract | 本論文主題是以砷化鋁鎵材料製作環境光偵測器，著重在PIN光偵測器二極體上使用多濾光區塊結構實現環境光偵測器。首先我們挑選適當能隙之AlxGa1-xAs，形成PIN元件。其吸收層由3種AlxGa1-xAs成分堆疊而成。多濾光區塊結構是位於主吸收層之上的結構，使用砷化鎵與彩色光阻作為濾光層，這兩種材料的選擇可搭配出四種結構的濾光層。再改變各結構面積的大小，可得到不同反應譜，並找出接近V(λ)反應譜的濾光結構組合。僅使用GaAs濾波層的PIN光偵測二極體反應譜f’1函數值達到63.7%，使用多濾光區塊結構濾光層的PIN光偵測二極體f’1會改善至11.4%。 | zh_TW |
| dc.description.abstract | The work of this study is using multi-filter regions on the surface of a PIN photodiode to implement an ambient light detector. We choose three AlxGa1-xAs layers with different Al compositions to compose the absorption structure of the PIN photodiode. The multi-filter region structure is composed of four different combinations of GaAs and color resist layers. By adjusting the area ratio of these combinations, we can synthesize the luminosity function V(λ) which is proposed by Commission Internationale de l’Eclairage (CIE) in 1924. Through the implementation of the multi-filter regions on the PIN photodiode, we move response close to V(λ) and improve the f’1 error function from 63 .7% to 11.4%. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-12T18:26:55Z (GMT). No. of bitstreams: 1 ntu-96-R94941077-1.pdf: 728949 bytes, checksum: 02ad3ebef668d6bc3501189b33d012ee (MD5) Previous issue date: 2007 | en |
| dc.description.tableofcontents | 目 錄
中文摘要 I Abstract II 目錄 III 附表索引 V 附圖索引 VI 第一章 簡介 1 1.1 環境光偵測器 1 1.2 環境光偵測器的製作方式 2 1.3 論文架構 4 第二章 環境光偵測器製作及量測 11 2.1 環境光偵測器製作 11 2.1.1 環境光偵測器之磊晶成長與結構 11 2.1.2 光偵測器二極體製程 12 2.1.3 多濾光區塊結構之製作 17 2.2 反應譜量測系統設置 19 第三章 實驗結果與討論 31 3.1多濾光區塊結構對樣品C2133反應度頻譜波形之影響 31 3.2多濾光區塊結構對樣品R2648反應度頻譜波形之影響 32 第四章 結論 44 參考文獻 45 | |
| dc.language.iso | zh-TW | |
| dc.title | 以多濾光區塊實現環境光偵測器 | zh_TW |
| dc.title | Processing and characterization of multi-filter-region ambient light detector | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 95-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 李君浩博士,江永欣技術長 | |
| dc.subject.keyword | 環境光偵測器,照度計,可見光偵測器,照度, | zh_TW |
| dc.subject.keyword | ambient light detector,ambient light sensor,illuminance meter,visible light detector, | en |
| dc.relation.page | 47 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2007-08-09 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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