以脈衝雷射蒸鍍法生長單晶ITO薄膜

Abstract

以脈衝雷射蒸鍍法(PLD)在氧化鋁(Sapphire)基板上成長銦錫氧化物透明導電薄膜(Indium Tin Oxide Conductive Thin Film, ITO)，我們共使用了兩種不同的基板晶面(001)與(110)。 晶體結構是以X-ray繞射儀(XRD)來檢測，除了檢查與基板拋光面平行的晶面外亦量測了ITO與基板在介面上的彼此相對位置。XRD看到了晶面之間的干涉震盪圖形(thickness fringes)，表示ITO的晶面之間距離的一致性。 晶體的電性是以霍爾效應(Hall Effect)搭配四點量法來測量，證實為載子濃度約為 cm 之n-type半導體，電阻率約為 ，最大遷移率(Mobility)約為30 /V．s。 晶體表面的品質是以原子力顯微鏡來量測，粗糙度約為0.3nm。

The goal of this experiment is to grow transparent single crystal thin film of Indium Tin Oxide (ITO). First, we locate the parameters which are most suitable for our Pulsed Laser Deposition (PLD) equipments. Then we use X-ray diffraction techniques to determine the structure of our specimen and its relative orientation to the substrate. The thickness fringes are clearly observed, indicating a uniform film with negligible variation in lattice constant. By conducting Hall Effect measurements we measure the electric properties of the thin film. It shows that the electron mobility up to 30 /V．s at 300 K in a carrier concentration about cm . The resistivity of thin film is at the range of . Finally, we make use of the Atomic Force Microscope (AFM) to observe surface roughness of the thin film which can be as flat as 0.3nm.