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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 陳銘堯 | |
dc.contributor.author | Yen-Chieh Huang | en |
dc.contributor.author | 黃彥傑 | zh_TW |
dc.date.accessioned | 2021-06-08T06:32:34Z | - |
dc.date.copyright | 2006-07-27 | |
dc.date.issued | 2006 | |
dc.date.submitted | 2006-07-23 | |
dc.identifier.citation | [1]陳銘堯,簡介脈衝雷射蒸鍍法,物理雙月刊,15卷,5期,P669,1993
[2]D. Keith Bowen and Brian K. Tanner, “High Resolution X-ray Diffractometry and Topography”, Taylor & Francis, P151(1998) [3]蘇俊聰,利用快速脈衝雷射蒸鍍法成長氧化鋅薄膜,P39,2004,臺灣大學物理學系碩士論文 [4] D. Keith Bowen and Brian K. Tanner, “High Resolution X-ray Diffractometry and Topography”, Taylor & Francis,P64-P65,P125 (1998) [5]http://www.eeel.nist.gov/812/hall.html [6]蘇俊聰,利用快速脈衝雷射蒸鍍法成長氧化鋅薄膜,P40-P41,2004,臺灣大學物理學系碩士論文 [7]L.J. van der Pauw, ”A Method of Measuring Specific Resistivity and Hall Effect of Discs of Arbitrary Shapes” Philips Res. Rept.13, P1-9(1958) [8] 鎧柏科技有限公司,“掃描式探針顯微鏡講義” [9] http://www.psiainc.com/img/_xemode/035_001_01.gif [10]B.D.Cullity and S.R.Stock, ”Elements of X-ray Diffraction”, Prentice Hall; 3 edition, P177-P181,P519-P521(2001) [11]B.E.Warren, “X-ray Diffraction”, Dover Publications; Reprint edition, Chap.14.8(1990) [12]”Thin Film and Surface Characterization by Specular X-ray Reflectivity” ,Critical Reviews in Solid State and Material Sciences, Volume 22, Issue 1, 1997 | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/25834 | - |
dc.description.abstract | 以脈衝雷射蒸鍍法(PLD)在氧化鋁(Sapphire)基板上成長銦錫氧化物透明導電薄膜(Indium Tin Oxide Conductive Thin Film, ITO),我們共使用了兩種不同的基板晶面(001)與(110)。
晶體結構是以X-ray繞射儀(XRD)來檢測,除了檢查與基板拋光面平行的晶面外亦量測了ITO與基板在介面上的彼此相對位置。XRD看到了晶面之間的干涉震盪圖形(thickness fringes),表示ITO的晶面之間距離的一致性。 晶體的電性是以霍爾效應(Hall Effect)搭配四點量法來測量,證實為載子濃度約為 cm 之n-type半導體,電阻率約為 ,最大遷移率(Mobility)約為30 /V.s。 晶體表面的品質是以原子力顯微鏡來量測,粗糙度約為0.3nm。 | zh_TW |
dc.description.abstract | The goal of this experiment is to grow transparent single crystal thin film of Indium Tin Oxide (ITO). First, we locate the parameters which are most suitable for our Pulsed Laser Deposition (PLD) equipments. Then we use X-ray diffraction techniques to determine the structure of our specimen and its relative orientation to the substrate. The thickness fringes are clearly observed, indicating a uniform film with negligible variation in lattice constant.
By conducting Hall Effect measurements we measure the electric properties of the thin film. It shows that the electron mobility up to 30 /V.s at 300 K in a carrier concentration about cm . The resistivity of thin film is at the range of . Finally, we make use of the Atomic Force Microscope (AFM) to observe surface roughness of the thin film which can be as flat as 0.3nm. | en |
dc.description.provenance | Made available in DSpace on 2021-06-08T06:32:34Z (GMT). No. of bitstreams: 1 ntu-95-R91222057-1.pdf: 1008120 bytes, checksum: 23ac54ac721b19db9fe6e99bab0689f2 (MD5) Previous issue date: 2006 | en |
dc.description.tableofcontents | 1.簡介 1
2.ITO薄膜的製程 2.1靶材 2 2.2脈衝雷射蒸鍍法 2 2.3成長環境 3 3.X-ray繞射 3.1 Powder 5 3.2 Rocking Curve 7 3.3 Grazing 9 3.4φ-scan 10 4. 霍爾效應 4.1 van der Pauw 電阻率四點量法 21 4.2霍爾電壓量測 23 4.3量測結果 25 5.原子力顯微鏡 5.1 工作原理 27 5.2 相位差顯微術 31 6.結論 32 7.參考資料 33 | |
dc.language.iso | zh-TW | |
dc.title | 以脈衝雷射蒸鍍法生長單晶ITO薄膜 | zh_TW |
dc.title | Growing Single Crystal ITO Thin Film by Pulsed Laser Deposition | en |
dc.type | Thesis | |
dc.date.schoolyear | 94-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 陳政維,石明豐 | |
dc.subject.keyword | 氧化銦,脈衝雷射蒸鍍, | zh_TW |
dc.subject.keyword | ITO,PLD, | en |
dc.relation.page | 33 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2006-07-24 | |
dc.contributor.author-college | 理學院 | zh_TW |
dc.contributor.author-dept | 物理研究所 | zh_TW |
顯示於系所單位: | 物理學系 |
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