影像感測元件及微透鏡光電特性模擬

Abstract

This thesis focuses on simulation of solid-state image sensor. The parameters used are based on complementary metal-oxide-semiconductor process (CMOS) and CMOS image sensor (CIS) technology. The characteristics of a solid-state image sensor could be divided into two parts – electrical and optical. In this work, both of them are combined into one simulation structure, therefore, provide a good way to understand and design a pixel. The simulation of fundamental behavior of p-n photodiode and pinned photodiode is presented. And then optical structure, microlens, is put into the consideration together with photodiode simulation. The photoresponse mentioned in the following discussion is in terms of photocurrent of photodiode.