影像感測元件及微透鏡光電特性模擬

Shun-Wen Hsiao; 蕭舜文

請用此 Handle URI 來引用此文件： http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/25825

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DC 欄位	值	語言
dc.contributor.advisor	劉致為(Cheewee Liu)
dc.contributor.author	Shun-Wen Hsiao	en
dc.contributor.author	蕭舜文	zh_TW
dc.date.accessioned	2021-06-08T06:32:05Z	-
dc.date.copyright	2006-07-28
dc.date.issued	2006
dc.date.submitted	2006-07-24
dc.identifier.citation	F. W. Reynolds, U. S. Patent 3 011 089. G. P. Weckler, “A silicon photodevice to operate in a photon flux integration mode,” IEDM 1965. Abbas El Gamal and Helmy Eltoukhy, 'CMOS Image Sensors,' IEEE Circuits & Devices Magazine, May/June 2005. N. Teranishi et al., 'No Image Lag Photodiode Structure in the Interline CCD Image Sensor,' IEDM 1982. B. C. Burkey et al., 'The Pinned Photodiode for an Interline-Transfer CCD Image Sensor,' IEDM, 1984. Ji Soo Lee, Richard I. Hornsey, and David Renshaw, 'Analysis of CMOS Photodiodes—Part I: Quantum Efficiency,' IEEE Trans. Electron Devices, Vol. 50, No. 5, pp. 1233-1238, May 2003. S. M. Sze, Physics of Semiconductor Devices, 2nd Edition, pp. 749, Taipei, Taiwan R.O.C., Central Book Company. G. P. Wreckler et al., 'A silicon photodevice to operate in a photon flux integration mode,' IEDM, October 1965. ITRS Roadmap 2005. T. H. Hsu et al., 'An Effective Method to Improve the Sensitivity of Deep Sub-micrometer CMOS Image Sensors,' IEEE Electron Device Letters, Vol. 26, No. 8, Aug 2005 Ji Soo Lee, Richard I. Hornsey, and David Renshaw, 'Analysis of CMOS Photodiodes—Part I: Quantum Efficiency,' IEEE Trans. Electron Devices, Vol. 50, No. 5, pp. 1233-1238, May 2003.
dc.identifier.uri	http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/25825	-
dc.description.abstract	This thesis focuses on simulation of solid-state image sensor. The parameters used are based on complementary metal-oxide-semiconductor process (CMOS) and CMOS image sensor (CIS) technology. The characteristics of a solid-state image sensor could be divided into two parts – electrical and optical. In this work, both of them are combined into one simulation structure, therefore, provide a good way to understand and design a pixel. The simulation of fundamental behavior of p-n photodiode and pinned photodiode is presented. And then optical structure, microlens, is put into the consideration together with photodiode simulation. The photoresponse mentioned in the following discussion is in terms of photocurrent of photodiode.	en
dc.description.provenance	Made available in DSpace on 2021-06-08T06:32:05Z (GMT). No. of bitstreams: 1 ntu-95-R93943046-1.pdf: 4511728 bytes, checksum: 57c0bcbe4e4283e7ff15bf6fbf21b96b (MD5) Previous issue date: 2006	en
dc.description.tableofcontents	Contents List of Figures I List of Tables V Chapter 1 Introduction 1 Chapter 2 p-n Junction Photoresponse Characteristics 2.1 Introduction 5 2.2 Optical Absorption in Silicon 7 2.3 p-n Junction Photodiode 12 2.4 Summary 24 References Chapter 3 Pinned Photodiode and Pixel Operation 3.1 Introduction 26 3.2 Pinned Photodiode 27 3.3 Pixel Operation Mode 31 3.4 Summary 39 References Chapter 4 Pixel Photoresponse with Microlens 4.1 Introduction 40 4.2 Microlens and Backend Dielectric Films 43 4.3 Modeling and Analysis 48 4.4 Simulation 52 4.5 Summary 54 References Chapter 5 Conclusion and Future Work 56
dc.language.iso	en
dc.title	影像感測元件及微透鏡光電特性模擬	zh_TW
dc.title	Electrical and Optical Simulation of CMOS Image Sensor and Microlens	en
dc.type	Thesis
dc.date.schoolyear	94-2
dc.description.degree	碩士
dc.contributor.oralexamcommittee	馬金溝,林中一,李明逵,許慈軒
dc.subject.keyword	影像感測元件,微透鏡,	zh_TW
dc.subject.keyword	CMOS Image Sensor,Microlens,	en
dc.relation.page	57
dc.rights.note	未授權
dc.date.accepted	2006-07-25
dc.contributor.author-college	電機資訊學院	zh_TW
dc.contributor.author-dept	電子工程學研究所	zh_TW
顯示於系所單位：	電子工程學研究所

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