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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/18807
標題: | 電子束微影快速顯影技術之研究 Study of Rapid Development Technology in Electron Beam Lithography |
作者: | Hsiu-Yun Yeh 葉修昀 |
指導教授: | 管傑雄 |
關鍵字: | 電子束微影,顯影速率,電子散射,電子強度分佈, Electron beam lithography,developing speed,forescattered electron,backscattered electron,electron intensity distribution, |
出版年 : | 2014 |
學位: | 碩士 |
摘要: | 本篇論文的研究包含兩部份,其一,我們提出高斯圓的實驗方法,利用電子束曝光之單點及多點微影圖形在不同顯影時間下計算顯影速率與電子束能量分布的變化以及圖形間的電子散射相互影響關係,其二,透過建立之顯影速率的模型調整點距與劑量以及利用快速顯影的方法使微影圖形大小顯著下降,透過此方法,我們藉由縮短顯影時間去限制圖形的顯影範圍有效控制圖形之大小。
實驗中,我們發現在短顯影時間下,微影圖形將不受周遭其他的微影圖形之散射電子影響且顯影速率非常快,我們透過快速顯影方法將顯影範圍控制在Primary Beam的範圍中。 最後,透過利用高能量且散射角度更小的Primary beam,我們在經過計算之後,針對曝光圖形上的點距以及劑量作個別調整,畫出週期為100nm的line array,在利用快速顯影以及顯影速率模型後,成功地在無特殊結構的基板上,使線寬有效下降44%來到19.6奈米。 In this study, we have established an experiment of single and multiple spots to measure the radius under different developing time in electron beam lithography (EBL). By linking the beam energy and developing rate, we are able to find out the developing rate function and the interaction between multiple patterns. Following, we apply the rapid developing method and developing rate model to optimize the parameters so that we are able to limit the range of the patterns. In the experiment, we have found that the radius of central spot is not affected by the ones surrounded it. Besides, the developing rate is very high in a short developing time. As a result, if we use rapid developing method to limit the range of developed patterns in the range of primary beam, we can further narrow down the line width. Finally, we apply the primary beam and developing rate model on exposing line arrays. After optimizing the parameters such as dosage and spots distance and exposure line arrays with a period of 100nm, the line width decreases by 44% to 19.6nm. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/18807 |
全文授權: | 未授權 |
顯示於系所單位: | 光電工程學研究所 |
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ntu-103-1.pdf 目前未授權公開取用 | 3.06 MB | Adobe PDF |
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