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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 管傑雄 | |
dc.contributor.author | Hsiu-Yun Yeh | en |
dc.contributor.author | 葉修昀 | zh_TW |
dc.date.accessioned | 2021-06-08T01:27:37Z | - |
dc.date.copyright | 2014-08-14 | |
dc.date.issued | 2014 | |
dc.date.submitted | 2014-07-30 | |
dc.identifier.citation | [1] Mihir Parikh, “Corrections to proximity effects in electron beam lithography. I. Theory,” J. Appl. Phys., Vol. 50, No.6, June 1979
[2] Mihir Parikh, “Corrections to proximity effects in electron beam lithography. II. Implementation,” J. Appl. Phys., Vol. 50, No.6, June 1979 [3] Mihir Parikh, “Corrections to proximity effects in electron beam lithography. III. Experiments,” J. Appl. Phys., Vol. 50. No.6, June 1979 [4] T. H. P. Chang, 'Proximity effect in electron-beam lithography,' J. Appl. Phys., Vol. 12. No.6, Nov/Dec. 1975 [5] L. Stevens, R. Jonckheere, E. Froyen, S. Decoutere and D. Lanneer, “Determination of the proximity parameters in electron beam lithography using doughnut – structures,” Microelectronic Engineering 5 ,141-150, 1986 [6] Chris Mack. “Stochastic approach to modeling photoresist development” J. Vac. Sci. Technol. B 27(3), May/Jun 2009 [7] C.H.Lin, S.D.Tzu and Anthony Yen “Optical Proximity Correction by E-Beam Over-Correction” Microelectronic Engineering 46 (1999) 55-58 [8] Richard Rau, James H. McClellan and Timothy J. Drabik “Proximity Effevt Correction for Nanolithography” [9] I. Raptis, N. Glezos, E. Valamontes, E. Zervas, P. Argitis “Electron beam lithography simulation for high resolution and high-density patterns” Understanding of hydrogen silsesquioxane electron resist for sub-5-nm-half-pitch lithography” [10] Joel K. W. Yang, Bryan Cord, Huigao Duan, and Karl K. Berggren. “ [11] Ai, C.-C, “Adjust the exposure time and apply the surface microstructure to improve the electron beam lithography on the mask”, M. thesis, National Taiwan University, Taiwan, Jun. 2013 [12] Shao-Wen Chang, “Applying Hardware Structures to Suppress Proximity Effect and Charging Effect in E-beam Lithography” M. thesis, National Taiwan University, Taiwan, Jun. 2012 [13] X Chen, R E Palmer and A P G Robinson “A high resolution water soluble fullerene molecular resist for electron beam lithography” Nanotechnology 19 (2008) 275308 [14] H. Sailer, A. Ruderisch, D. P. Kern, and V. Schurig “Evaluation of calixarene—derivatives as high-resolution negative tone electron-beam resists” J. Vac. Sci. Technol. B 20 (6) , Nov/Dec 2002 [15] Joel K. W. Yang and Karl K. Berggren “Using high-contrast salty development of hydrogen silsesquioxane for sub-10-nm half-pitch lithography” J. Vac. Sci. Technol. B 25 (6) , Nov/Dec 2007 [16] XiaoMin Yang, Shuaigang Xiao, Wei Wu, Yuan Xu, Keith Mountfield, Robert Rottmayer, Kim Lee, David Kuo, and Dieter Weller “Challenges in 1 Teradot in . 2 dot patterning using electron beam lithography for bit-patterned media” J. Vac. Sci. Technol. B 25 (6), Nov/Dec 2007 [17] P. Li and S.-Y. Lee, S. C. Jeon, J. S. Kim, K. N. Kim, M. S. Hyun, J. J. Yoo, and J. W. Kim “Step-width adjustment in fabrication of staircase structures” J. Vac. Sci. Technol. B 28 (1) , Jan/Feb 2010 [18] Q. Dai, S.-Y. Lee a, ⇑, S.-H. Lee, B.-G. Kim, H.-K. Cho “Experiment-based estimation of point spread function in electron-beam lithography: Forward-scattering part” Microelectronic Engineering 88 (2011) 3054–3061 [19] Huigao Duan, Vitor R. Manfrinato, Joel K. W. Yang, Donald Winston, Bryan M. Cord, and Karl K. Berggren “Metrology for electron-beam lithography and resist contrast at the sub-10 nm scale” J. Vac. Sci. Technol. B 28 (6), Nov/Dec 2010 [20] S. A. Rishton and D. P. Kern “Point exposure distribution measurements for proximity correction in electron beam lithography on a sub100 nm scale” J. Vac. Sci. Technol. B5 (1), Jan/Feb 1987 [21] M. Gentili, L. Grella, A. Lucchesini, L. Luciani, L. Mastrogiacomo, and P. Musumeci “Energy density function determination in veryhighresolution electronbeam lithography” J. Vac. Sci. Techno!. B 8 (6), Nov/Dec 1990 [22] S. J. Wind, M. G. Rosenfield, G. Pepper, W. W. Molzen, and P. D. Gerber “Proximity correction for electron beam lithography using a threeGaussian model of the electron energy distribution” J. Vac. Sci. Technol. B7 (6), Nov/Dec 1989 [23] L. Stevens, R. Jonckheere, E. Froyen, S. Decoutere and D. Lanneer, “Determination of the proximity parameters in electron beam lithography using doughnut – structures,” Microelectronic Engineering 5 ,141-150, 1986 [24] Akio Misaka, Kenji Harafuji, and Noboru Nomura “Determination of proximity effect parameters in electronbeam lithography” J. Appl. Phys. 68 (12), 15 December 1990 [25] M. Rooks, N. Belic, E. Kratschmer, and R. Viswanathan “Experimental optimization of the electron-beam proximity effect forward scattering Parameter” J. Vac. Sci. Technol. B 23 (6) , Nov/Dec 2005 [26] Sergey Babin “Method for Measuring Absorbed Energy Density in Photoresist in a Laser Pattern Generation” SPIE Vol. 2726 / 859 | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/18807 | - |
dc.description.abstract | 本篇論文的研究包含兩部份,其一,我們提出高斯圓的實驗方法,利用電子束曝光之單點及多點微影圖形在不同顯影時間下計算顯影速率與電子束能量分布的變化以及圖形間的電子散射相互影響關係,其二,透過建立之顯影速率的模型調整點距與劑量以及利用快速顯影的方法使微影圖形大小顯著下降,透過此方法,我們藉由縮短顯影時間去限制圖形的顯影範圍有效控制圖形之大小。
實驗中,我們發現在短顯影時間下,微影圖形將不受周遭其他的微影圖形之散射電子影響且顯影速率非常快,我們透過快速顯影方法將顯影範圍控制在Primary Beam的範圍中。 最後,透過利用高能量且散射角度更小的Primary beam,我們在經過計算之後,針對曝光圖形上的點距以及劑量作個別調整,畫出週期為100nm的line array,在利用快速顯影以及顯影速率模型後,成功地在無特殊結構的基板上,使線寬有效下降44%來到19.6奈米。 | zh_TW |
dc.description.abstract | In this study, we have established an experiment of single and multiple spots to measure the radius under different developing time in electron beam lithography (EBL). By linking the beam energy and developing rate, we are able to find out the developing rate function and the interaction between multiple patterns. Following, we apply the rapid developing method and developing rate model to optimize the parameters so that we are able to limit the range of the patterns.
In the experiment, we have found that the radius of central spot is not affected by the ones surrounded it. Besides, the developing rate is very high in a short developing time. As a result, if we use rapid developing method to limit the range of developed patterns in the range of primary beam, we can further narrow down the line width. Finally, we apply the primary beam and developing rate model on exposing line arrays. After optimizing the parameters such as dosage and spots distance and exposure line arrays with a period of 100nm, the line width decreases by 44% to 19.6nm. | en |
dc.description.provenance | Made available in DSpace on 2021-06-08T01:27:37Z (GMT). No. of bitstreams: 1 ntu-103-R01941015-1.pdf: 3129590 bytes, checksum: 939c55a08a2de5296d71a58f5d638843 (MD5) Previous issue date: 2014 | en |
dc.description.tableofcontents | 口試委員審定書I
謝誌 II 摘要 III Abstract IV 圖目錄 VII 表目錄 IX 第一章 概論 1 1.1 前言 1 1.2 研究動機 2 1.3 論文架構 3 第二章 電子束微影理論及分析 4 2.1 電子束微影簡介 4 2.2 電子束微影中的不理想效應 7 2.2.1 鄰近效應(Proximity Effect)[4] 7 2.2.2 電荷累積效應(charging effect) 7 2.3 電子束之數值計算與分析方法 8 2.3.1 蒙地卡羅法(Monte-Carlo method) 8 2.3.2 高斯模型描述電子曝光強度分布 8 2.3.3 實驗分析法求得電子曝光強度分布 10 第三章 元件製備及量測方法 12 3.1 製程/量測儀器簡介 12 3.1.1 電子束微影系統(Electron Beam Lithography) 12 3.1.2 掃描式電子顯微鏡(Scanning Electron Microscope, SEM) 13 3.2 沉積二氧化矽薄膜之光罩基板 15 3.2.1 基板製作流程 15 3.2.2 製程技術介紹 16 3.3 實驗結果量測及數據分析 19 3.3.1 圈環法實驗流程 19 3.3.2 判定微影圖形直徑之方法 21 第四章 實驗結果與討論 24 4.1 實驗中使用基板之EID 24 4.2 利用單點實驗探討顯影速率分布 26 4.2.1 Single spot直徑隨不同顯影時間之變化趨勢 26 4.2.2 微影圖形直徑隨顯影時間變化之擬合公式 29 4.3 利用多點實驗探討微影圖形間的相互作用 33 4.3.1 多點微影圖形隨不同顯影時間之變化 35 4.3.2 顯影時間對多點微影圖形之影響 37 4.4 應用快速顯影及顯影速率模型曝光線陣列 39 4.4.1 Line Array 設計及參數調整 39 4.4.2 Line Array 之顯影結果 41 第五章 結論與未來展望 43 5.1 結論 43 5.2 未來工作與展望 44 參考文獻 45 | |
dc.language.iso | zh-TW | |
dc.title | 電子束微影快速顯影技術之研究 | zh_TW |
dc.title | Study of Rapid Development Technology in Electron Beam Lithography | en |
dc.type | Thesis | |
dc.date.schoolyear | 102-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 胡振國,孫建文,孫允武,賴聰賢 | |
dc.subject.keyword | 電子束微影,顯影速率,電子散射,電子強度分佈, | zh_TW |
dc.subject.keyword | Electron beam lithography,developing speed,forescattered electron,backscattered electron,electron intensity distribution, | en |
dc.relation.page | 47 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2014-07-30 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
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