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Title: | 利用分子束磊晶搭配氧氣電漿成長二氧化鉿於矽/砷化銦基板 HfO2 on Si/ InAs Grown by Oxygen Plasma-assisted Molecular Beam Epitaxy |
Authors: | Chang- Ying Chen 陳昶穎 |
Advisor: | 林浩雄(Hao-Hsiung Lin) |
Keyword: | 三五族半導體,二氧化鉿,分子束磊晶, iii-v,hfo2,mbe, |
Publication Year : | 2014 |
Degree: | 碩士 |
Abstract: | 本論文利用分子束磊晶系統串聯另一腔體搭配電子槍蒸鍍系統以及氧氣電漿在超高真空環境下建構一先成長III-V族材料再臨場成長氧化物的系統,其中由於分子束磊晶系統本身擁有反射式高能電子繞射儀,以作為磊晶即時表面監控。而此論文中在矽基板上成長二氧化鉿,針對氧氣電漿參數對氧化層影響進而改變氧氣流量以及射頻功率,以達到本系統最佳條件。而最後利用此最佳條件成長二氧化鉿於砷化銦基板上,並針對不同的介面處理而得到較佳的結果。 In this paper, we focus on the oxygen plasma how to affect the oxide quality. And we change the oxygen flow and the RF power to optimize our hafnium oxide which grow on silicon. And we use the best growth parameter to grow hafnium oxide on indium arsenic. We hope we can get a better result by different surface treatments . |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/18356 |
Fulltext Rights: | 未授權 |
Appears in Collections: | 電子工程學研究所 |
Files in This Item:
File | Size | Format | |
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ntu-103-1.pdf Restricted Access | 1.79 MB | Adobe PDF |
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