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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 林浩雄(Hao-Hsiung Lin) | |
| dc.contributor.author | Chang- Ying Chen | en |
| dc.contributor.author | 陳昶穎 | zh_TW |
| dc.date.accessioned | 2021-06-08T01:01:13Z | - |
| dc.date.copyright | 2015-02-04 | |
| dc.date.issued | 2014 | |
| dc.date.submitted | 2014-12-02 | |
| dc.identifier.citation | 參考文獻
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/18356 | - |
| dc.description.abstract | 本論文利用分子束磊晶系統串聯另一腔體搭配電子槍蒸鍍系統以及氧氣電漿在超高真空環境下建構一先成長III-V族材料再臨場成長氧化物的系統，其中由於分子束磊晶系統本身擁有反射式高能電子繞射儀，以作為磊晶即時表面監控。而此論文中在矽基板上成長二氧化鉿，針對氧氣電漿參數對氧化層影響進而改變氧氣流量以及射頻功率，以達到本系統最佳條件。而最後利用此最佳條件成長二氧化鉿於砷化銦基板上，並針對不同的介面處理而得到較佳的結果。 | zh_TW |
| dc.description.abstract | In this paper, we focus on the oxygen plasma how to affect the oxide quality. And we change the oxygen flow and the RF power to optimize our hafnium oxide which grow on silicon. And we use the best growth parameter to grow hafnium oxide on indium arsenic. We hope we can get a better result by different surface treatments . | en |
| dc.description.provenance | Made available in DSpace on 2021-06-08T01:01:13Z (GMT). No. of bitstreams: 1 ntu-103-R01943020-1.pdf: 1830355 bytes, checksum: af74069ecfaa05bc4cb0b13764de670c (MD5) Previous issue date: 2014 | en |
| dc.description.tableofcontents | 目錄
論文摘要......................................................................................................i Abstract.......................................................................................................ii 圖目錄.........................................................................................................v 表目錄......................................................................................................viii 第一章 序論..........................................................................................1 1.1電晶體之發展趨勢...........................................................................1 1.2 砷化銦材料介紹.............................................................................2 1.3 高介電係數材料介紹.....................................................................3 第二章 成長氧化鉿之實驗步驟與研究方法......................................5 2.1 矽 (Si) 基板的準備.......................................................................5 2.2 砷化銦 (InAs) 基板的準備...........................................................5 2.3 二氧化鉿(HfO2)薄膜之成長.........................................................6 2.4 電極之製作.....................................................................................6 2.5 氧化物磊晶系統.............................................................................7 2.6 二氧化鉿蒸鍍速率測試...............................................................10 2.7 穿透式電子顯微鏡.......................................................................10 2.8 X射線光電子能譜學.....................................................................11 第三章 二氧化鉿成長於矽基板製作與分析....................................12 3.1 二氧化鉿成長於矽基板(50nm HfO2/ Si)....................................12 3.2 Pt/50nm HfO2/ Si 之電性分析.....................................................13 3.3 Pt/50nm HfO2/ Si 之XPS分析.....................................................16 3.4 二氧化鉿成長於矽基板(10nm HfO2/ Si)....................................18 3.5 Pt/10nm HfO2/ Si 之電性分析.....................................................18 3.6 Pt/10nm HfO2/ Si 之XPS分析....................................................24 3.7 Pt/10nm HfO2/ Si 之TEM分析...................................................29 3.8 氧氣電漿之射頻功率對二氧化鉿之影響...................................30 第四章 二氧化鉿成長於砷化銦基板製作與分析............................33 4.1 二氧化鉿成長於砷化銦(10nm HfO2/ InAs)...............................33 4.2 Pt/10nm HfO2/InAs 之電性分析..................................................35 4.3 Pt/10nm HfO2/ InAs 之TEM、XPS分析......................................42 第五章 結論........................................................................................44 參考文獻.....................................................................................................45 | |
| dc.language.iso | zh-TW | |
| dc.title | 利用分子束磊晶搭配氧氣電漿成長二氧化鉿於矽/砷化銦基板 | zh_TW |
| dc.title | HfO2 on Si/ InAs Grown by Oxygen Plasma-assisted Molecular Beam Epitaxy | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 103-1 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 胡振國(Zhen-Guo Hu),毛明華(Ming-Hua Mao) | |
| dc.subject.keyword | 三五族半導體,二氧化鉿,分子束磊晶, | zh_TW |
| dc.subject.keyword | iii-v,hfo2,mbe, | en |
| dc.relation.page | 52 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2014-12-02 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
| 顯示於系所單位： | 電子工程學研究所 | |
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