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Title: | 圖案化藍寶石基板對發光二極體之影響 The influence of nano-patterned sapphire substrate in InGaN-based light emitting diodes |
Authors: | Po-Hsun Chen 陳柏勳 |
Advisor: | 管傑雄 |
Keyword: | 氮化鎵發光二極體,圖案化藍寶石基板,電子束微影,量子侷限史塔克效應,奈米結構, Light-emitting diode,QCSE,MOCVD,NPSSs,Electron-beam lithography,Wet-etching, |
Publication Year : | 2013 |
Degree: | 碩士 |
Abstract: | 成長在藍寶石基板上的氮化鎵發光二極體,會因為與藍寶石基板的晶格常數差異、熱膨脹係數不同,而對元件產生量子侷限化史塔克效應,使氮化鎵發光二極體發光效率下降。因此本篇論文想藉由在藍寶石基板上製作奈米圖案,探討對氮化鎵發光二極體造成的影響。吾人使用電子束微影系統搭配濕式蝕刻技術,製作出不同週期、不同基板佔有比例的奈米結構,並使用有機金屬化學氣相沉積系統進行氮化鎵磊晶。其後使用拉曼光譜系統確認磊晶品質,光致激發螢光系統量測主動層發光特性,最後使用低溫系統量測內部量子效率。 Growth of GaN-based light-emitting diodes on sapphire substrates , because of the differences between the lattice constant and thermal expansion coefficient , resulting in Quantum-Confined Stark Effect , reducing the LEDs efficiency. Therefore, this paper would like to be contacted by the production of nano-patterned sapphire substrates to explore on the GaN light emitting diodes impacts. I use e-beam lithography system with wet etching techniques to produce different periods, different substrate ratio nanostructures and use of metal organic chemical vapor deposition system for GaN epitaxy . Subsequently confirmed using Raman spectroscopy system to exam epitaxial quality, photoluminescence (PL) system active layer photoluminescence measurements, the last measurement using cryogenic system internal quantum efficiency. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/17147 |
Fulltext Rights: | 未授權 |
Appears in Collections: | 電子工程學研究所 |
Files in This Item:
File | Size | Format | |
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ntu-102-1.pdf Restricted Access | 4.25 MB | Adobe PDF |
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