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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/17147完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 管傑雄 | |
| dc.contributor.author | Po-Hsun Chen | en |
| dc.contributor.author | 陳柏勳 | zh_TW |
| dc.date.accessioned | 2021-06-07T23:58:27Z | - |
| dc.date.copyright | 2013-08-20 | |
| dc.date.issued | 2013 | |
| dc.date.submitted | 2013-08-17 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/17147 | - |
| dc.description.abstract | 成長在藍寶石基板上的氮化鎵發光二極體，會因為與藍寶石基板的晶格常數差異、熱膨脹係數不同，而對元件產生量子侷限化史塔克效應，使氮化鎵發光二極體發光效率下降。因此本篇論文想藉由在藍寶石基板上製作奈米圖案，探討對氮化鎵發光二極體造成的影響。吾人使用電子束微影系統搭配濕式蝕刻技術，製作出不同週期、不同基板佔有比例的奈米結構，並使用有機金屬化學氣相沉積系統進行氮化鎵磊晶。其後使用拉曼光譜系統確認磊晶品質，光致激發螢光系統量測主動層發光特性，最後使用低溫系統量測內部量子效率。 | zh_TW |
| dc.description.abstract | Growth of GaN-based light-emitting diodes on sapphire substrates , because of the differences between the lattice constant and thermal expansion coefficient , resulting in Quantum-Confined Stark Effect , reducing the LEDs efficiency. Therefore, this paper would like to be contacted by the production of nano-patterned sapphire substrates to explore on the GaN light emitting diodes impacts. I use e-beam lithography system with wet etching techniques to produce different periods, different substrate ratio nanostructures and use of metal organic chemical vapor deposition system for GaN epitaxy . Subsequently confirmed using Raman spectroscopy system to exam epitaxial quality, photoluminescence (PL) system active layer photoluminescence measurements, the last measurement using cryogenic system internal quantum efficiency. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-07T23:58:27Z (GMT). No. of bitstreams: 1 ntu-102-R00943106-1.pdf: 4354521 bytes, checksum: 0b5a16a951784e00b9221a59c9ee4540 (MD5) Previous issue date: 2013 | en |
| dc.description.tableofcontents | 目 錄
口試委員會審定書 i 誌謝 ii 中文摘要 iii 英文摘要 iv 第一章 導論 1 1.1. 前言 1 1.1. 研究動機 3 1.2. 論文架構 5 第二章 理論基礎與材料分析 6 2.1. 藍寶石基板簡介 6 2.2. 氮化鎵薄膜簡介 10 2.2.1. 晶體結構 10 2.2.2. 應變的產生 13 2.2.3. 錯位差排 15 2.2.4. 極化場 18 2.2.5. 量子侷限化史塔克效應(Q.C.S.E.) 21 2.2.6. 屏蔽效應(Screening Effect) 22 第三章 實驗儀器與樣本製備 23 3.1. 實驗儀器 23 3.1.1. 電子束微影系統 (Electron Beam Lithography) 23 3.1.2. 電子槍蒸鍍系統 (E-gun) 25 3.1.3. 電感耦合式電漿乾蝕刻機(ICP-RIE) 26 3.1.4. 掃描式電子顯微鏡 (SEM & FIB) 28 3.1.5. 有機金屬化學氣相沉積(MOCVD) 29 3.1.6. 光致激發螢光光譜量測系統 (PL Spectrometer) 30 3.2. 實驗樣品製備 32 第四章 實驗結果與討論 38 4.1. 拉曼光譜量測 45 4.2. 光致激發螢光光譜量測 48 4.3. 光致激發螢光光譜調變功率量測 51 4.4. 內部量子效應量測 54 第五章 結論 56 參考文獻 57 | |
| dc.language.iso | zh-TW | |
| dc.subject | 奈米結構 | zh_TW |
| dc.subject | 圖案化藍寶石基板 | zh_TW |
| dc.subject | 電子束微影 | zh_TW |
| dc.subject | 量子侷限史塔克效應 | zh_TW |
| dc.subject | 氮化鎵發光二極體 | zh_TW |
| dc.subject | Wet-etching | en |
| dc.subject | Light-emitting diode | en |
| dc.subject | QCSE | en |
| dc.subject | MOCVD | en |
| dc.subject | NPSSs | en |
| dc.subject | Electron-beam lithography | en |
| dc.title | 圖案化藍寶石基板對發光二極體之影響 | zh_TW |
| dc.title | The influence of nano-patterned sapphire substrate in InGaN-based light emitting diodes | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 101-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 林瑞明,孫允武,孫建文,吳肇欣 | |
| dc.subject.keyword | 氮化鎵發光二極體,圖案化藍寶石基板,電子束微影,量子侷限史塔克效應,奈米結構, | zh_TW |
| dc.subject.keyword | Light-emitting diode,QCSE,MOCVD,NPSSs,Electron-beam lithography,Wet-etching, | en |
| dc.relation.page | 60 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2013-08-17 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
| 顯示於系所單位： | 電子工程學研究所 | |
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