請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/17147
完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 管傑雄 | |
dc.contributor.author | Po-Hsun Chen | en |
dc.contributor.author | 陳柏勳 | zh_TW |
dc.date.accessioned | 2021-06-07T23:58:27Z | - |
dc.date.copyright | 2013-08-20 | |
dc.date.issued | 2013 | |
dc.date.submitted | 2013-08-17 | |
dc.identifier.citation | [1] S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama, “High-Brightness
InGaN Blue , Green and Yellow Light-Emitting Diodes with Quantum Well Structures “,Jpn. J. Appl. Phys. 34, L797(1995). [2] 史光國,“GaN藍色發光及雷射二極體之發展現況“,工業材料,126(1997), pp.154 [3] 廖偉材,“氮化鋁鎵/氮化鎵超晶格原子層磊晶之研究“,逢甲大學材料科學研究所,碩士論文 (2002). [4] W.K. Wang, D.S. Wuu, S.H. Lin, P. Han, R. H. Horng, T.C. Hsu, D.T. Huo,M.J. Jou, Y.H. Yu, and A. Lin, “Efficiency Improvement of Near-Ultraviolet InGaN LEDs Using Patterned Sapphire Substrates “, IEEE Journal of Quantum ELECTRONICSElectronics, Vol. 41, NO. 11, NOVEMBER (2005) [5] H.W. Huang, C.C. Kao, J.T. Chu, H.C. Kuo, S.C. Wang, and C.C.Yu, “Improvement of InGaN–GaN light-emitting diode performance with a nano-roughened p-GaN surface,” IEEE Photonics Technology Letters, Vol. 17(2005), pp.983 [6] H.W. Huang, C.C. Kao, J.T. Chu, H.C. Kuo, S.C. Wang, and C.C. Yu, “Improvement of InGaN–GaN light-emitting diode performance with a nano-roughened p-GaN surface,” IEEE Photonics Technology Letters, Vol. 17 (2005) , pp.983 [7] B. Heying, X.H. Wu, S. Keller, Y. Li, D. Kapolnek, B.P. Keller, S.P.Denbaars, and J.S. Speck, “Role of threading dislocation structureon the x-ray diffraction peak widths in epitaxial GaN films,”Applied Physics Letters, Vol. 68, (1996), pp.643 [8] Y. P. Varshni, Physica 34,149 (1967) [9] H. morkoc, “Nitride Semiconductors and Devices” , Springer (1999) [10] A. Chakraborty, B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, ” Nonpolar InGaN/GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak” Appl. Phys. Lett., 85, 5143 (2004) [11] W.K. Wang, D.S. Wuu, S.H.Lin, P. Han, R.H. Horng, T.C. Hsu, D.T. Huo, M.J. Jou, Y.H. Yu, and A. Lin,“Enhanced Output Power of GaN-Based LEDs With Nano-Patterned Sapphire Substrates”, IEEE Photonics Technology Letters, VOL. 20, NO. 13, JULY 1(2008) [12] Haiyong Gao, Fawang Yan, Yang Zhang, Jinmin Li, Yiping Zeng, Guohong Wang,” Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching” Solid-State Electronics 52 (2008),pp.962–967 [13] R.H. Horng, W.K. Wang, S.C. Huang, S.Y. Huang, S.H. Lin, C.F. Lin, D.S. Wuu,” Growth and characterization of 380-nm InGaN/AlGaN LEDs grown on patterned sapphire substrates”, Journal of Crystal Growth 298 (2007) ,pp.219–222 [14] H.Y. Shin,S.K. Kwon, Y.I. Chang,M.J. Cho,K.H. Park,” Reducing dislocation density in GaN films using a cone-shaped patterned sapphire substrate”, Journal of Crystal Growth 311 (2009) ,pp.4167–4170 [15] Z.H. Feng, Y.D. Qi, Z.D. Lu, Kei May Lau,” GaN-based blue light-emitting diodes grown and fabricated on patterned sapphire substrates by metalorganic vapor-phase epitaxy”, Journal of Crystal Growth 272 (2004) ,pp.327–332 [16] B. Gil, “Group III Nitride Semiconductor Compounds”, Oxford, New York (1998) [17] O. Ambacher,a) J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, and L. F. Eastman, “Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures”, Journal of Applied Physics, Vol. 85,NO. 6, 15 march (1999) [18] O. Ambacher,a) B. Foutz, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy,A. J. Sierakowski, W. J. Schaff, and L. F. Eastman, R. Dimitrov, A. Mitchell, and M. Stutzmann,“Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures”, Journal of Applied Physics, Vol. 87, NO.11,JANUARY(2000) [19] F. Dwikusuma, D. Saulys, and T. F. Kuech,”Study on sapphire surface preparation for III-nitride heteroepitaxial growth by chemical treatments”,Electrochemical Society,149, G603 (2002) [20] J. J. Chen, Y. K. Su, Fellow, IEEE, C. L. Lin, S. M. Chen, W. L. Li, and C. C. Kao,“Enhanced Output Power of GaN-Based LEDs With Nano-Patterned Sapphire Substrates“, IEEE Photonics Technology Letters, Vol.20, NO. 13, JULY 1 (2008) [21] C. C.Wang, H.Ku, C. C. Liu, K. K. Chong, C. I. Hung, Y. H.Wang, andM. P. Houng, “Enhancement of the light output performance for GaN based light-emitting diodes by bottom pillar structure,” Appl. Phys.Lett., vol. 91(2007), pp.121109-1–121109-3 [22] H. Gao, F. Yan, Y. Zhang, J. Li, Y. Zeng, and G.Wang, “Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale,”J. Appl. Phys., vol. 103(2008) ,pp.014314-1–014314-5 [23] C. L. Cheung, R. J. Nikolic, C. E. Reinhardt, and T. F. Wang, “Fabrication of nanopillars by nanosphere lithography,” J. Inst. Phys. Nanotechnol.,vol. 17 (2006), pp.1339–1343 [24] H. W. Huang, H. C. Kuo, J. T. Chu, C. F. Lai, C. C. Kao, T. C. Lu, S.C.Wang, R. J. Tsai, C. C. Yu, and C. F. Lin, “Nitride-based LEDs with nano-scale textured sidewalls using natural lithography,” J. Inst. Phys.Nanotechnol., vol. 17, (2006) pp.2998–3001, [25] T. S. Kim, S. M. Kim, Y. H. Jang, and G. Y. Jung, “Increase of light extraction from GaN based light emitting diodes incorporating patterned structure by colloidal lithography,” Appl. Phys. Lett., vol. 91(2007),pp.171114-1–171114-3 [26] L.-H. Peng, C.-W. Chuang, L.-H. Lou,” Piezoelectric effects in the optical properties of strained InGaN quantum wells”, Appl. Phys.Lett. VOL.74, NO.6, 8 FEBRUARY (1999) [27] Hongbo Yu, L. K. Lee, Taeil Jung, and P. C. Ku,” Photoluminescence study of semipolar {1011}InGaN/GaN multiple quantum wells grown by selective area epitaxy” Appl. Phys. Lett. ,90, 141906 (2007) [28] Y.H. Fang, R. Xuan, and C.L. Chao,” Improvement of the droop efficiency in InGaN-based light-emitting diodes by growing on GaN substrate”, Phys. Status Solidi C 9, No. 3–4 (2012),pp.786–789 [29] Q. Dai, M. F. Schubert,M. H. Kim, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer,G. Thaler, and M. A. Banas,” Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities”, Appl. Phys. Lett. 94, 111109 (2009) [30] Y.L. Li,Y.R. Huang, and Y.H. Lai,” Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness”, Appl. Phys. Lett. 91, 181113 (2007) | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/17147 | - |
dc.description.abstract | 成長在藍寶石基板上的氮化鎵發光二極體,會因為與藍寶石基板的晶格常數差異、熱膨脹係數不同,而對元件產生量子侷限化史塔克效應,使氮化鎵發光二極體發光效率下降。因此本篇論文想藉由在藍寶石基板上製作奈米圖案,探討對氮化鎵發光二極體造成的影響。吾人使用電子束微影系統搭配濕式蝕刻技術,製作出不同週期、不同基板佔有比例的奈米結構,並使用有機金屬化學氣相沉積系統進行氮化鎵磊晶。其後使用拉曼光譜系統確認磊晶品質,光致激發螢光系統量測主動層發光特性,最後使用低溫系統量測內部量子效率。 | zh_TW |
dc.description.abstract | Growth of GaN-based light-emitting diodes on sapphire substrates , because of the differences between the lattice constant and thermal expansion coefficient , resulting in Quantum-Confined Stark Effect , reducing the LEDs efficiency. Therefore, this paper would like to be contacted by the production of nano-patterned sapphire substrates to explore on the GaN light emitting diodes impacts. I use e-beam lithography system with wet etching techniques to produce different periods, different substrate ratio nanostructures and use of metal organic chemical vapor deposition system for GaN epitaxy . Subsequently confirmed using Raman spectroscopy system to exam epitaxial quality, photoluminescence (PL) system active layer photoluminescence measurements, the last measurement using cryogenic system internal quantum efficiency. | en |
dc.description.provenance | Made available in DSpace on 2021-06-07T23:58:27Z (GMT). No. of bitstreams: 1 ntu-102-R00943106-1.pdf: 4354521 bytes, checksum: 0b5a16a951784e00b9221a59c9ee4540 (MD5) Previous issue date: 2013 | en |
dc.description.tableofcontents | 目 錄
口試委員會審定書 i 誌謝 ii 中文摘要 iii 英文摘要 iv 第一章 導論 1 1.1. 前言 1 1.1. 研究動機 3 1.2. 論文架構 5 第二章 理論基礎與材料分析 6 2.1. 藍寶石基板簡介 6 2.2. 氮化鎵薄膜簡介 10 2.2.1. 晶體結構 10 2.2.2. 應變的產生 13 2.2.3. 錯位差排 15 2.2.4. 極化場 18 2.2.5. 量子侷限化史塔克效應(Q.C.S.E.) 21 2.2.6. 屏蔽效應(Screening Effect) 22 第三章 實驗儀器與樣本製備 23 3.1. 實驗儀器 23 3.1.1. 電子束微影系統 (Electron Beam Lithography) 23 3.1.2. 電子槍蒸鍍系統 (E-gun) 25 3.1.3. 電感耦合式電漿乾蝕刻機(ICP-RIE) 26 3.1.4. 掃描式電子顯微鏡 (SEM & FIB) 28 3.1.5. 有機金屬化學氣相沉積(MOCVD) 29 3.1.6. 光致激發螢光光譜量測系統 (PL Spectrometer) 30 3.2. 實驗樣品製備 32 第四章 實驗結果與討論 38 4.1. 拉曼光譜量測 45 4.2. 光致激發螢光光譜量測 48 4.3. 光致激發螢光光譜調變功率量測 51 4.4. 內部量子效應量測 54 第五章 結論 56 參考文獻 57 | |
dc.language.iso | zh-TW | |
dc.title | 圖案化藍寶石基板對發光二極體之影響 | zh_TW |
dc.title | The influence of nano-patterned sapphire substrate in InGaN-based light emitting diodes | en |
dc.type | Thesis | |
dc.date.schoolyear | 101-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 林瑞明,孫允武,孫建文,吳肇欣 | |
dc.subject.keyword | 氮化鎵發光二極體,圖案化藍寶石基板,電子束微影,量子侷限史塔克效應,奈米結構, | zh_TW |
dc.subject.keyword | Light-emitting diode,QCSE,MOCVD,NPSSs,Electron-beam lithography,Wet-etching, | en |
dc.relation.page | 60 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2013-08-17 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-102-1.pdf 目前未授權公開取用 | 4.25 MB | Adobe PDF |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。