圖案化藍寶石基板對發光二極體之影響

Abstract

成長在藍寶石基板上的氮化鎵發光二極體，會因為與藍寶石基板的晶格常數差異、熱膨脹係數不同，而對元件產生量子侷限化史塔克效應，使氮化鎵發光二極體發光效率下降。因此本篇論文想藉由在藍寶石基板上製作奈米圖案，探討對氮化鎵發光二極體造成的影響。吾人使用電子束微影系統搭配濕式蝕刻技術，製作出不同週期、不同基板佔有比例的奈米結構，並使用有機金屬化學氣相沉積系統進行氮化鎵磊晶。其後使用拉曼光譜系統確認磊晶品質，光致激發螢光系統量測主動層發光特性，最後使用低溫系統量測內部量子效率。

Growth of GaN-based light-emitting diodes on sapphire substrates , because of the differences between the lattice constant and thermal expansion coefficient , resulting in Quantum-Confined Stark Effect , reducing the LEDs efficiency. Therefore, this paper would like to be contacted by the production of nano-patterned sapphire substrates to explore on the GaN light emitting diodes impacts. I use e-beam lithography system with wet etching techniques to produce different periods, different substrate ratio nanostructures and use of metal organic chemical vapor deposition system for GaN epitaxy . Subsequently confirmed using Raman spectroscopy system to exam epitaxial quality, photoluminescence (PL) system active layer photoluminescence measurements, the last measurement using cryogenic system internal quantum efficiency.