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Title: | 利用原子層沉積技術成長二氧化鈦及氧化鋁複合氧化層-應用於金氧半電容元件之研究 Study of Metal-Oxide-Semiconductor Capacitors with Titanium Aluminum Oxide Gate Dielectrics Grown by Atomic Layer Deposition |
Authors: | Keng-Han Lin 林耕漢 |
Advisor: | 陳敏璋(Miin-Jang Chen) |
Keyword: | 原子層沉積技術,二氧化鈦,氧化鋁,二氧化鈦及氧化鋁複合氧化層,金屬氧化物半導體,高介電係數閘極介電層,鰭式場效電晶體, atomic layer deposition (ALD),titanium-aluminum oxide(TAO),high–κ gate dielectric,FinFET, |
Publication Year : | 2012 |
Degree: | 碩士 |
Abstract: | 本論文中,我們使用原子層沉積技術(Atomic Layer Deposition﹐ALD)成長二氧化鈦及氧化鋁複合氧化層(TAO)作為金屬氧化物半導體元件(MOS)中的高介電係數閘極介電層(high–κgate dielectric),當TiO2和Al2O3成分在適當比例時keff為12.4,經過電漿後處理,電容等效厚度(Capacitance Equivalent Thickness﹐CET)可以下降至大約1.69nm,而keff可高達19.2。由於鰭式場效電晶體(FinFET)的發展日趨重要,我們也將TAO成長在(110)方向P型矽基板上,當TiO2和Al2O3在適當比例時keff為11.5,但TAO與矽基板介面缺陷密度(Dit)比成長在100方向P型矽基板大,經過電漿後處理,keff可達17.1。另外我們發現利用ALD技術同時以不同氧化劑成長Al2O3作為閘極介電層,keff為6.01,電流密度可降低至2.1×10-8 A/cm2,介面品質也可以獲得改善。 In this thesis, we used remote plasma atomic layer deposition (RPALD) to deposit titanium-aluminum oxide (TAO) as the high–κ gate dielectric, and the effective dielectric constant keff=12.4 was achieved. After the plasma treatment, the capacitance equivalent thickness (CET) of TAO was reduced to1.69 nm and keff was enhanced to 19.2. Because the great interest of FinFET, the TAO based high-k gate dielectrics were also fabricated on (110)-oriented Si substrates. The TAO gate dielectrics with keff=11.5 was achieved on (110)–oriented Si substrates. However, Dit is much greater than the TAO on (100)-oriented Si substrates. After the plasma treatment, the effective dielectric constant keff of TAO gate dielectrics was improved to 17.1. In addition, Al2O3 gate dielectric with keff=6.01 and leakage current density Jg=2.1×10-8 A/cm2 was achieved by using ALD with diifferent oxidants. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/16283 |
Fulltext Rights: | 未授權 |
Appears in Collections: | 材料科學與工程學系 |
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ntu-101-1.pdf Restricted Access | 1.5 MB | Adobe PDF |
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