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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 陳敏璋(Miin-Jang Chen) | |
dc.contributor.author | Keng-Han Lin | en |
dc.contributor.author | 林耕漢 | zh_TW |
dc.date.accessioned | 2021-06-07T18:08:05Z | - |
dc.date.copyright | 2012-07-20 | |
dc.date.issued | 2012 | |
dc.date.submitted | 2012-07-18 | |
dc.identifier.citation | 第一章 參考文獻
[1] D. Edenfeld, A. B. Kahng, M. Rodgers, and Y. Zorian, '2003 technology roadmap for semiconductors,' Computer, vol. 37, 47, 2004. [2] M. Depas, B. Vermeire, P. Mertens, R. Van Meirhaeghe, and M. Heyns, 'Determination of tunnelling parameters in ultra-thin oxide layer poly-Si/SiO2/Si structures,' Solid-State Electronics, vol. 38, 1465, 1995. [3] S. H. Lo, D. Buchanan, Y. Taur, and W. Wang, 'Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's,' Electron Device Letters, IEEE, vol. 18, 209, 1997. [4] G. Wilk, R. Wallace, and J. Anthony, 'High-κ gate dielectrics: Current status and materials properties considerations,' Journal of Applied Physics, vol. 89, 5243, 2001. [5] J. Robertson, 'High dielectric constant gate oxides for metal oxide Si transistors,' Reports on Progress in Physics, vol. 69, 327, 2006. [6] O. Auciello, W. Fan, B. Kabius, S. Saha, J. Carlisle, R. Chang, C. Lopez, E. Irene, and R. Baragiola, 'Hybrid titanium–aluminum oxide layer as alternative high-k gate dielectric for the next generation of complementary metal–oxide–semiconductor devices,' Applied Physics Letters, vol. 86, 042904, 2005. [7] S. Campbell, H. S. Kim, D. Gilmer, B. He, T. Ma, and W. Gladfelter, 'Titanium dioxide (TiO2)-based gate insulators,' IBM journal of research and development, vol. 43, 383, 1999. [8] H. Frederikse, 'Recent studies on rutile (TiO2),' Journal of Applied Physics, vol. 32, 2211, 1961. [9] H. Tang, K. Prasad, R. Sanjines, P. Schmid, and F. Levy, 'Electrical and optical properties of TiO2 anatase thin films,' Journal of Applied Physics, vol. 75, 2042, 1994. [10] S. K. Kim, G. J. Choi, J. H. Kim, and C. S. Hwang, 'Growth Behavior of Al-Doped TiO2 Thin Films by Atomic Layer Deposition,' Chemistry of Materials, vol. 20, 3723, 2008. [11] R. L. Puurunen, 'Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process,' Journal of Applied Physics, vol. 97, 121301, 2005. [12] L. ICKnowledge, 'Technology Backgrounder: Atomic Layer Deposition,' ICKnowledge. com, 1, 2004. [13] H. Profijt, S. Potts, M. van de Sanden, and W. Kessels, 'Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges,' Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 29, 050801, 2011. [14] S. Heil, J. Van Hemmen, M. Van De Sanden, and W. Kessels, 'Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3,' Journal of Applied Physics, vol. 103, 103302, 2008. [15] J. Van Hemmen, S. Heil, J. Klootwijk, F. Roozeboom, C. Hodson, M. Van de Sanden, and W. Kessels, 'Plasma and Thermal ALD of Al2O3 in a Commercial 200 mm ALD Reactor,' Journal of the Electrochemical Society, vol. 154, G165, 2007. 第二章 參考文獻 [1] J. Bardeen and W. Brattain, 'Physical principles involved in transistor action,' Physical Review, vol. 75, 1208, 1949. [2] R. R. Schaller, 'Moore's law: past, present and future,' Spectrum, IEEE, vol. 34, 52, 1997. [3] D. Edenfeld, A. B. Kahng, M. Rodgers, and Y. Zorian, '2003 technology roadmap for semiconductors,' Computer, vol. 37, 47, 2004. [4] H. K. Tyagi and P. George, 'Tunneling currents through ultra thin HfO2/Al2O3/HfO2 triple layer gate dielectrics for advanced MIS devices,' Journal of Materials Science: Materials in Electronics, vol. 19, 902, 2008. [5] M. Bera and C. Maiti, 'Electrical properties of SiO2/TiO2 high-k gate dielectric stack,' Materials science in semiconductor processing, vol. 9, 909, 2006. [6] G. K. Dalapati, A. Sridhara, A. S. W. Wong, C. K. Chia, S. J. Lee, and D. Chi, 'Characterization of sputtered TiO2 gate dielectric on aluminum oxynitride passivated p-GaAs,' Journal of Applied Physics, vol. 103, 034508, 2008. [7] D. Liu and J. Robertson, 'Oxygen vacancy levels and interfaces of Al2O3,' Microelectronic Engineering, vol. 86, 1668, 2009. [8] C. H. Chen and J. G. Hwu, 'Stack engineering of low-temperature-processing Al2O3 dielectrics prepared by nitric acid oxidation for MOS structure,' Microelectronic Engineering, vol. 87, 686, 2010. [9] G. Wilk, R. Wallace, and J. Anthony, 'High-κ gate dielectrics: Current status and materials properties considerations,' Journal of Applied Physics, vol. 89, 5243, 2001. [10] A. I. Kingon, J. P. Maria, and S. Streiffer, 'Alternative dielectrics to silicon dioxide for memory and logic devices,' Nature, vol. 406, 1032, 2000. [11] Y. HY and B. CHO, 'Energy gap and band alignment for (HfO2)x(Al2O3)1-x on (100) Si,' Applied Physics Letters, vol. 81, 376, 2002. [12] K. Ramani, R. Singh, and V. Craciun, 'Hf–O–N and HfO2 barrier layers for Hf–Ti–O gate dielectric thin films,' Microelectronic Engineering, vol. 85, 1758, 2008. [13] U. Diebold, 'The surface science of titanium dioxide,' Surface Science Reports, vol. 48, 53, 2003. [14] S. K. Kim, G. W. Hwang, W.-D. Kim, and C. S. Hwang, 'Transformation of the Crystalline Structure of an ALD TiO2 Film on a Ru Electrode by O3 Pretreatment,' Electrochemical and Solid-State Letters, vol. 9, F5, 2006. [15] S. Kim, K. Kim, O. Kwon, S. Lee, C. Jeon, W. Park, C. Hwang, and J. Jeong, 'Dielectric Science and Materials-Structurally and Electrically Uniform Deposition of High-k TiO2 Thin Films on a Ru Electrode in Three-Dimensional Contact Holes Using Atomic Layer Deposition,' Electrochemical and Solid State Letters, vol. 8, 59, 2005. [16] P. Peacock and J. Robertson, 'Band offsets and Schottky barrier heights of high dielectric constant oxides,' Journal of Applied Physics, vol. 92, 4712, 2002. [17] W. Jeon, H. S. Chung, D. Joo, and S. W. Kang, 'TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition,' Electrochemical and Solid-State Letters, vol. 11, H19, 2008. [18] L. Shi, Y. Xia, K. Yin, and Z. Liu, 'Electrical hysteresis of the TiAlO dielectric films after high-temperature treatment,' Applied Physics Letters, vol. 92, 132912, 2008. [19] O. Auciello, W. Fan, B. Kabius, S. Saha, J. Carlisle, R. Chang, C. Lopez, E. Irene, and R. Baragiola, 'Hybrid titanium–aluminum oxide layer as alternative high-k gate dielectric for the next generation of complementary metal–oxide–semiconductor devices,' Applied Physics Letters, vol. 86, 042904, 2005. [20] Y. S. Kim and S. Jin Yun, 'Nanolaminated Al2O3–TiO2 thin films grown by atomic layer deposition,' Journal of Crystal Growth, vol. 274, 585-593, 2005. [21] D. Mitchell, G. Triani, D. Attard, K. Finnie, P. Evans, C. Barbe, and J. Bartlett, 'Atomic layer deposition of TiO2 and Al2O3 thin films and nanolaminates,' Smart materials and structures, vol. 15, S57, 2006. [22] J. W. Lim, S. J. Yun, and H.-T. Kim, 'Characteristics of AlxTi1−xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition,' Journal of the Electrochemical Society, vol. 154, G239, 2007. [23] C. H. Ko and W. J. Lee, 'Formation of Al2O3–TiO2 bilayer using atomic layer deposition and its application to dynamic random access memory,' Journal of Solid State Electrochemistry, vol. 11, 1391, 2007. [24] R. Choi, C. S. Kang, B. H. Lee, K. Onishi, R. Nieh, S. Gopalan, E. Dharmarajan, and J. C. Lee, 'High-quality ultra-thin HfO2 gate dielectric MOSFETs with TaN electrode and nitridation surface preparation,' VLSI Technology, 15. 2001. [25] Y. Kim, C. Lim, C. Young, K. Matthews, J. Barnett, B. Foran, A. Agarwal, G. Brown, G. Bersuker, and P. Zeitzoff, 'Conventional poly-Si gate MOS-transistors with a novel, ultra-thin Hf-oxide layer,' VLSI Technology, 167, 2003. [26] T. Hori, Gate dielectrics and MOS ULSIs: principles, technologies, and applications: Springer, 1997. [27] D.-G. Park, H.-J. Cho, I.-S. Yeo, J.-S. Roh, and J.-M. Hwang, 'Boron penetration in p+ polycrystalline-Si/Al2O3/Si metal–oxide–semiconductor system,' Applied Physics Letters, vol. 77, 2207, 2000. [28] V. Edon, Z. Li, M. C. Hugon, B. Agius, C. Krug, I. Baumvol, O. Durand, and C. Eypert, 'Electrical characteristics and interface structure of HfAlO/SiON/Si (001) stacks,' Applied Physics Letters, vol. 90, 122905, 2007. [29] W. Li, Z. Chen, R. N. Premnath, B. Kabius, and O. Auciello, 'Controllable giant dielectric constant in AlOx/TiOy nanolaminates,' Journal of Applied Physics, vol. 110, 024106, 2011. [30] L. Zhu, L. Zhang, and Q. Fang, 'X-ray photoelectron spectroscopy study of ZrO2/TiO2/Si stack,' Applied Physics Letters, vol. 91, 172902, 2007. [31] G. Alers, D. Werder, Y. Chabal, H. Lu, E. Gusev, E. Garfunkel, T. Gustafsson, and R. Urdahl, 'Intermixing at the tantalum oxide/silicon interface in gate dielectric structures,' Applied Physics Letters, vol. 73, 1517, 1998. [32] K. T. Lee, C. F. Huang, J. Gong, and B. H. Liou, 'Electrical Characteristics of Al2O3/TiO2/Al2O3 Nanolaminate MOS Capacitor on p-GaN With Post Metallization Annealing and (NH4)2SX Treatments,' Ieee Electron Device Letters, vol. 30, 907, 2009. [33] J. AARIK, A. AIDLA, A. KIISLER, T. UUSTARE, and V. SAMMELSELG, 'Effect of crystal structure on optical properties of TiO2 films grown by atomic layer deposition,' Thin Solid Films, vol. 305, 270, 1997. [34] J. Van Hemmen, S. Heil, J. Klootwijk, F. Roozeboom, C. Hodson, M. Van de Sanden, and W. Kessels, 'Plasma and Thermal ALD of Al2O3 in a Commercial 200 mm ALD Reactor,' Journal of the Electrochemical Society, vol. 154, G165, 2007. [35] S. E. Potts, W. Keuning, E. Langereis, G. Dingemans, M. Van De Sanden, and W. Kessels, 'Low temperature plasma-enhanced atomic layer deposition of metal oxide thin films,' Journal of the Electrochemical Society, vol. 157, P66, 2010. [36] L. M. Terman, 'An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes,' Solid-State Electronics, vol. 5, 285, 1962. [37] J. Miyoshi, J. Diniz, A. D. Barros, I. Doi, and A. A. G. V. Zuben, 'Titanium–aluminum oxynitride (TAON) as high-k gate dielectric for sub-32nm CMOS technology,' Microelectronic Engineering, vol. 87, 267, 2010. [38] N. Umezawa, K. Shiraishi, T. Ohno, H. Watanabe, T. Chikyow, K. Torii, K. Yamabe, K. Yamada, H. Kitajima, and T. Arikado, 'First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics,' Applied Physics Letters, vol. 86, 143507, 2005. [39] L. Wang, K. Xue, J. Xu, A. Huang, and P. K. Chu, 'Effects of plasma immersion ion nitridation on dielectric properties of HfO2,' Applied Physics Letters, vol. 90, 122901, 2007. [40] S. Sayan, S. Aravamudhan, B. Busch, W. Schulte, F. Cosandey, G. Wilk, T. Gustafsson, and E. Garfunkel, 'Chemical vapor deposition of HfO2 films on Si (100),' Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 20, 507, 2002. [41] P. E. Blochl and J. H. Stathis, 'Hydrogen electrochemistry and stress-induced leakage current in silica,' Physical Review Letters, vol. 83, 372, 1999. [42] Y. Mitani, T. Yamaguchi, H. Satake, and A. Toriumi, 'Reconsideration of hydrogen-related degradation mechanism in gate oxide,' Reliability physics symposium , 226,2007. [43] Y. M. Kim, J. U. Kim, and J. G. Han, 'Investigation on the pulsed DC plasma nitriding with optical emission spectroscopy,' Surface and Coatings Technology, vol. 151, 227, 2002. [44] H. H. Tseng and P. J. Tobin, 'Process to incorporate nitrogen at an interface of a dielectric layer in a semiconductor device,' United State Patents, 1995. [45] H. Niimi and G. Lucovsky, 'Monolayer-level controlled incorporation of nitrogen in ultrathin gate dielectrics using remote plasma processing: Formation of stacked “N–O–N” gate dielectrics,' Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 17, 2610, 1999. 第三章 參考文獻 [1] M. Bera and C. Maiti, 'Electrical properties of SiO2/TiO2 high-k gate dielectric stack,' Materials science in semiconductor processing, vol. 9, 909, 2006. [2] H. K. Tyagi and P. George, 'Tunneling currents through ultra thin HfO2/Al2O3/HfO2 triple layer gate dielectrics for advanced MIS devices,' Journal of Materials Science: Materials in Electronics, vol. 19, 902, 2008. [3] O. Auciello, W. Fan, B. Kabius, S. Saha, J. Carlisle, R. Chang, C. Lopez, E. Irene, and R. Baragiola, 'Hybrid titanium–aluminum oxide layer as alternative high-k gate dielectric for the next generation of complementary metal–oxide–semiconductor devices,' Applied Physics Letters, vol. 86, 042904, 2005. [4] W. Jeon, H. S. Chung, D. Joo, and S. W. Kang, 'TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition,' Electrochemical and Solid-State Letters, vol. 11, H19, 2008. [5] L. Shi, Y. Xia, K. Yin, and Z. Liu, 'Electrical hysteresis of the TiAlO dielectric films after high-temperature treatment,' Applied Physics Letters, vol. 92, 32912, 2008. [6] B. Yu, L. Chang, S. Ahmed, H. Wang, S. Bell, C. Y. Yang, C. Tabery, C. Ho, Q. Xiang, and T. J. King, 'FinFET scaling to 10 nm gate length,' IEDM, 251, 2002. [7] E. Nowak, T. Ludwig, I. Aller, J. Kedzierski, M. Leong, B. Rainey, M. Breitwisch, V. Gemhoefer, J. Keinert, and D. Fried, 'Scaling beyond the 65 nm node with FinFET-DGCMOS,' IEDM, 339, 2003. [8] H. S. P. Wong, D. J. Frank, P. M. Solomon, C. H. J. Wann, and J. J. Welser, 'Nanoscale cmos,' Proceedings of the IEEE, vol. 87, 537, 1999. [9] D. Hisamoto, W. C. Lee, J. Kedzierski, E. Anderson, H. Takeuchi, K. Asano, T. J. King, J. Bokor, and C. Hu, 'A folded-channel MOSFET for deep-sub-tenth micron era,' IEDM, 1032, 1998. [10] X. Huang, W. C. Lee, C. Kuo, D. Hisamoto, L. Chang, J. Kedzierski, E. Anderson, H. Takeuchi, Y. K. Choi, and K. Asano, 'Sub 50-nm FinFET: PMOS,' IEDM, 67,1999. [11] Y. K. Choi, N. Lindert, P. Xuan, S. Tang, D. Ha, E. Anderson, T. J. King, J. Bokor, and C. Hu, 'Sub-20 nm CMOS FinFET technologies,' IEDM, 19.1., 2001. [12] J. Kedzierski, D. M. Fried, E. J. Nowak, T. Kanarsky, J. H. Rankin, H. Hanafi, W. Natzle, D. Boyd, Y. Zhang, and R. A. Roy, 'High-performance symmetric-gate and CMOS-compatible Vt asymmetric-gate FinFET devices,' IEDM, 19.5., 2001. [13] K. Kim, K. K. Das, R. V. Joshi, and C. T. Chuang, 'Leakage power analysis of 25-nm double-gate CMOS devices and circuits,' Electron Devices, IEEE Transactions on, vol. 52, 980-986, 2005. [14] J. Kavalieros, B. Doyle, S. Datta, G. Dewey, M. Doczy, B. Jin, D. Lionberger, M. Metz, W. Rachmady, and M. Radosavljevic, 'Tri-gate transistor architecture with high-k gate dielectrics, metal gates and strain engineering,' VLSI, 50, 2006. [15] J. Kedzierski, M. Ieong, E. Nowak, T. S. Kanarsky, Y. Zhang, R. Roy, D. Boyd, D. Fried, and H. S. P. Wong, 'Extension and source/drain design for high-performance FinFET devices,' Electron Devices, IEEE Transactions on, vol. 50, 952, 2003. [16] H. Shang, L. Chang, X. Wang, M. Rooks, Y. Zhang, B. To, K. Babich, G. Totir, Y. Sun, and E. Kiewra, 'Investigation of FinFET devices for 32nm technologies and beyond,' VLSI Technology, 54, 2006. [17] I. Ferain, C. A. Colinge, and J. P. Colinge, 'Multigate transistors as the future of classical metal-oxide-semiconductor field-effect transistors,' Nature, vol. 479, 310-316, 2011. [18] M. Leskela and M. Ritala, 'Atomic layer deposition (ALD): from precursors to thin film structures,' Thin Solid Films, vol. 409, 138, 2002. [19] M. Yang, E. P. Gusev, M. Ieong, O. Gluschenkov, D. C. Boyd, K. K. Chan, P. M. Kozlowski, C. P. D'Emic, R. M. Sicina, and P. C. Jamison, 'Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics,' Electron Device Letters, IEEE, vol. 24, 339, 2003. [20] B. Mereu, C. Rossel, E. Gusev, and M. Yang, 'The role of Si orientation and temperature on the carrier mobility in metal oxide semiconductor field-effect transistors with ultrathin HfO2 gate dielectrics,' Journal of Applied Physics, vol. 100, 014504, 2006. [21] L. Trojman, L. Pantisano, I. Ferain, S. Severi, H. E. Maes, and G. Groeseneken, 'Mobility and dielectric quality of 1-nm EOT HfSiON on Si (110) and (100),' Electron Devices, IEEE Transactions on, vol. 55, 3414, 2008. [22] L. Nyns, L. A. Ragnarsson, L. Hall, A. Delabie, M. Heyns, S. Van Elshocht, C. Vinckier, P. Zimmerman, and S. De Gendt, 'Silicon orientation effects in the atomic layer deposition of hafnium oxide,' Journal of the Electrochemical Society, vol. 155, G9, 2008. [23] M. Inoue, Y. Satoh, M. Kadoshima, S. Sakashita, T. Kawahara, M. Anma, R. Nakagawa, H. Umeda, S. Matsuyama, and H. Fujimoto, 'Impact of area scaling on threshold voltage lowering in La-containing high-k/metal gate NMOSFETs fabricated on (100) and (110) Si,' VLSI Technology, 40, 2009. [24] N. Mise, T. Morooka, T. Eimori, T. Ono, M. Sato, S. Kamiyama, Y. Nara, and Y. Ohji, 'Proposal of Single Metal/Dual High-k Devices for Aggressively Scaled CMISFETs With Precise Gate Profile Control,' Electron Devices, IEEE Transactions on, vol. 56, 85, 2009. [25] J. AARIK, A. AIDLA, A. KIISLER, T. UUSTARE, and V. SAMMELSELG, 'Effect of crystal structure on optical properties of TiO2 films grown by atomic layer deposition,' Thin Solid Films, vol. 305, 270, 1997. [26] R. Iijima, L. F. Edge, J. Bruley, V. Paruchuri, and M. Takayanagi, 'Intrinsic Effects of the Crystal Orientation Difference between (100) and (110) Silicon Substrates on Characteristics of High-k/Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors,' Japanese Journal of Applied Physics, vol. 50, 061503, 2011. [27] J. Van Hemmen, S. Heil, J. Klootwijk, F. Roozeboom, C. Hodson, M. Van de Sanden, and W. Kessels, 'Plasma and Thermal ALD of Al2O3 in a Commercial 200 mm ALD Reactor,' Journal of the Electrochemical Society, vol. 154, G165, 2007. [28] S. E. Potts, W. Keuning, E. Langereis, G. Dingemans, M. Van De Sanden, and W. Kessels, 'Low temperature plasma-enhanced atomic layer deposition of metal oxide thin films,' Journal of the Electrochemical Society, vol. 157, 66, 2010. [29] S. Krishnan, H. Rusty Harris, P. Kirsch, C. Krug, C. Quevedo-Lopez, C. Young, B. H. Lee, R. Choi, N. Chowdhury, and S. Suthram, 'High Performing pMOSFETs on Si (110) for Application to Hybrid Orientation Technologies--Comparison of HfO2 and HfSiON,' IEDM, 1,2006. [30] L. M. Terman, 'An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes,' Solid-State Electronics, vol. 5, 285, 1962. [31] B. Goebel, D. Schumann, and E. Bertagnolli, 'Vertical n-channel MOSFETs for extremely high density memories: The impact of interface orientation on device performance,' Electron Devices, IEEE Transactions on, vol. 48, 897-906, 2001. [32] P. K. Hurley, B. J. O’Sullivan, F. N. Cubaynes, P. A. Stolk, F. P. Widdershoven, and J. H. Das, 'Examination of the Si(111)-SiO2, Si(110)-SiO2, and Si(100)-SiO2 Interfacial Properties Following Rapid Thermal Annealing,' Journal of the Electrochemical Society, vol. 149, G194, 2002. [33] G. Alers, D. Werder, Y. Chabal, H. Lu, E. Gusev, E. Garfunkel, T. Gustafsson, and R. Urdahl, 'Intermixing at the tantalum oxide/silicon interface in gate dielectric structures,' Applied Physics Letters, vol. 73, 1517, 1998. [34] P. E. Blochl and J. H. Stathis, 'Hydrogen electrochemistry and stress-induced leakage current in silica,' Physical Review Letters, vol. 83, 372, 1999. [35] Y. Mitani, T. Yamaguchi, H. Satake, and A. Toriumi, 'Reconsideration of hydrogen-related degradation mechanism in gate oxide,' Reliability physics symposium, 226, 2007. 第四章 參考文獻 [1] F. Campabadal, O. Beldarrain, M. Zabala, M. Acero, and J. Rafi, 'Comparison between Al2O3 thin films grown by ALD using H2O or O3 as oxidant source,' Electron Devices (CDE), 1-4, 2011. [2] D. Buchanan, E. Gusev, E. Cartier, H. Okorn-Schmidt, K. Rim, M. Gribelyuk, A. Mocuta, A. Ajmera, M. Copel, and S. Guha, '80 nm polysilicon gated n-FETs with ultra-thin Al2O3 gate dielectric for ULSI applications,' IEDM, 223, 2000. [3] F. Fishburn, R. Kauffman, R. Lane, T. McDaniel, K. Schofield, S. Southwick, R. Turi, and H. Wang, 'A highly manufacturable 110 nm EDRAM process with Al2O3 stack MIM capacitor for cost effective high density, high speed, low voltage ASIC memory applications,' VLSI Technology, 75, 2003. [4] S. Sarkar, J. H. Culp, J. T. Whyland, M. Garvan, and V. Misra, 'Encapsulation of organic solar cells with ultrathin barrier layers deposited by ozone-based atomic layer deposition,' Organic Electronics, vol. 11, 1896, 2010. [5] B. Hoex, J. Schmidt, R. Bock, P. Altermatt, M. van de Sanden, and W. Kessels, 'Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3,' Applied Physics Letters, vol. 91, 112107, 2007. [6] T. Mayer, J. Elam, S. George, P. Kotula, and R. Goeke, 'Atomic-layer deposition of wear-resistant coatings for microelectromechanical devices,' Applied Physics Letters, vol. 82, 2883, 2003. [7] M. Groner, J. Elam, F. Fabreguette, and S. M. George, 'Electrical characterization of thin Al2O3 films grown by atomic layer deposition on silicon and various metal substrates,' Thin Solid Films, vol. 413, 186-, 2002. [8] R. L. Puurunen, 'Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process,' Journal of Applied Physics, vol. 97, 121301, 2005. [9] O. Auciello, W. Fan, B. Kabius, S. Saha, J. Carlisle, R. Chang, C. Lopez, E. Irene, and R. Baragiola, 'Hybrid titanium–aluminum oxide layer as alternative high-k gate dielectric for the next generation of complementary metal–oxide–semiconductor devices,' Applied Physics Letters, vol. 86, 042904, 2005. [10] L. Shi, Y. Xia, K. Yin, and Z. Liu, 'Electrical hysteresis of the TiAlO dielectric films after high-temperature treatment,' Applied Physics Letters, vol. 92, 132912, 2008. [11] E. Gusev, M. Copel, E. Cartier, I. Baumvol, C. Krug, and M. Gribelyuk, 'High-resolution depth profiling in ultrathin Al2O3 films on Si,' Applied Physics Letters, vol. 76, 176, 2000. [12] J. W. Lim and S. J. Yun, 'Electrical properties of alumina films by plasma-enhanced atomic layer deposition,' Electrochemical and Solid-State Letters, vol. 7, F45, 2004. [13] J. Van Hemmen, S. Heil, J. Klootwijk, F. Roozeboom, C. Hodson, M. Van de Sanden, and W. Kessels, 'Plasma and Thermal ALD of Al2O3 in a Commercial 200 mm ALD Reactor,' Journal of the Electrochemical Society, vol. 154, G165, 2007. [14] A. Dillon, A. Ott, J. Way, and S. George, 'Surface chemistry of Al2O3 deposition using Al (CH3)3 and H2O in a binary reaction sequence,' Surface Science, vol. 322, 230, 1995. [15] S. George, A. Ott, and J. Klaus, 'Surface chemistry for atomic layer growth,' The Journal of Physical Chemistry, vol. 100, 13121, 1996. [16] J. B. Kim, D. R. Kwon, K. Chakrabarti, C. Lee, K. Y. Oh, and J. H. Lee, 'Improvement in Al2O3 dielectric behavior by using ozone as an oxidant for the atomic layer deposition technique,' Journal of Applied Physics, vol. 92, 6739, 2002. [17] S. K. Kim, S. W. Lee, C. S. Hwang, Y. S. Min, J. Y. Won, and J. Jeong, 'Low Temperature (< 100° C) Deposition of Aluminum Oxide Thin Films by ALD with O3 as Oxidant,' Journal of the Electrochemical Society, vol. 153, F69, 2006. [18] L. Wang, P. K. Chu, A. Anders, and N. W. Cheung, 'Effects of ozone oxidation on interfacial and dielectric properties of thin HfO2 films,' Journal of Applied Physics, vol. 104, 054117, 2008. [19] M. Groner, F. Fabreguette, J. Elam, and S. George, 'Low-temperature Al2O3 atomic layer deposition,' Chemistry of Materials, vol. 16, 639, 2004. [20] Y.-S. Min, C.-J. An, S.-K. Kim, J.-W. Song, and C.-S. Hwang, 'Growth and Characterization of Conducting ZnO Thin Films by Atomic Layer Deposition,' Bulletin of the Korean Chemical Society, vol. 31, 2503, 2010. [21] G. Higashi and C. Fleming, 'Sequential surface chemical reaction limited growth of high quality Al2O3 dielectrics,' Applied Physics Letters, vol. 55, 1963, 1989. [22] J. Ferguson, A. Weimer, and S. George, 'Atomic layer deposition of ultrathin and conformal Al2O3 films on BN particles,' Thin Solid Films, vol. 371, 95, 2000. [23] A. Ott, J. Klaus, J. Johnson, and S. George, 'Al2O3 thin film growth on Si (100) using binary reaction sequence chemistry,' Thin Solid Films, vol. 292, 135, 1997. [24] J. Kim, K. Chakrabarti, J. Lee, K. Y. Oh, and C. Lee, 'Effects of ozone as an oxygen source on the properties of the Al2O3 thin films prepared by atomic layer deposition,' Materials Chemistry and Physics, vol. 78, 733, 2003 | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/16283 | - |
dc.description.abstract | 本論文中,我們使用原子層沉積技術(Atomic Layer Deposition﹐ALD)成長二氧化鈦及氧化鋁複合氧化層(TAO)作為金屬氧化物半導體元件(MOS)中的高介電係數閘極介電層(high–κgate dielectric),當TiO2和Al2O3成分在適當比例時keff為12.4,經過電漿後處理,電容等效厚度(Capacitance Equivalent Thickness﹐CET)可以下降至大約1.69nm,而keff可高達19.2。由於鰭式場效電晶體(FinFET)的發展日趨重要,我們也將TAO成長在(110)方向P型矽基板上,當TiO2和Al2O3在適當比例時keff為11.5,但TAO與矽基板介面缺陷密度(Dit)比成長在100方向P型矽基板大,經過電漿後處理,keff可達17.1。另外我們發現利用ALD技術同時以不同氧化劑成長Al2O3作為閘極介電層,keff為6.01,電流密度可降低至2.1×10-8 A/cm2,介面品質也可以獲得改善。 | zh_TW |
dc.description.abstract | In this thesis, we used remote plasma atomic layer deposition (RPALD) to deposit titanium-aluminum oxide (TAO) as the high–κ gate dielectric, and the effective dielectric constant keff=12.4 was achieved. After the plasma treatment, the capacitance equivalent thickness (CET) of TAO was reduced to1.69 nm and keff was enhanced to 19.2. Because the great interest of FinFET, the TAO based high-k gate dielectrics were also fabricated on (110)-oriented Si substrates. The TAO gate dielectrics with keff=11.5 was achieved on (110)–oriented Si substrates. However, Dit is much greater than the TAO on (100)-oriented Si substrates. After the plasma treatment, the effective dielectric constant keff of TAO gate dielectrics was improved to 17.1. In addition, Al2O3 gate dielectric with keff=6.01 and leakage current density Jg=2.1×10-8 A/cm2 was achieved by using ALD with diifferent oxidants. | en |
dc.description.provenance | Made available in DSpace on 2021-06-07T18:08:05Z (GMT). No. of bitstreams: 1 ntu-101-R99527025-1.pdf: 1531405 bytes, checksum: 98f717114174bcd055434dcc415b04e4 (MD5) Previous issue date: 2012 | en |
dc.description.tableofcontents | 口試委員審定書 I
致謝 II 摘要 III Abstract IV 目錄 V 圖目錄 VIII 表目錄 XII 第一章 簡介 1 1.1 研究動機 1 1.2 原子層沉積技術 3 1.2.1 原子層沉積技術 3 1.2.2 遠程電漿輔助原子層沉積技術 6 1.3 論文導覽 7 1.4 參考文獻 9 第二章 利用遠程電漿輔助原子層沉積技術於(100)方向P型矽基板成長二氧化鈦及氧化鋁複合氧化層作為高介電係數閘極介電層 13 2.1 簡介 13 2.2 元件結構與製作步驟 14 2.3 實驗結果與討論 16 2.3.1 二氧化鈦之RPALD製程窗口 16 2.3.2 氧化鋁之RPALD製程窗口 17 2.3.3 不同組成成分比對TAO閘極介電層電性的影響 19 2.3.4 遠程電漿輔助氮氣處理對TAO閘極介電層電性的影響 24 2.3.5 遠程電漿輔助氫氣處理對TAO閘極介電層電性的影響 26 2.3.6 遠程電漿輔助氨氣處理對TAO閘極介電層電性的影響 29 2.4 結論 32 2.5 參考文獻 33 第三章 利用遠程電漿輔助原子層沉積技術於(110)方向P型矽基板成長二氧化鈦及氧化鋁複合氧化層作為高介電係數閘極介電層 41 3.1 簡介 41 3.2 元件結構與製作步驟 43 3.3 實驗結果與討論 44 3.3.1 二氧化鈦之RPALD製程窗口 44 3.3.2 氧化鋁之RPALD製程窗口 45 3.3.3 不同組成成分比對TAO閘極介電層電性的影響 47 3.3.4 遠程電漿輔助氨氣處理對TAO閘極介電層電性的影響 52 3.4 結論 55 3.5 參考文獻 56 第四章 利用原子層沉積技術成長氧化鋁作為高介電係數閘極介電層 63 4.1 簡介 63 4.2 氧化鋁之ALD製程窗口 64 4.3 利用光激發螢光技術檢測氧化鋁高介電係數閘極介電層與矽基板間介面性質 65 4.3.1 實驗設計 65 4.3.2 元件電性與光學性質的關係 67 4.4 利用原子層沉積技術以水及臭氧成長氧化鋁作為高介電係數閘極介電層 73 4.4.1 實驗設計 73 4.4.2 利用不同氧化劑成長對Al2O3閘極介電層電性的影響 74 4.5 結論 79 4.6 參考文獻 80 第五章 總結 85 | |
dc.language.iso | zh-TW | |
dc.title | 利用原子層沉積技術成長二氧化鈦及氧化鋁複合氧化層-應用於金氧半電容元件之研究 | zh_TW |
dc.title | Study of Metal-Oxide-Semiconductor Capacitors with Titanium Aluminum Oxide Gate Dielectrics Grown by Atomic Layer Deposition | en |
dc.type | Thesis | |
dc.date.schoolyear | 100-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 廖洺漢(Ming-Han Liao),郭錦龍(Chin-Lung Kuo),李敏鴻(Min-Hung Lee) | |
dc.subject.keyword | 原子層沉積技術,二氧化鈦,氧化鋁,二氧化鈦及氧化鋁複合氧化層,金屬氧化物半導體,高介電係數閘極介電層,鰭式場效電晶體, | zh_TW |
dc.subject.keyword | atomic layer deposition (ALD),titanium-aluminum oxide(TAO),high–κ gate dielectric,FinFET, | en |
dc.relation.page | 86 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2012-07-18 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 材料科學與工程學研究所 | zh_TW |
顯示於系所單位: | 材料科學與工程學系 |
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