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Title: | 電流重複利用超寬頻低雜訊放大器與變壓器結合功率放大器之研究與分析 Research of Current-reused UWB Low Noise Amplifier and Transformer Combined Differential Power Amplifier |
Authors: | Li-Yin Tseng 曾瓅潁 |
Advisor: | 黃天偉 |
Keyword: | 放大器,超寬頻,功率,變壓器,電流重複, amplifier,UWB,power,transformer,current-reused, |
Publication Year : | 2012 |
Degree: | 碩士 |
Abstract: | 毫米波傳送的直進性良好,在傳輸端與接收端之間沒有障礙物的環境中,毫米波便是一種良好的高速傳輸技術。當環境中有障礙物時,其間所產生之反射現象會使得訊號減弱,因此在傳輸距離較短的高頻頻段之內,毫米波充分突顯其優勢。放眼國內,現今於科學園區當中之微波處理系統;國防軍事上所需之雷達;甚至是太空計畫中的衛星通訊實驗,到處皆可發現毫米波的應用之廣泛。
微波功率放大器則是微波系統中重要架構之一,在現今無線通訊積體電路中更是扮演著不可或缺的角色。在訊號的傳播之中,訊號強度隨著傳播距離增長而減弱,成了電路設計上無法改變的先天限制,在訊號透過天線傳播之前必定要經過功率放大,因此設計一輸出功率高且有相當程度之功率增益效率的放大器成為了現階段微波毫米波技術發展的主要課題之一。而低雜訊放大器在整個射頻的接收端的設計上可說是個重要的關鍵,提供了足夠的增益以及低雜訊指數,藉此來壓抑其他元件對整體雜訊指數的影響,進一步地降低系統整體的雜訊指數,以便基頻訊號解調。因此在本碩士論文中,以功率放大器及低雜訊放大器的分析與設計做為主要探討的內容。 本碩士論文討論了一顆功率放大器、一顆整流器以及一顆低雜訊放大器。其中放大器欲使用在未來第四代行動通訊協定,而設計於2.5GHz,使用台積電提供之0.18微米互補式金氧半導體製程。整流器同樣設計於2.5GHz,結合第二顆功率放大器,以實現能量無線傳輸的實驗,使用的製程為穩懋提供之0.15微米砷化鎵假晶式高電子遷移率電晶體。低雜訊功率放大器設計於3.3GHz~10.3GHz的超寬頻頻段下,使用台積電提供之0.18微米互補式金氧半導體製程。 Microwave is suitable over line-of-sight propagation between transmit and receive ends without obstacles and it is a good high-speed transmission technique. If there were any obstacle between the transmission links, the reflection caused by obstacles may weaken the strength of signals, so that microwave has obvious advantages in high frequency which has short return path. Now in our country, there are variety of applications of microwave techniques, such as microwave processing systems in the Hsinchu Science Park, radar systems in military and national defense field, satellites and communication systems in space programs and so on. A power amplifier is one of the important components in microwave system, and plays an irreplaceable role in wireless communication integrated circuits. During the propagation of signals, the strength of signals decrease with the increase of the transmission distance, and that becomes unavoidable limit when we design RF circuits. We must amplify signals before propagating out of the antenna, so designing a high output power and acceptable power added efficiency power amplifier becomes a crucial step in the development of microwave technique. And a low noise amplifier is a key component in the design of RF receiver chain. A low noise amplifier offers enough gain and low noise figure, depressing the effects for noise figure from other components and reducing total noise figure in the whole system which causes signal demodulation more convenient. As the reasons above, the analysis and design of power amplifiers and low noise amplifiers is the main content in this thesis. In this thesis, one power amplifiers, one rectifier, and one low noise amplifier were discussed. The power amplifier was designed at 2.5GHz for 4th generation, and implemented in a standard TSMC 0.18μm CMOS technology. The rectifier was designed at 2.5GHz in order to integrate with the 2.5GHz power amplifier and use these components to apply to wireless transmission experiment. The rectifier was implemented in a standard WIN 0.15μm GaAs pHEMT technology. And the low noise amplifier was designed at 3.3-10.3GHz Ultra Wide Band, and implemented in a standard TSMC 0.18μm CMOS technology. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/16056 |
Fulltext Rights: | 未授權 |
Appears in Collections: | 電信工程學研究所 |
Files in This Item:
File | Size | Format | |
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ntu-101-1.pdf Restricted Access | 6.3 MB | Adobe PDF |
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