40奈米部份解離絕緣體上矽N型金氧半元件寄生雙載子電晶體電容模型CBE/CBC

Abstract

本論文敘述40奈米部份解離絕緣體上矽N型金氧半元件寄生雙載子電晶體之電容模型CBE/CBC。第一章對絕緣體上矽互補式金氧半元件(PD SOI CMOS)作介紹，並比較部份解離絕緣體上矽金氧半元件(PD SOI MOS)與完全解離絕緣體上矽金氧半元件(FD SOI MOS)。第二章先說明部分解離絕緣體上矽金氧半元件(PD SOI MOS)之電流傳導機制並且考慮浮動基體效應(floating-body effect)。接著利用Gummel-Poon model 解釋部分解離絕緣體上矽N型金氧半元件(PD SOI NMOS)之暫態行為。再利用數學分析方法推導部分解離絕緣體上矽N型金氧半元件(PD SOI NMOS)之寄生雙載子電晶體(parasitic bipolar device)電容模型CBE/CBC，且在直流情況下觀察電容行為。第三章為暫態分析，描述出部分解離絕緣體上矽N型金氧半(PD SOI NMOS)元件之寄生雙載子電晶體(parasitic bipolar device)電容CBE/CBC 之上升暫態行為。第四章為最後總結。

This thesis describes the model of the parasitic bipolar device in the 40nm PD SOI NMOS, and observes the charges in the thin film via transient analysis. The SOI CMOS device is described in chapter 1. Chapter 2 illustrates current mechanism considering the floating-body effect. For transient analysis , the Gummel-Poon model for the parasitic bipolar device in the PD SOI MOS device is very important. The CBE/CBC capacitance models are important in the Gummel-Poon model for transient analysis. CBE/CBC capacitance behavior during DC is then described. Then in chapter 3, the CBE/CBC capacitance behavior during turn-on transient of PD SOI NMOS device is described. Chapter 4 is the conclusion.