基於ABC模型之AlGaInP紅光µLED在低溫下側壁氧化與復合行為最佳化分析

Abstract

在本論文探討側壁水蒸氣氧化處理對不同尺寸之AlGaInP紅光微發光二極體（µLED）元件性能的影響，尺寸範圍涵蓋從100 × 100 μm²至5 × 5 μm²。透過調控氧化時間，我們發現適當的側壁氧化可有效提升元件發光強度並抑制非輻射複合現象。研究結果顯示，隨著元件尺寸縮小，最佳氧化時間呈現遞減趨勢，而在低溫環境下，此現象更加明顯，顯示氧化條件應依尺寸與操作溫度調整。經由ABC模型擬合與內部量子效率分析可得知，側壁氧化有助於降低Shockley–Read–Hall複合率，並提升輻射複合效率，尤以小尺寸元件最為顯著。本研究成果可作為未來高解析度AlGaInP µLED顯示器製程優化之重要依據。

This thesis investigates the influence of sidewall steam oxidation on the performance of AlGaInP red micro-light-emitting diodes (µLEDs) with varying mesa sizes, ranging from 100 × 100 μm² to 5 × 5 μm². By applying different oxidation durations, we demonstrate that appropriate sidewall oxidation effectively enhances optical output and mitigates nonradiative recombination. Notably, the optimal oxidation time becomes shorter as the device size decreases. This trend is further intensified at cryogenic temperatures, indicating that the oxidation condition should be tailored based on both geometry and temperature. Through ABC model fitting and internal quantum efficiency (IQE) analysis, we confirm that sidewall oxidation reduces Shockley–Read–Hall recombination and improves radiative efficiency, especially in smaller devices. These findings provide valuable insights for process optimization in the development of high-resolution AlGaInP µLED displays.