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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 黃建璋 | zh_TW |
| dc.contributor.advisor | Jian-Jang Huang | en |
| dc.contributor.author | 余承叡 | zh_TW |
| dc.contributor.author | Cheng-Jui Yu | en |
| dc.date.accessioned | 2025-08-21T16:58:33Z | - |
| dc.date.available | 2025-08-22 | - |
| dc.date.copyright | 2025-08-21 | - |
| dc.date.issued | 2025 | - |
| dc.date.submitted | 2025-08-07 | - |
| dc.identifier.citation | [1] T. Wu et al., "Mini-LED and micro-LED: promising candidates for the next generation display technology," Applied sciences, vol. 8, no. 9, p. 1557, 2018.
[2] H. E. Lee et al., "Micro light‐emitting diodes for display and flexible biomedical applications," Advanced Functional Materials, vol. 29, no. 24, p. 1808075, 2019. [3] A. R. Anwar, M. T. Sajjad, M. A. Johar, C. A. Hernández‐Gutiérrez, M. Usman, and S. Łepkowski, "Recent progress in micro‐LED‐based display technologies," Laser & Photonics Reviews, vol. 16, no. 6, p. 2100427, 2022. [4] Y. Huang, E.-L. Hsiang, M.-Y. Deng, and S.-T. Wu, "Mini-LED, Micro-LED and OLED displays: present status and future perspectives," Light: Science & Applications, vol. 9, no. 1, p. 105, 2020. [5] K. James Singh et al., "Micro-LED as a promising candidate for high-speed visible light communication," Applied Sciences, vol. 10, no. 20, p. 7384, 2020. [6] Y. Wu, J. Ma, P. Su, L. Zhang, and B. Xia, "Full-color realization of micro-LED displays," Nanomaterials, vol. 10, no. 12, p. 2482, 2020. [7] K. A. Bulashevich and S. Y. Karpov, "Impact of surface recombination on efficiency of III‐nitride light‐emitting diodes," physica status solidi (RRL)–Rapid Research Letters, vol. 10, no. 6, pp. 480-484, 2016. [8] M. Boroditsky et al., "Surface recombination measurements on III–V candidate materials for nanostructure light-emitting diodes," Journal of Applied Physics, vol. 87, no. 7, pp. 3497-3504, 2000. [9] P. Royo, R. Stanley, M. Ilegems, K. Streubel, and K. Gulden, "Experimental determination of the internal quantum efficiency of AlGaInP microcavity light-emitting diodes," Journal of applied physics, vol. 91, no. 5, pp. 2563-2568, 2002. [10] J.-T. Oh et al., "Light output performance of red AlGaInP-based light emitting diodes with different chip geometries and structures," Optics express, vol. 26, no. 9, pp. 11194-11200, 2018. [11] F. Olivier, S. Tirano, L. Dupré, B. Aventurier, C. Largeron, and F. Templier, "Influence of size-reduction on the performances of GaN-based micro-LEDs for display application," Journal of luminescence, vol. 191, pp. 112-116, 2017. [12] M. S. Wong et al., "Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments," Optics express, vol. 28, no. 4, pp. 5787-5793, 2020. [13] M. S. Wong et al., "Size-independent peak efficiency of III-nitride micro-light-emitting-diodes using chemical treatment and sidewall passivation," Applied Physics Express, vol. 12, no. 9, p. 097004, 2019. [14] S. Han et al., "AlGaInP-based Micro-LED array with enhanced optoelectrical properties," Optical Materials, vol. 114, p. 110860, 2021. [15] Y.-Y. Li et al., "Analysis of size-dependent quantum efficiency in AlGaInP micro–light-emitting diodes with consideration for current leakage," IEEE Photonics Journal, vol. 14, no. 1, pp. 1-7, 2021. [16] H.-H. Huang et al., "Investigation on reliability of red micro-light emitting diodes with atomic layer deposition passivation layers," Optics Express, vol. 28, no. 25, pp. 38184-38195, 2020. [17] M. S. Wong et al., "Recovering the efficiency of AlGaInP red micro-LEDs using sidewall treatments," Applied Physics Express, vol. 16, no. 6, p. 066503, 2023. [18] S.-H. Mun et al., "Improving the electrical and optical characteristics of algainp red micro-leds by double dielectric passivation," ECS Journal of Solid State Science and Technology, vol. 13, no. 2, p. 026002, 2024. [19] M.-H. Li et al., "Highly Efficient AlGaInP-Based Micro-LEDs Achieved by Plasma Sidewall Treatment," IEEE Transactions on Electron Devices, 2025. [20] Y.-C. Wang, C.-J. Yu, and J.-J. Huang, "Efficiency improvement of AlGaInP-based red micron-scale light-emitting diodes using sidewall steam oxidation," Discover Nano, vol. 20, no. 1, p. 57, 2025. [21] N. Holonyak Jr and J. M. Dallesasse, "Native oxide of an aluminum-bearing group III-V semiconductor," ed: Google Patents, 1996. [22] J. Dallesasse and N. Holonyak, "Oxidation of Al-bearing III-V materials: A review of key progress," Journal of Applied Physics, vol. 113, no. 5, 2013. [23] F. Kish et al., "Dependence on doping type (p/n) of the water vapor oxidation of high‐gap Al x Ga1− x As," Applied physics letters, vol. 60, no. 25, pp. 3165-3167, 1992. [24] K. Chang et al., "Microstructure and wet oxidation of low-temperature-grown amorphous (Al/Ga, As)," Journal of Applied Physics, vol. 89, no. 1, pp. 747-752, 2001. [25] R.-M. Lin, J.-C. Li, Y.-L. Chou, and M.-C. Wu, "Using the Taguchi method to improve the brightness of AlGaInP MQW LED by wet oxidation," IEEE photonics technology letters, vol. 18, no. 15, pp. 1642-1644, 2006. [26] S. Weidenfeld, H. Niederbracht, M. Eichfelder, M. Jetter, and P. Michler, "Transverse mode and polarization characteristics of AlGaInP-based VCSELs with integrated multiple oxide apertures," in Semiconductor Lasers and Laser Dynamics V, 2012, vol. 8432: SPIE, pp. 43-50. | - |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/99248 | - |
| dc.description.abstract | 在本論文探討側壁水蒸氣氧化處理對不同尺寸之AlGaInP紅光微發光二極體（µLED）元件性能的影響，尺寸範圍涵蓋從100 × 100 μm²至5 × 5 μm²。透過調控氧化時間，我們發現適當的側壁氧化可有效提升元件發光強度並抑制非輻射複合現象。研究結果顯示，隨著元件尺寸縮小，最佳氧化時間呈現遞減趨勢，而在低溫環境下，此現象更加明顯，顯示氧化條件應依尺寸與操作溫度調整。經由ABC模型擬合與內部量子效率分析可得知，側壁氧化有助於降低Shockley–Read–Hall複合率，並提升輻射複合效率，尤以小尺寸元件最為顯著。本研究成果可作為未來高解析度AlGaInP µLED顯示器製程優化之重要依據。 | zh_TW |
| dc.description.abstract | This thesis investigates the influence of sidewall steam oxidation on the performance of AlGaInP red micro-light-emitting diodes (µLEDs) with varying mesa sizes, ranging from 100 × 100 μm² to 5 × 5 μm². By applying different oxidation durations, we demonstrate that appropriate sidewall oxidation effectively enhances optical output and mitigates nonradiative recombination. Notably, the optimal oxidation time becomes shorter as the device size decreases. This trend is further intensified at cryogenic temperatures, indicating that the oxidation condition should be tailored based on both geometry and temperature. Through ABC model fitting and internal quantum efficiency (IQE) analysis, we confirm that sidewall oxidation reduces Shockley–Read–Hall recombination and improves radiative efficiency, especially in smaller devices. These findings provide valuable insights for process optimization in the development of high-resolution AlGaInP µLED displays. | en |
| dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2025-08-21T16:58:33Z No. of bitstreams: 0 | en |
| dc.description.provenance | Made available in DSpace on 2025-08-21T16:58:33Z (GMT). No. of bitstreams: 0 | en |
| dc.description.tableofcontents | 口試委員審定書 II
致謝 III 中文摘要 IV 英文摘要 V CONTENTS VI LIST OF FIGURES VIII LIST OF TABLE XIV Chapter 1 Introduction 1 1.1 Overview of Micro-LED Technology 1 1.2 Research Motivation 2 1.3 Objectives of This Study 5 1.4 Thesis outline 6 Chapter 2 Wet Oxidation Treatment of Red Micro-LEDs 8 2.1 Introduction to Wet Oxidation 8 2.1.1 Background of wet oxidation 8 2.1.2 Setup of sidewall oxidation 9 2.2 Fabrication of Micro-LEDs with sidewall oxidation 11 2.2.1 Process Flow of red micro-LEDs 11 2.2.2 Photolithography 15 2.2.3 Wet etching 17 2.2.4 Metal Evaporation 19 Chapter 3 Results and Discussion 21 3.1 TLM Measurement and Contact Resistance 21 3.2 Electrical Characteristics of the Device 25 3.2.1 Current density–Voltage Characteristics 25 3.2.2 Current Density–Light Output Characteristics 33 3.2.3 Low-Temperature Current Density–Light Output Characteristics 41 Chapter 4 Analysis of Simulated Parameters 47 4.1 Fitting Methodology Based on DE Algorithm 47 4.2 Analysis of A Coefficient: Shockley–Read–Hall Nonradiative Recombination 50 4.2.1 At room temperature 50 4.2.2 At different cryogenic temperatures 53 4.3 Analysis of B Coefficient: Radiative Recombination 59 4.3.1 At room temperature 59 4.3.2 At different cryogenic temperatures 61 4.4 Analysis of C Coefficient: Auger Recombination 66 4.4.1 At room temperature 66 4.4.2 At different cryogenic temperatures 68 Chapter 5 Conclusion 73 Reference 76 | - |
| dc.language.iso | en | - |
| dc.subject | 側壁氧化 | zh_TW |
| dc.subject | ABC模型 | zh_TW |
| dc.subject | 紅光微發光二極體 | zh_TW |
| dc.subject | 磷化鋁銦鎵 | zh_TW |
| dc.subject | 低溫 | zh_TW |
| dc.subject | Cryogenic Temperature | en |
| dc.subject | AlGaInP | en |
| dc.subject | Red µLED | en |
| dc.subject | Sidewall Oxidation | en |
| dc.subject | ABC model | en |
| dc.title | 基於ABC模型之AlGaInP紅光µLED在低溫下側壁氧化與復合行為最佳化分析 | zh_TW |
| dc.title | ABC Model-Based Optimization of Sidewall Oxidation and Recombination in AlGaInP Red µLEDs under Cryogenic Conditions | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 113-2 | - |
| dc.description.degree | 碩士 | - |
| dc.contributor.oralexamcommittee | 吳肇欣;林建中;賴韋志 | zh_TW |
| dc.contributor.oralexamcommittee | Chao-Hsin Wu;Chien-Chung Lin;Wei-Chih Lai | en |
| dc.subject.keyword | ABC模型,側壁氧化,低溫,磷化鋁銦鎵,紅光微發光二極體, | zh_TW |
| dc.subject.keyword | ABC model,Sidewall Oxidation,Cryogenic Temperature,AlGaInP,Red µLED, | en |
| dc.relation.page | 78 | - |
| dc.identifier.doi | 10.6342/NTU202503413 | - |
| dc.rights.note | 同意授權(限校園內公開) | - |
| dc.date.accepted | 2025-08-11 | - |
| dc.contributor.author-college | 電機資訊學院 | - |
| dc.contributor.author-dept | 光電工程學研究所 | - |
| dc.date.embargo-lift | 2025-08-22 | - |
| 顯示於系所單位： | 光電工程學研究所 | |
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