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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/98252完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 周苡嘉 | zh_TW |
| dc.contributor.advisor | Yi-Chia Chou | en |
| dc.contributor.author | 葉又誠 | zh_TW |
| dc.contributor.author | Yu-Cheng Yeh | en |
| dc.date.accessioned | 2025-07-31T16:06:53Z | - |
| dc.date.available | 2025-08-01 | - |
| dc.date.copyright | 2025-07-31 | - |
| dc.date.issued | 2025 | - |
| dc.date.submitted | 2025-07-29 | - |
| dc.identifier.citation | [1]Baliga, B.J., Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design, and Applications. 2018: Woodhead Publishing.
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/98252 | - |
| dc.description.abstract | 本研究著重於探討氧電漿（O2 plasma）前處理對於在氟金雲母（F-mica）基板上成長氮化鎵（GaN）磊晶品質提升的影響。實驗使用了固定功率的氧電漿，並設置了四種前處理時間參數，分別是：未處理（pristine）、10分鐘、20分鐘與30分鐘，接著將這四種前處理完的F-mica基板送入氫化物氣相磊晶系統（HVPE），使用相同的參數成長GaN磊晶。研究發現，氧電漿的施打有助於成核與晶體品質的改善。
為了深入探討氧電漿的實際影響，本研究針對未處理與處理完的F-mica基板進行了AFM、XPS等分析，發現氧電漿的施打有助於粗糙度的提升，並影響F-mica表面的原子排列，進而改變後續磊晶的品質。此外，本研究結合了拉曼光譜與PL光譜的資訊，計算出GaN磊晶內的應力大小，更直接地呈現出不同樣品的品質差異，驗證出20分鐘的前處理時間為最適宜的參數。 最後，本研究針對品質最好的樣品進行了信賴度測試，透過週期性的彎曲樣品以及後續的PL光譜量測，實證了GaN磊晶在柔性F-mica基板具有一定的可靠性。這些研究成果證實了直接在新型二維材料上成長GaN磊晶的可行性，並成功開發出一種有效的表面改質方法。 | zh_TW |
| dc.description.abstract | This study investigates the effect of oxygen plasma (O2 plasma) pretreatment on improving the quality of gallium nitride (GaN) epitaxy grown on fluorophlogopite mica (F-mica) substrates. Using fixed-power plasma, four pretreatment durations were applied: pristine (untreated), 10 minutes, 20 minutes, and 30 minutes. The treated substrates were then used to grow GaN layers via hydride vapor phase epitaxy (HVPE) under identical conditions. Results show that plasma treatment enhances nucleation and crystal quality.
Surface analyses using AFM and XPS revealed that oxygen plasma increases surface roughness and alters atomic arrangement, which benefits subsequent epitaxial growth. Raman and photoluminescence (PL) spectroscopy were used to evaluate internal stress in the GaN layers, confirming that 20 minutes of pretreatment yielded the best results. Reliability tests on the optimal sample, including cyclic bending and PL measurements, demonstrated that GaN on flexible F-mica maintains good stability. Overall, the study confirms the feasibility of direct GaN growth on 2D materials and presents an effective surface modification approach. | en |
| dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2025-07-31T16:06:53Z No. of bitstreams: 0 | en |
| dc.description.provenance | Made available in DSpace on 2025-07-31T16:06:53Z (GMT). No. of bitstreams: 0 | en |
| dc.description.tableofcontents | Master’s Thesis Acceptance Certificate i
謝辭 ii 中文摘要 iii Abstract iv 目次 v 圖次 viii 表次 x 第一章 緒論 1 1.1氮化鎵（Gallium Nitride, GaN）材料簡介 1 1.2氟晶雲母（Fluorophlogopite, F-mica）材料簡介 4 1.3準凡德瓦爾磊晶（Quasi-van der Waals Epitaxy）簡介 5 1.4研究動機 7 第二章 實驗儀器介紹與實驗流程 9 2.1氫化物氣相磊晶（Hydride Vapor Phase Epitaxy, HVPE） 9 2.2 X射線繞射分析儀（X-ray Diffraction, XRD） 12 2.3原子力顯微鏡（Atomic Force Microscopy, AFM） 14 2.4 X射線光電子能譜儀（X-ray Photoelectron Spectroscopy, XPS） 16 2.5拉曼光譜儀（Raman Spectroscopy） 17 2.6光致螢光光譜（Photoluminescence, PL） 19 2.7 掃描式電子顯微鏡（Scanning Electron Microscope, SEM） 20 2.8信賴度測試（Reliability Test） 21 2.9實驗流程 22 第三章 實驗結果與討論 25 3.1 GaN磊晶結構與品質之分析 25 3.1.1 XRD 2θ-ω掃描結果與分析 25 3.1.2搖擺曲線（XRC）結果與分析 27 3.1.3小結 28 3.2氧電漿對於F-mica基板的實際影響之分析 29 3.2.1 AFM結果與分析 29 3.2.2 XPS結果與分析 30 3.2.3小結 36 3.3 GaN磊晶之拉曼光譜分析 37 3.3.1聲子模介紹 37 3.3.2殘存應力計算 39 3.3.3小結 41 3.4 GaN磊晶之PL光譜分析 42 3.4.1特徵峰介紹 42 3.4.2近能隙發光（NBE）與黃帶（YL）分析 44 3.4.3殘存應力計算 46 3.4.4小結 47 3.5 信賴度測試與PL光譜分析 48 3.5.1信賴度測試方法 48 3.5.2近能隙發光（NBE）與黃帶（YL）分析 48 3.5.3殘存應力計算 51 3.5.4小結 52 3.6 GaN磊晶極性檢測 53 3.6.1 GaN極性簡介與檢測方法 53 3.6.2 未處理樣品之檢測結果 54 3.6.3 預處理20分鐘樣品之檢測結果 56 3.6.4小結 58 第四章 結論與未來展望 59 第五章 參考文獻 60 | - |
| dc.language.iso | zh_TW | - |
| dc.subject | 氫化物氣相磊晶 | zh_TW |
| dc.subject | 氟金雲母 | zh_TW |
| dc.subject | 表面處理 | zh_TW |
| dc.subject | 準凡德瓦爾磊晶 | zh_TW |
| dc.subject | 氮化鎵 | zh_TW |
| dc.subject | fluorophologophite mica | en |
| dc.subject | surface pretreatment | en |
| dc.subject | quasi-van der Waals epitaxy | en |
| dc.subject | hydride vapor phase epitaxy | en |
| dc.subject | gallium nitride | en |
| dc.title | 透過氧電漿表面預處理提升柔性準凡德瓦爾磊晶品質 | zh_TW |
| dc.title | Quality Improvement of Flexible Quasi-van der Waals Epitaxy through Oxygen Plasma Surface Pretreatment | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 113-2 | - |
| dc.description.degree | 碩士 | - |
| dc.contributor.oralexamcommittee | 林彥甫;陳祺 | zh_TW |
| dc.contributor.oralexamcommittee | Yen-Fu Lin;Chi Chen | en |
| dc.subject.keyword | 氮化鎵,氫化物氣相磊晶,氟金雲母,表面處理,準凡德瓦爾磊晶, | zh_TW |
| dc.subject.keyword | gallium nitride,hydride vapor phase epitaxy,fluorophologophite mica,surface pretreatment,quasi-van der Waals epitaxy, | en |
| dc.relation.page | 66 | - |
| dc.identifier.doi | 10.6342/NTU202502631 | - |
| dc.rights.note | 未授權 | - |
| dc.date.accepted | 2025-07-30 | - |
| dc.contributor.author-college | 工學院 | - |
| dc.contributor.author-dept | 材料科學與工程學系 | - |
| dc.date.embargo-lift | N/A | - |
| 顯示於系所單位： | 材料科學與工程學系 | |
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