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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/96322完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 楊志忠 | zh_TW |
| dc.contributor.advisor | Chih-Chung Yang | en |
| dc.contributor.author | 呂毓豪 | zh_TW |
| dc.contributor.author | Yu-Hao Lu | en |
| dc.date.accessioned | 2024-12-24T16:20:52Z | - |
| dc.date.available | 2024-12-25 | - |
| dc.date.copyright | 2024-12-24 | - |
| dc.date.issued | 2024 | - |
| dc.date.submitted | 2024-12-03 | - |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/96322 | - |
| dc.description.abstract | 本研究是透過在氮化銦鎵/氮化鎵量子井結構上製作銀奈米管，並將膠體量子點的光阻溶液塞入其中，來提升量子井結構向量子點的福斯特共振能量轉移效率。研究顯示這種金屬奈米管設計相較於將量子點置於沒有金屬的氮化鎵奈米洞內，前者的能量轉移效率顯著提升。這樣的結果是因為具金屬側壁的奈米洞中產生了更強的奈米腔體效應，並且表面電漿子耦合也產生關鍵作用。銀奈米管的製作過程包括在量子井模板上製作表面奈米洞，接著沉積指定厚度的銀，然後通過氬離子反應離子蝕刻進行二次濺鍍，最後塞入量子點的光阻溶液。我們比較不同銀沉積厚度及相應不同二次濺鍍時間的樣品，發現銀沉積厚度為30奈米時，可達到最高的福斯特共振能量轉移效率。 | zh_TW |
| dc.description.abstract | By fabricating an Ag nanotube above an InGaN/GaN quantum-well (QW) structure and inserting a photoresist solution of colloidal quantum dot (QD) inside, the efficiency of the Förster resonance energy transfer (FRET) from the QW structure into the QD can be enhanced, when compared with that with QD in a GaN nanohole, i.e., no metal deposition. Such a result is caused by the stronger nanoscale-cavity effect in a nanohole of a metallic sidewall and the surface plasmon coupling with the sidewall metal. The Ag nanotube is implemented through the steps of the surface nanohole fabrication on a QW template, the Ag deposition of a designated thickness, the secondary sputtering via reactive ion etching with Ar ions, and the insertion of the photoresist solution of QD. By comparing the samples of different Ag deposition thicknesses and correspondingly different secondary sputtering durations, it is found that the Ag thickness of 30 nm leads to the highest FRET efficiency. | en |
| dc.description.provenance | Submitted by admin ntu (admin@lib.ntu.edu.tw) on 2024-12-24T16:20:52Z No. of bitstreams: 0 | en |
| dc.description.provenance | Made available in DSpace on 2024-12-24T16:20:52Z (GMT). No. of bitstreams: 0 | en |
| dc.description.tableofcontents | 口試委員審定書 i
中文摘要 ii Abstract iii 目次 iv 圖次 v 表次 ix 第一章 介紹 1 1.1 奈米腔體效應 1 1.2 奈米腔體效應的理論與數值研究 2 1.3 量子點發光、福斯特共振能量轉移與表面電漿子耦合在表面奈米洞陣列中的行為 4 1.4 研究動機 6 1.5 論文架構 7 第二章 樣品結構、製造流程及測量方法 15 2.1 長晶結構與表面奈米洞製作 15 2.2 金屬奈米洞與金屬奈米管的製作 16 2.3 量子點溶液的製備 16 第三章 測量結果 25 3.1 電子顯微鏡研究結果 25 3.2 光學特性分析結果 27 第四章 討論 62 4.1 銀奈米洞結構中的福斯特共振能量轉移 62 4.2 表面電漿子耦合效應 62 第五章 結論 67 參考文獻: 68 | - |
| dc.language.iso | zh_TW | - |
| dc.title | 從一個氮化銦鎵/氮化鎵量子井結構到塞入銀奈米管內膠體量子點的福斯特共振能量轉換行為 | zh_TW |
| dc.title | Behaviors of the Förster Resonance Energy Transfer from an InGaN/GaN Quantum-well Structure into Inserted Colloidal Quantum Dots in an Ag Nanotube | en |
| dc.type | Thesis | - |
| dc.date.schoolyear | 113-1 | - |
| dc.description.degree | 碩士 | - |
| dc.contributor.oralexamcommittee | 黃建璋;林建中;廖哲浩 | zh_TW |
| dc.contributor.oralexamcommittee | Jian-Jang Huang;Chien-Chung Lin;Che-Hao Liao | en |
| dc.subject.keyword | 銀奈米管,氮化銦鎵/氮化鎵量子井,膠體量子點,福斯特共振能量轉移,奈米腔體效應,表面電漿子耦合,二次濺鍍, | zh_TW |
| dc.subject.keyword | Ag nanotube,InGaN/GaN quantum well,colloidal quantum dot,Förster resonance energy transfer,nanoscale-cavity effect,surface plasmon coupling,secondary sputtering, | en |
| dc.relation.page | 71 | - |
| dc.identifier.doi | 10.6342/NTU202404663 | - |
| dc.rights.note | 同意授權(限校園內公開) | - |
| dc.date.accepted | 2024-12-03 | - |
| dc.contributor.author-college | 電機資訊學院 | - |
| dc.contributor.author-dept | 光電工程學研究所 | - |
| 顯示於系所單位： | 光電工程學研究所 | |
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